K9PDG08U5M vs K9XXG08UXM Comparación
Comparación detallada lado a lado de K9PDG08U5M por Samsung Electronics y K9XXG08UXM por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Fin de vida
Comparación de especificaciones
| Parámetro | K9PDG08U5M | K9XXG08UXM |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | EEPROM | Memory ICs |
| Estado del ciclo de vida | Fin de vida | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,20 | $0,00 |
| Tipo de memoria | NAND Flash (SLC) | — |
| Density | 4 Gbit | — |
| Organización de memoria | x8 (multiplexed I/O) | — |
| Tensión de alimentación | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| Encapsulado | TSOP1-48 | 48-pin TSOP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Tamaño de memoria | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |