IRFZ44NSTRLPBF vs IRLZ34NPBF Comparison
Detailed side-by-side comparison of IRFZ44NSTRLPBF by Infineon and IRLZ34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFZ44NSTRLPBF - 55V 49A N-Channel HEXFET MOSFET D2PAK | Infineon
IRFZ44NSTRLPBF β Active
Specification Comparison
| Parameter | IRFZ44NSTRLPBF | IRLZ34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.93 | $0.65 |
| Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC | 49 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | β |
| Total Gate Charge (Qg) | 42 nC | 16.7 nC (typical) |
| Power Dissipation (TC) | 94 W | β |
| Power Dissipation (TA) | 3.8 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | D2PAK (TO-263) | TO-220AB (through-hole, 3 leads + tab) |
| Mounting Type | Surface Mount | Through Hole |
| Technology | HEXFET | β |
| RoHS Status | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free (PBF suffix) | Yes | β |
| Manufacturer | β | Infineon (formerly International Rectifier) |
| Part Number Suffix | β | PBF = Lead-free (Pb-free), Tube packaging |
| Transistor Type | β | N-Channel HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | β | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | β | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | β | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | β | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | β | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | β | 68 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| MSL Level | β | Not applicable (through-hole) |