K9PDG08U5M vs K9XXG08UXM Vergleich
Detaillierter Direktvergleich von K9PDG08U5M von Samsung Electronics und K9XXG08UXM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Abgekündigt
Spezifikationsvergleich
| Parameter | K9PDG08U5M | K9XXG08UXM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | EEPROM | Memory ICs |
| Lebenszyklusstatus | Ende des Lebenszyklus | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,20 | $0,00 |
| Speichertyp | NAND Flash (SLC) | — |
| Density | 4 Gbit | — |
| Speicherorganisation | x8 (multiplexed I/O) | — |
| Versorgungsspannung | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| Gehäuse | TSOP1-48 | 48-pin TSOP |
| Montageart | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Speichergröße | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |