K9DUGY8S0M-CCK0 vs K9PKGY8S7M-CCK0 Comparación
Comparación detallada lado a lado de K9DUGY8S0M-CCK0 por Samsung Electronics y K9PKGY8S7M-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung
K9DUGY8S0M-CCK0 ✓ Activo
Comparación de especificaciones
| Parámetro | K9DUGY8S0M-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $9,40 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 series NAND Flash (V-NAND) | — |
| Tipo de memoria | NAND Flash (raw, controller-managed) | NAND Flash |
| Cell Technology | V-NAND (vertical charge-trap) | — |
| Density | [DATA_NEEDED: density] | — |
| Interfaz | [DATA_NEEDED: interface type/width] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Tensión de alimentación | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Read Time | [DATA_NEEDED: tR] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Encapsulado | [DATA_NEEDED: package code and pin count] | BGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | unknown | Lead free / RoHS compliant |
| P/E Cycle Endurance | [DATA_NEEDED: endurance] | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |