K9DUGY8S0M-CCK0 vs K9PKGY8S7M-CCK0 对比
详细并排对比 K9DUGY8S0M-CCK0 出自 Samsung Electronics 和 K9PKGY8S7M-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9DUGY8S0M-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $9.40 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 series NAND Flash (V-NAND) | — |
| 存储器类型 | NAND Flash (raw, controller-managed) | NAND Flash |
| Cell Technology | V-NAND (vertical charge-trap) | — |
| Density | [DATA_NEEDED: density] | — |
| 接口 | [DATA_NEEDED: interface type/width] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| 电源电压 | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Read Time | [DATA_NEEDED: tR] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| 封装 | [DATA_NEEDED: package code and pin count] | BGA |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | unknown | Lead free / RoHS compliant |
| P/E Cycle Endurance | [DATA_NEEDED: endurance] | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |