K9DUGY8S0M-CCK0 vs K9PKGY8S7M-CCK0 Comparaison

Comparaison détaillée côte à côte de K9DUGY8S0M-CCK0 par Samsung Electronics et K9PKGY8S7M-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Samsung Electronics
K9DUGY8S0M-CCK0 K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 ✓ Actif
Samsung Electronics
K9PKGY8S7M-CCK0 K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 ✓ Actif

Comparaison des spécifications

Paramètre K9DUGY8S0M-CCK0 K9PKGY8S7M-CCK0
Marque Samsung Electronics Samsung Electronics
Catégorie Memory ICs Memory ICs
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $0,00 $9,40
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9 series NAND Flash (V-NAND) —
Type de mémoire NAND Flash (raw, controller-managed) NAND Flash
Cell Technology V-NAND (vertical charge-trap) —
Density [DATA_NEEDED: density] —
Interface [DATA_NEEDED: interface type/width] Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family)
Tension d'alimentation [DATA_NEEDED: VCC range] [DATA_NEEDED: supply voltage]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Page Program Time [DATA_NEEDED: tPROG] —
Block Erase Time [DATA_NEEDED: tBERS] —
Read Time [DATA_NEEDED: tR] —
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Boîtier [DATA_NEEDED: package code and pin count] BGA
Type de montage Surface Mount Surface Mount
Statut RoHS unknown Lead free / RoHS compliant
P/E Cycle Endurance [DATA_NEEDED: endurance] —
Memory Capacity — 128 Gb (16 GB)
Cell Architecture — 3D V-NAND, MLC (2 bits/cell)
V-NAND Layers — 24 layers
Program/Erase Cycles — [DATA_NEEDED: P/E cycle endurance]
Application Domain — Enterprise SSD (e.g., Samsung 845DC Pro)
Access Time (tR) — [DATA_NEEDED: read cycle time]
Data Retention — [DATA_NEEDED: retention specification]

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