ISC028N03LF2SATMA1 vs BSC340N08NS3GATMA1 Comparación
Comparación detallada lado a lado de ISC028N03LF2SATMA1 por Infineon y BSC340N08NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC028N03LF2SATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 92 A |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8-5 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | RoHS compliant, lead-free |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Part Number | — | BSC340N08NS3GATMA1 |
| Technology | — | OptiMOS 3 (N-Channel Trench) |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 23 A |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Channel Type | — | Single N-Channel |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |