MCZ33887EKR2 vs MCZ33887EK Comparación
Comparación detallada lado a lado de MCZ33887EKR2 por NXP Semiconductors y MCZ33887EK por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MCZ33887EKR2 - 5A H-Bridge Driver w/ Load Current Feedback | NXP
MCZ33887EKR2 ✓ ActivoNXP Semiconductors
MCZ33887EK - 5A H-Bridge Motor Driver with Load Current Feedback | NXP
MCZ33887EK ✓ ActivoComparación de especificaciones
| Parámetro | MCZ33887EKR2 | MCZ33887EK |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Motor Drivers | Motor Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,34 | $5,74 |
| Función | H-Bridge motor driver with load current feedback | — |
| Configuración de salida | Full H-Bridge (4 FETs) | — |
| Tensión de alimentación | 5 V to 28 V | 5 V to 28 V |
| Continuous Output Current | 5.0 A | 5 A |
| On-State Resistance (RDS(on) per leg) | 120 mOhm (typical) | — |
| Encapsulado / Carcasa | 54-SSOP (0.295 inch / 7.50 mm width) Exposed Pad | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Load Current Feedback | Yes (analog output proportional to load current) | Yes (analog current sense output) |
| Control Interface | Parallel logic (IN1, IN2 / PWM, Enable) | Parallel logic (IN1, IN2, EN, D1, D2) |
| Charge Pump | Internal (external capacitor only) | — |
| Limitación de corriente | Programmable via external reference resistor | — |
| Fault Protection | Overcurrent, overtemperature, undervoltage [DATA_NEEDED: detailed list] | — |
| Estado RoHS | Compliant [DATA_NEEDED: per latest datasheet revision] | Compliant |
| Nivel de sensibilidad a la humedad (MSL) | [DATA_NEEDED: MSL rating] | — |
| Load Type | DC motor, solenoid, resistive/inductive | — |
| Topología | — | H-Bridge (4 N-channel MOSFETs) |
| Peak Output Current | — | [DATA_NEEDED: peak current] |
| On-State Resistance (HS + LS) | — | 120 mOhm |
| PWM Frequency (max) | — | [DATA_NEEDED: max PWM frequency] |
| Operating Temperature (Junction) | — | -40 C to +150 C |
| Encapsulado | — | 54-HSOP (Heatsink SOIC) with Exposed Pad |
| Thermal Resistance (Theta_JC) | — | 1.0 C/W |
| AEC-Q100 Qualification | — | Qualified |
| Nivel MSL | — | 3 |
| Protection Features | — | Overcurrent, Overtemperature, UVLO, Shoot-Through |