K9PDG08U5M vs K9XXG08UXM 比較
詳細な並列比較: K9PDG08U5M メーカー: Samsung Electronics および K9XXG08UXM メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9PDG08U5M | K9XXG08UXM |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | EEPROM | Memory ICs |
| ライフサイクル状態 | 製造終了 | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.20 | $0.00 |
| メモリタイプ | NAND Flash (SLC) | — |
| Density | 4 Gbit | — |
| メモリ構成 | x8 (multiplexed I/O) | — |
| 電源電圧 | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| パッケージ | TSOP1-48 | 48-pin TSOP |
| 実装タイプ | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| メモリサイズ | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |