M29W320DT70N3E vs M29W320DB70N3E Comparación
Comparación detallada lado a lado de M29W320DT70N3E por Micron Technology y M29W320DB70N3E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W320DT70N3E | M29W320DB70N3E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Flash |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,05 | $1,95 |
| Tipo de memoria | NOR Flash | NOR Flash |
| Tamaño de memoria | 32 Mbit | — |
| Organización de memoria | 4M x8 / 2M x16 | 2M x 16 |
| Interfaz | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Read Current (typical) | 10 mA | — |
| Boot Block Architecture | Top boot (DT suffix) | — |
| Boot Region | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block | — |
| Encapsulado | 48-TSOP I | 48-TSOP I |
| Package Length | 18.4 mm | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 3 (168 Hours) | — |
| Peak Reflow Temperature Time | 30 s | — |
| Packaging | Tray | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Density | — | 32 Mbit (33554 kbits) |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |