K9HCG08U1M vs K9XXG08UXM Comparación
Comparación detallada lado a lado de K9HCG08U1M por Samsung Electronics y K9XXG08UXM por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
K9HCG08U1M ✓ ActivoComparación de especificaciones
| Parámetro | K9HCG08U1M | K9XXG08UXM |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Memory Technology | MLC NAND Flash | — |
| Total Capacity | 64 Gbit | — |
| Organización de memoria | 8G x 8 | — |
| Ancho del bus de datos | 8 bit | — |
| Tipo de interfaz | Asynchronous NAND (multiplexed address/data/command) | — |
| Tensión de alimentación | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Read Time (tR) | [DATA_NEEDED: read time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Encapsulado | TSOP-48 (PDSO48) | 48-pin TSOP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -40C to +105C (TA) | [DATA_NEEDED: Operating Temperature] |
| Ready/Busy Output | Yes (R/B#) | — |
| Die Technology | Samsung E-die (per datasheet family) | — |
| Full Ordering Code | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 | — |
| Tamaño de memoria | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |
| Estado RoHS | — | [DATA_NEEDED: RoHS Status] |