MRF8P26080HSR3 vs MRF8P23160WHSR3 Comparação

Comparação detalhada lado a lado de MRF8P26080HSR3 por NXP Semiconductors e MRF8P23160WHSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF8P26080HSR3 MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 ✓ Ativo
NXP Semiconductors
MRF8P23160WHSR3 MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP

MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP

MRF8P23160WHSR3 Obsolete

Comparação de especificações

Parâmetro MRF8P26080HSR3 MRF8P23160WHSR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs RF Transceivers
Status do ciclo de vida Ativo Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $99,85 $99,10
Tipo de transistor N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Technology Gen8 LDMOS (Silicon, Lateral) HV8 Lateral LDMOS
Frequency Range 2500 MHz to 2700 MHz 2300 to 2400 MHz
Average Output Power (P3dB) 14 W (W-CDMA, single-carrier) —
Peak Output Power (CW) 80 W —
Drain-Source Voltage (VDSS max) 65 V —
Operating Drain Voltage (VDD) 28 V nominal —
Test Mode Typical Doherty Single-Carrier W-CDMA —
Application Class Class AB or Class C capable —
Modulation Formats W-CDMA, LTE, OFDM, multi-carrier —
Encapsulamento NI-780S-4 (ceramic, flange-mount, air-cavity) —
Tipo de montagem Through-hole flange-mount with screw attachment —
Lead Finish Gold-plated (NiPdAu) —
Lead-Free / RoHS Compliant —
Faixa de temperatura de operação -40C to +150C (junction) [DATA_NEEDED: operating temperature range]
Manufacturer — NXP USA Inc. (formerly Freescale Semiconductor)
Operating Mode — Enhancement Mode
Test Frequency — 2.32 GHz
V(BR)DSS (Drain-Source Breakdown Voltage) — 65 V
Test Voltage (VDD) — 28 V
Power Gain — 14.1 dB
Average Output Power (P1dB / W-CDMA) — 30 W
Peak Output Power — 160 W
Quiescent Drain Current (IDQA) — 600 mA
Package Type — NI-780-4 (CASE 465M-01), ceramic flangeless
Number of Terminals — 4
Estilo de montagem — Surface Mount (SMD flat lead)
Configuration — Single (Doherty-ready)
Application — Base Station / Macro Cell Power Amplifier
Status RoHS — Compliant
Nível de sensibilidade à umidade (MSL) — [DATA_NEEDED: MSL rating]

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