MRF8P26080HSR3 vs MRF8P23160WHSR3 Comparación
Comparación detallada lado a lado de MRF8P26080HSR3 por NXP Semiconductors y MRF8P23160WHSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF8P26080HSR3 | MRF8P23160WHSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | RF Transceivers |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $99,85 | $99,10 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel LDMOS RF Power MOSFET |
| Technology | Gen8 LDMOS (Silicon, Lateral) | HV8 Lateral LDMOS |
| Frequency Range | 2500 MHz to 2700 MHz | 2300 to 2400 MHz |
| Average Output Power (P3dB) | 14 W (W-CDMA, single-carrier) | — |
| Peak Output Power (CW) | 80 W | — |
| Drain-Source Voltage (VDSS max) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | — |
| Test Mode | Typical Doherty Single-Carrier W-CDMA | — |
| Application Class | Class AB or Class C capable | — |
| Modulation Formats | W-CDMA, LTE, OFDM, multi-carrier | — |
| Encapsulado | NI-780S-4 (ceramic, flange-mount, air-cavity) | — |
| Tipo de montaje | Through-hole flange-mount with screw attachment | — |
| Lead Finish | Gold-plated (NiPdAu) | — |
| Lead-Free / RoHS | Compliant | — |
| Rango de temperatura de funcionamiento | -40C to +150C (junction) | [DATA_NEEDED: operating temperature range] |
| Manufacturer | — | NXP USA Inc. (formerly Freescale Semiconductor) |
| Operating Mode | — | Enhancement Mode |
| Test Frequency | — | 2.32 GHz |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 65 V |
| Test Voltage (VDD) | — | 28 V |
| Power Gain | — | 14.1 dB |
| Average Output Power (P1dB / W-CDMA) | — | 30 W |
| Peak Output Power | — | 160 W |
| Quiescent Drain Current (IDQA) | — | 600 mA |
| Package Type | — | NI-780-4 (CASE 465M-01), ceramic flangeless |
| Number of Terminals | — | 4 |
| Estilo de montaje | — | Surface Mount (SMD flat lead) |
| Configuration | — | Single (Doherty-ready) |
| Application | — | Base Station / Macro Cell Power Amplifier |
| Estado RoHS | — | Compliant |
| Nivel de sensibilidad a la humedad (MSL) | — | [DATA_NEEDED: MSL rating] |