MPXV2010GP vs MPX2010DP Comparación
Comparación detallada lado a lado de MPXV2010GP por STMicroelectronics y MPX2010DP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPXV2010GP - 10kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXV2010GP ✓ ActivoComparación de especificaciones
| Parámetro | MPXV2010GP | MPX2010DP |
|---|---|---|
| Marca | STMicroelectronics | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,62 | $8,50 |
| Pressure Type | Vented Gauge | — |
| Operating Pressure Range | 0 kPa to 10 kPa | — |
| Maximum Overload Pressure | 75 kPa | — |
| Supply Voltage (Vex) | 10 V typical (max 16 V) | — |
| Full-Scale Output (Span) at 10 V | 25 mV nominal at 10 kPa | — |
| Zero Pressure Output (Offset) | 0 mV to 1.0 mV | — |
| Pressure Hysteresis | 1.0 kPa (typical) | — |
| Sensitivity | 2.5 mV/kPa nominal at 10 V | — |
| Response Time | 1.0 ms (typical) | 1.0 ms (typical) |
| Tipo de salida | Analog, ratiometric, mV output | Analog voltage, Wheatstone bridge (mV level) |
| Temperatura de funcionamiento | -40 C to +125 C | -40 °C to +125 °C |
| Port Configuration | Single vertical side port, 0.13" (3.17 mm) tube | Dual ports (differential), 0.19 inch / 4.93 mm tubes |
| Encapsulado | 8-SMD, Gull Wing, Side Port (Case 344B-01) | — |
| Tipo de montaje | Surface Mount | — |
| Technology | Silicon piezoresistive MEMS, on-chip temp compensated | Piezoresistive (silicon strain gauge bridge) |
| Estado RoHS | Compliant | Compliant |
| Tipo de sensor | — | Differential Pressure Sensor |
| Pressure Range | — | 0 to 10 kPa (0 to 1.45 PSI) |
| Typical Full-Scale Span | — | 25 mV at 10 V excitation |
| Zero Pressure Offset | — | 0 mV nominally (±1.0 mV max) |
| Tensión de alimentación | — | 10 V DC typical (max 16 V) |
| Linearity | — | ±0.05% (typ) |
| Temperature Compensation | — | 0 °C to +85 °C (on-chip) |
| Maximum Overpressure | — | 75 kPa |
| Burst Pressure | — | 200 kPa |
| Package / Mounting | — | 4-SIP Module (through-hole with axial tubes) |
| Media Compatibility | — | Dry air or non-corrosive gas |