MRF8P26080HSR3 vs MRF8P23160WHSR3 Vergleich

Detaillierter Direktvergleich von MRF8P26080HSR3 von NXP Semiconductors und MRF8P23160WHSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF8P26080HSR3 MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 ✓ Aktiv
NXP Semiconductors
MRF8P23160WHSR3 MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP

MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP

MRF8P23160WHSR3 Obsolete

Spezifikationsvergleich

Parameter MRF8P26080HSR3 MRF8P23160WHSR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs RF Transceivers
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $99,85 $99,10
Transistortyp N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Technology Gen8 LDMOS (Silicon, Lateral) HV8 Lateral LDMOS
Frequency Range 2500 MHz to 2700 MHz 2300 to 2400 MHz
Average Output Power (P3dB) 14 W (W-CDMA, single-carrier) —
Peak Output Power (CW) 80 W —
Drain-Source Voltage (VDSS max) 65 V —
Operating Drain Voltage (VDD) 28 V nominal —
Test Mode Typical Doherty Single-Carrier W-CDMA —
Application Class Class AB or Class C capable —
Modulation Formats W-CDMA, LTE, OFDM, multi-carrier —
Gehäuse NI-780S-4 (ceramic, flange-mount, air-cavity) —
Montageart Through-hole flange-mount with screw attachment —
Lead Finish Gold-plated (NiPdAu) —
Lead-Free / RoHS Compliant —
Betriebstemperaturbereich -40C to +150C (junction) [DATA_NEEDED: operating temperature range]
Manufacturer — NXP USA Inc. (formerly Freescale Semiconductor)
Operating Mode — Enhancement Mode
Test Frequency — 2.32 GHz
V(BR)DSS (Drain-Source Breakdown Voltage) — 65 V
Test Voltage (VDD) — 28 V
Power Gain — 14.1 dB
Average Output Power (P1dB / W-CDMA) — 30 W
Peak Output Power — 160 W
Quiescent Drain Current (IDQA) — 600 mA
Package Type — NI-780-4 (CASE 465M-01), ceramic flangeless
Number of Terminals — 4
Montagestil — Surface Mount (SMD flat lead)
Configuration — Single (Doherty-ready)
Application — Base Station / Macro Cell Power Amplifier
RoHS-Status — Compliant
Feuchtigkeitsempfindlichkeitsgrad (MSL) — [DATA_NEEDED: MSL rating]

Datenblätter & Ressourcen

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