K9MDG08U5M vs K9PDG08U5M 对比
详细并排对比 K9MDG08U5M 出自 Samsung Electronics 和 K9PDG08U5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9MDG08U5M | K9PDG08U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $35.50 | $4.20 |
| 存储器类型 | MLC Large Block NAND Flash | NAND Flash (SLC) |
| Density | 16 Gbit (2 GB) | 4 Gbit |
| 存储组织 | 16G x 8 bit | x8 (multiplexed I/O) |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| 接口 | Asynchronous x8 multiplexed address/data | — |
| 封装 | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | TSOP1-48 |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS status] |
| 电源电压 | — | [DATA_NEEDED: supply voltage range] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |