K9PDG08U5M vs K9F6408U0B Comparação

Comparação detalhada lado a lado de K9PDG08U5M por Samsung Electronics e K9F6408U0B por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Fim de vida
Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete

Comparação de especificações

Parâmetro K9PDG08U5M K9F6408U0B
Marca Samsung Electronics Samsung Electronics
Categoria EEPROM Memory ICs
Status do ciclo de vida Fim de vida Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $4,20 $3,20
Tipo de memória NAND Flash (SLC) NAND Flash
Density 4 Gbit —
Organização da memória x8 (multiplexed I/O) —
Tensão de alimentação [DATA_NEEDED: supply voltage range] —
Encapsulamento TSOP1-48 44-TSOP2
Tipo de montagem Surface Mount Surface Mount
Page Size [DATA_NEEDED: page size] 528 bytes (512 data + 16 spare)
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block organization from datasheet]
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) Yes (R/B open-drain)
Write Protect Pin Yes (/WP) —
Temperatura de operação [DATA_NEEDED: operating temperature range] —
Endurance [DATA_NEEDED: program/erase cycles] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Memory Organization — 8M x 8 bit (64Mbit)
Operating Voltage (VCC) — 2.7 V to 3.6 V
Access Time / Cycle Time — 50 ns
Program/Erase Endurance — 100K program/erase cycles
Interface — 8-bit multiplexed command/address/data I/O
Write Protect — Yes (WP pin)
Operating Temperature (TCB0 grade) — 0C to 70C
Operating Temperature (TIB0 grade) — -40C to 85C
Production Status (per datasheet) — Mass Production (legacy; now obsolete)

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação