IRFR2405TRLPBF vs IRFR3806TRPBF 对比

详细并排对比 IRFR2405TRLPBF 出自 Infineon 和 IRFR3806TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF ✓ 量产中

规格对比

参数 IRFR2405TRLPBF IRFR3806TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.52
晶体管类型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET, 7th generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V 60 V
Continuous Drain Current (ID) at Tc 56 A 43 A
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) —
On-Resistance RDS(on) max @ VGS=10V 16 mOhm —
Gate Charge (Qg) typical 70 nC —
Power Dissipation (PD) at Tc 110 W —
Gate-Source Voltage (VGS) max ±20 V +/- 20 V
工作温度范围 -55 C to +175 C (junction) -55 C to +175 C
封装 TO-252AA (DPAK), 3-pin (2 + Tab) —
安装类型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) —
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant Yes (PBF suffix, lead-free)
Packaging Tape & Reel (TR) —
Transistor Polarity — N-Channel
MOSFET Operating Mode — Enhancement
On-State Resistance RDS(on) max — 15.8 mOhm at VGS = 10 V
Total Gate Charge (Qg) — 22 nC
Power Dissipation (Pd) at Tc = 25 C — 71 W
封装 / 外壳 — TO-252AA (DPAK)
Number of Units in IC — 1
Avalanche Rated — Yes (HEXFET family)

数据手册与资源

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