K9MDG08U5M vs K9PDG08U5M Comparaison
Comparaison détaillée côte à côte de K9MDG08U5M par Samsung Electronics et K9PDG08U5M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Fin de vieComparaison des spécifications
| Paramètre | K9MDG08U5M | K9PDG08U5M |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | EEPROM |
| Statut du cycle de vie | Actif | Fin de vie |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $35,50 | $4,20 |
| Type de mémoire | MLC Large Block NAND Flash | NAND Flash (SLC) |
| Density | 16 Gbit (2 GB) | 4 Gbit |
| Organisation de la mémoire | 16G x 8 bit | x8 (multiplexed I/O) |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Interface | Asynchronous x8 multiplexed address/data | — |
| Boîtier | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | TSOP1-48 |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Statut RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Tension d'alimentation | — | [DATA_NEEDED: supply voltage range] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |