K9PDG08U5M vs K9F6408U0B Comparación

Comparación detallada lado a lado de K9PDG08U5M por Samsung Electronics y K9F6408U0B por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Fin de vida
Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete

Comparación de especificaciones

Parámetro K9PDG08U5M K9F6408U0B
Marca Samsung Electronics Samsung Electronics
Categoría EEPROM Memory ICs
Estado del ciclo de vida Fin de vida Obsolete
Estado del stock In Stock In Stock
Precio unitario (USD) $4,20 $3,20
Tipo de memoria NAND Flash (SLC) NAND Flash
Density 4 Gbit —
Organización de memoria x8 (multiplexed I/O) —
Tensión de alimentación [DATA_NEEDED: supply voltage range] —
Encapsulado TSOP1-48 44-TSOP2
Tipo de montaje Surface Mount Surface Mount
Page Size [DATA_NEEDED: page size] 528 bytes (512 data + 16 spare)
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block organization from datasheet]
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) Yes (R/B open-drain)
Write Protect Pin Yes (/WP) —
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] —
Endurance [DATA_NEEDED: program/erase cycles] —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Memory Organization — 8M x 8 bit (64Mbit)
Operating Voltage (VCC) — 2.7 V to 3.6 V
Access Time / Cycle Time — 50 ns
Program/Erase Endurance — 100K program/erase cycles
Interfaz — 8-bit multiplexed command/address/data I/O
Write Protect — Yes (WP pin)
Operating Temperature (TCB0 grade) — 0C to 70C
Operating Temperature (TIB0 grade) — -40C to 85C
Production Status (per datasheet) — Mass Production (legacy; now obsolete)

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