K9PDG08U5M vs K9XXG08UXM Comparaison
Comparaison détaillée côte à côte de K9PDG08U5M par Samsung Electronics et K9XXG08UXM par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Fin de vie
Comparaison des spécifications
| Paramètre | K9PDG08U5M | K9XXG08UXM |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | EEPROM | Memory ICs |
| Statut du cycle de vie | Fin de vie | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,20 | $0,00 |
| Type de mémoire | NAND Flash (SLC) | — |
| Density | 4 Gbit | — |
| Organisation de la mémoire | x8 (multiplexed I/O) | — |
| Tension d'alimentation | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| Boîtier | TSOP1-48 | 48-pin TSOP |
| Type de montage | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Taille de mémoire | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Cell Type | — | SLC (single-level cell) NAND |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |