K9DUGY8S0M-CCK0 vs K9PKGY8S7M-CCK0 비교
다음의 상세 나란히 비교: K9DUGY8S0M-CCK0 제조: Samsung Electronics 및 K9PKGY8S7M-CCK0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K9DUGY8S0M-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $9.40 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 series NAND Flash (V-NAND) | — |
| 메모리 유형 | NAND Flash (raw, controller-managed) | NAND Flash |
| Cell Technology | V-NAND (vertical charge-trap) | — |
| Density | [DATA_NEEDED: density] | — |
| 인터페이스 | [DATA_NEEDED: interface type/width] | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| 공급 전압 | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Read Time | [DATA_NEEDED: tR] | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| 패키지 | [DATA_NEEDED: package code and pin count] | BGA |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | unknown | Lead free / RoHS compliant |
| P/E Cycle Endurance | [DATA_NEEDED: endurance] | — |
| Memory Capacity | — | 128 Gb (16 GB) |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |