M29W320DT70N3E vs M29W320DB70N3E Vergleich
Detaillierter Direktvergleich von M29W320DT70N3E von Micron Technology und M29W320DB70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W320DT70N3E | M29W320DB70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Flash |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $1,95 |
| Speichertyp | NOR Flash | NOR Flash |
| Speichergröße | 32 Mbit | — |
| Speicherorganisation | 4M x8 / 2M x16 | 2M x 16 |
| Schnittstelle | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Read Current (typical) | 10 mA | — |
| Boot Block Architecture | Top boot (DT suffix) | — |
| Boot Region | 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block | — |
| Gehäuse | 48-TSOP I | 48-TSOP I |
| Package Length | 18.4 mm | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 3 (168 Hours) | — |
| Peak Reflow Temperature Time | 30 s | — |
| Packaging | Tray | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Density | — | 32 Mbit (33554 kbits) |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |