K9MDG08U5M vs K9PDG08U5M Vergleich
Detaillierter Direktvergleich von K9MDG08U5M von Samsung Electronics und K9PDG08U5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ AbgekündigtSpezifikationsvergleich
| Parameter | K9MDG08U5M | K9PDG08U5M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | EEPROM |
| Lebenszyklusstatus | Aktiv | Ende des Lebenszyklus |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $35,50 | $4,20 |
| Speichertyp | MLC Large Block NAND Flash | NAND Flash (SLC) |
| Density | 16 Gbit (2 GB) | 4 Gbit |
| Speicherorganisation | 16G x 8 bit | x8 (multiplexed I/O) |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Schnittstelle | Asynchronous x8 multiplexed address/data | — |
| Gehäuse | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | TSOP1-48 |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS status] |
| Versorgungsspannung | — | [DATA_NEEDED: supply voltage range] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |