K9PDG08U5M vs K9F6408U0B 对比
详细并排对比 K9PDG08U5M 出自 Samsung Electronics 和 K9F6408U0B 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9PDG08U5M | K9F6408U0B |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | EEPROM | Memory ICs |
| 生命周期状态 | 停产 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.20 | $3.20 |
| 存储器类型 | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | — |
| 存储组织 | x8 (multiplexed I/O) | — |
| 电源电压 | [DATA_NEEDED: supply voltage range] | — |
| 封装 | TSOP1-48 | 44-TSOP2 |
| 安装类型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | 528 bytes (512 data + 16 spare) |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block organization from datasheet] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | Yes (R/B open-drain) |
| Write Protect Pin | Yes (/WP) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Organization | — | 8M x 8 bit (64Mbit) |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Access Time / Cycle Time | — | 50 ns |
| Program/Erase Endurance | — | 100K program/erase cycles |
| 接口 | — | 8-bit multiplexed command/address/data I/O |
| Write Protect | — | Yes (WP pin) |
| Operating Temperature (TCB0 grade) | — | 0C to 70C |
| Operating Temperature (TIB0 grade) | — | -40C to 85C |
| Production Status (per datasheet) | — | Mass Production (legacy; now obsolete) |