ISC028N03LF2SATMA1 vs BSC340N08NS3GATMA1 对比

详细并排对比 ISC028N03LF2SATMA1 出自 Infineon 和 BSC340N08NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC028N03LF2SATMA1 ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 ✓ 量产中
Infineon
BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon

BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon

BSC340N08NS3GATMA1 ✓ 量产中

规格对比

参数 ISC028N03LF2SATMA1 BSC340N08NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $0.81
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 30V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 92 A
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.35 V [DATA_NEEDED: VGS(th) typical]
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
工作结温 -55 C to +175 C —
封装 PG-TDSON-8-62 (5x6 mm) with exposed pad PG-TDSON-8-5 (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
RoHS / Lead-Free Yes (RoHS compliant) RoHS compliant, lead-free
MSL 等级 1 (per JEDEC J-STD-020) 1
Part Number — BSC340N08NS3GATMA1
Technology — OptiMOS 3 (N-Channel Trench)
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 23 A
Continuous Drain Current (ID, Ta) — 7 A
On-State Resistance RDS(on) max @ VGS=10V — 34 mOhm
Gate-Source Voltage VGS max — +/- 20 V
Power Dissipation (Tc) — 32 W
Power Dissipation (Ta) — 2.5 W
工作温度范围 — -55C to +150C
Channel Type — Single N-Channel
Total Gate Charge Qg typ — [DATA_NEEDED: Qg typical]
Avalanche Rating — Repetitive avalanche rated

数据手册与资源

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