K9PDG08U5M vs K9F6408U0B 비교
다음의 상세 나란히 비교: K9PDG08U5M 제조: Samsung Electronics 및 K9F6408U0B 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K9PDG08U5M | K9F6408U0B |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | EEPROM | Memory ICs |
| 수명 주기 상태 | 수명 종료 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $4.20 | $3.20 |
| 메모리 유형 | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | — |
| 메모리 구성 | x8 (multiplexed I/O) | — |
| 공급 전압 | [DATA_NEEDED: supply voltage range] | — |
| 패키지 | TSOP1-48 | 44-TSOP2 |
| 실장 유형 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | 528 bytes (512 data + 16 spare) |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block organization from datasheet] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | Yes (R/B open-drain) |
| Write Protect Pin | Yes (/WP) | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Organization | — | 8M x 8 bit (64Mbit) |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Access Time / Cycle Time | — | 50 ns |
| Program/Erase Endurance | — | 100K program/erase cycles |
| 인터페이스 | — | 8-bit multiplexed command/address/data I/O |
| Write Protect | — | Yes (WP pin) |
| Operating Temperature (TCB0 grade) | — | 0C to 70C |
| Operating Temperature (TIB0 grade) | — | -40C to 85C |
| Production Status (per datasheet) | — | Mass Production (legacy; now obsolete) |