K9DUGY8S0M-CCK0 vs K9PKGY8S7M-CCK0 Сравнение
Подробное сравнение бок о бок K9DUGY8S0M-CCK0 от Samsung Electronics и K9PKGY8S7M-CCK0 от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung
K9DUGY8S0M-CCK0 ✓ Активен
Сравнение характеристик
| Параметр | K9DUGY8S0M-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $9,40 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 series NAND Flash (V-NAND) | — |
| Тип памяти | NAND Flash (raw, controller-managed) | NAND Flash |
| Cell Technology | V-NAND (vertical charge-trap) | — |
| Density | [DATA_NEEDED: density] | — |
| Интерфейс | [DATA_NEEDED: interface type/width] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Напряжение питания | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Read Time | [DATA_NEEDED: tR] | — |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Корпус | [DATA_NEEDED: package code and pin count] | BGA |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | unknown | Lead free / RoHS compliant |
| P/E Cycle Endurance | [DATA_NEEDED: endurance] | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |