IRFZ44NSTRLPBF vs IRLZ34NPBF Comparación
Comparación detallada lado a lado de IRFZ44NSTRLPBF por Infineon y IRLZ34NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFZ44NSTRLPBF | IRLZ34NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,93 | $0,65 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | 16.7 nC (typical) |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | — |
| Encapsulado | D2PAK (TO-263) | TO-220AB (through-hole, 3 leads + tab) |
| Tipo de montaje | Surface Mount | Through Hole |
| Technology | HEXFET | — |
| Estado RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free (PBF suffix) | Yes | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| Tipo de transistor | — | N-Channel HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Nivel MSL | — | Not applicable (through-hole) |