K9PDG08U5M vs K9F6408U0B 比較
詳細な並列比較: K9PDG08U5M メーカー: Samsung Electronics および K9F6408U0B メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9PDG08U5M | K9F6408U0B |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | EEPROM | Memory ICs |
| ライフサイクル状態 | 製造終了 | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.20 | $3.20 |
| メモリタイプ | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | — |
| メモリ構成 | x8 (multiplexed I/O) | — |
| 電源電圧 | [DATA_NEEDED: supply voltage range] | — |
| パッケージ | TSOP1-48 | 44-TSOP2 |
| 実装タイプ | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | 528 bytes (512 data + 16 spare) |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block organization from datasheet] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | Yes (R/B open-drain) |
| Write Protect Pin | Yes (/WP) | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Organization | — | 8M x 8 bit (64Mbit) |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Access Time / Cycle Time | — | 50 ns |
| Program/Erase Endurance | — | 100K program/erase cycles |
| インターフェース | — | 8-bit multiplexed command/address/data I/O |
| Write Protect | — | Yes (WP pin) |
| Operating Temperature (TCB0 grade) | — | 0C to 70C |
| Operating Temperature (TIB0 grade) | — | -40C to 85C |
| Production Status (per datasheet) | — | Mass Production (legacy; now obsolete) |