MCZ33887EKR2 vs MCZ33887EK Comparaison
Comparaison détaillée côte à côte de MCZ33887EKR2 par NXP Semiconductors et MCZ33887EK par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MCZ33887EKR2 - 5A H-Bridge Driver w/ Load Current Feedback | NXP
MCZ33887EKR2 ✓ ActifNXP Semiconductors
MCZ33887EK - 5A H-Bridge Motor Driver with Load Current Feedback | NXP
MCZ33887EK ✓ ActifComparaison des spécifications
| Paramètre | MCZ33887EKR2 | MCZ33887EK |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Motor Drivers | Motor Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,34 | $5,74 |
| Fonction | H-Bridge motor driver with load current feedback | — |
| Configuration de sortie | Full H-Bridge (4 FETs) | — |
| Tension d'alimentation | 5 V to 28 V | 5 V to 28 V |
| Continuous Output Current | 5.0 A | 5 A |
| On-State Resistance (RDS(on) per leg) | 120 mOhm (typical) | — |
| Boîtier / Format | 54-SSOP (0.295 inch / 7.50 mm width) Exposed Pad | — |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Load Current Feedback | Yes (analog output proportional to load current) | Yes (analog current sense output) |
| Control Interface | Parallel logic (IN1, IN2 / PWM, Enable) | Parallel logic (IN1, IN2, EN, D1, D2) |
| Charge Pump | Internal (external capacitor only) | — |
| Limitation de courant | Programmable via external reference resistor | — |
| Fault Protection | Overcurrent, overtemperature, undervoltage [DATA_NEEDED: detailed list] | — |
| Statut RoHS | Compliant [DATA_NEEDED: per latest datasheet revision] | Compliant |
| Niveau de sensibilité à l'humidité (MSL) | [DATA_NEEDED: MSL rating] | — |
| Load Type | DC motor, solenoid, resistive/inductive | — |
| Topologie | — | H-Bridge (4 N-channel MOSFETs) |
| Peak Output Current | — | [DATA_NEEDED: peak current] |
| On-State Resistance (HS + LS) | — | 120 mOhm |
| PWM Frequency (max) | — | [DATA_NEEDED: max PWM frequency] |
| Operating Temperature (Junction) | — | -40 C to +150 C |
| Boîtier | — | 54-HSOP (Heatsink SOIC) with Exposed Pad |
| Thermal Resistance (Theta_JC) | — | 1.0 C/W |
| AEC-Q100 Qualification | — | Qualified |
| Niveau MSL | — | 3 |
| Protection Features | — | Overcurrent, Overtemperature, UVLO, Shoot-Through |