K9MDG08U5M vs K9PDG08U5M Comparación
Comparación detallada lado a lado de K9MDG08U5M por Samsung Electronics y K9PDG08U5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Fin de vidaComparación de especificaciones
| Parámetro | K9MDG08U5M | K9PDG08U5M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | EEPROM |
| Estado del ciclo de vida | Activo | Fin de vida |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $35,50 | $4,20 |
| Tipo de memoria | MLC Large Block NAND Flash | NAND Flash (SLC) |
| Density | 16 Gbit (2 GB) | 4 Gbit |
| Organización de memoria | 16G x 8 bit | x8 (multiplexed I/O) |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Interfaz | Asynchronous x8 multiplexed address/data | — |
| Encapsulado | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | TSOP1-48 |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Estado RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Tensión de alimentación | — | [DATA_NEEDED: supply voltage range] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |