1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon
N.º de pieza: 1EDN7512GXTMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.65 | $16,50 |
| 100 | $1.42 | $142,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $0.96 | $960,00 |
| 3.000 | $0.82 | $2.460,00 |
1EDN7512GXTMA1 Descripción general
A low-side gate driver is a type of power management IC that switches the gate of a ground-referenced power transistor between logic-level voltage and the source reference, providing the high di/dt charging and discharging currents that logic-level controllers cannot deliver directly. Within the broader power-electronics hierarchy, low-side drivers sit between logic controllers (microcontrollers, gate-driver ICs, isolated controllers) and the power stage (MOSFETs, IGBTs, HEMTs), bridging low-power control signals and high-current switching nodes. Infineon's EiceDRIVER family, to which this part belongs, includes both isolated and non-isolated gate drivers for industrial, automotive, and renewable applications.
Key features of the 1EDN7512GXTMA1 include 4 A source / 8 A sink drive strength with separate output pins, an under-voltage lockout (UVLO) for safe bootstrap operation, and tight 19 ns typical propagation delay that supports multi-hundred-kHz switching frequencies. The -10 V input robustness on logic pins protects the device from gate-ring induced negative transients in hard-switched half-bridges, while the small WSON-6-1 footprint enables placement directly adjacent to the gate of the driven MOSFET to minimize parasitic gate-loop inductance.
The architecture uses a matched CMOS output stage with separate pull-up (source) and pull-down (sink) transistors sized asymmetrically for fast turn-off and clean turn-on. This split-output topology is particularly advantageous for GaN HEMTs, which require very fast negative-edge gate discharge to avoid cross-conduction and require controlled positive-edge charging to limit ringing. The internal logic supports both inverting and non-inverting modes via a single-mode pin.
Typical applications for the 1EDN7512GXTMA1 include low-side driving in synchronous buck and boost converters, half-bridge gate drive for motor-control H-bridges, primary-side driving of telecom DC-DC bricks, and high-frequency GaN-based point-of-load (POL) converters. It is also widely used in solar micro-inverters, server-voltage-regulator (VR) auxiliary stages, and USB-PD adapters where high efficiency demands fast, clean switching edges.
When designing with this driver, place the decoupling VCC capacitor within 2 mm of the VCC and GND pins and route the gate-drive traces over a continuous ground return to control loop inductance. Because this is a non-isolated low-side driver, it cannot drive a high-side switch directly - for full-bridge topologies pair it with a bootstrap-based half-bridge driver or with Infineon's EiceDRIVER isolated portfolio.
This page consolidates distributor pricing, drop-in alternatives, application references, and design notes not found in the manufacturer datasheet.
Alternativas directas para 1EDN7512GXTMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con 1EDN7512GXTMA1 (mismo factor de forma y huella) — difiere en Package, Function, Operating Temperature Range, Mounting Type, Input Logic Compatibility.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
1EDN7116GXTMA1
✅ Sustitución directa✓ En stock
$0.84 / unidad
Ver hoja de datos →1EDN7512G
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
2EDN7534RXTMA1
✅ Sustitución directa✓ En stock
$0.4 / unidad
Ver hoja de datos →2EDN7533RXTMA1
✅ Sustitución directa✓ En stock
$0.55 / unidad
Ver hoja de datos →1EDN7512GXTMA1 Valores máximos y características eléctricas
| Función | Low-side gate driver, single channel |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Número de salidas | 1 |
| Logic Inputs | Inverting and Non-Inverting |
| Propagation Delay (typical) | 19 ns |
| Input Robustness (negative) | -10 V |
| Rango de temperatura de funcionamiento | -40 C to +125 C |
| Encapsulado | PG-WSON-6-1 (6-pin WSON with exposed pad) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de 1EDN7512GXTMA1
| Pin 1 | OUT (Source) — Source current output (4 A peak), connect to gate via gate resistor |
| Pin 2 | GND — Ground reference |
| Pin 3 | IN+ — Non-inverting logic input |
| Pin 4 | IN- — Inverting logic input |
| Pin 5 | VCC — Supply voltage (4.5 V to 20 V typical) |
| Pin 6 | OUT (Sink) — Sink current output (8 A peak), connect to gate via gate resistor |
Aplicaciones típicas
1EDN7512GXTMA1 es adecuado para 6 aplicacións: GaN-Based Synchronous Buck Converter, Half-Bridge Motor Drive (Low-Side), USB-PD Adapter Primary-Side Drive, Telecom DC-DC Brick Converter, Solar Micro-Inverter Low-Side Driver, Server Voltage Regulator (VR) Auxiliary Stage.
GaN-Based Synchronous Buck Converter
The 1EDN7512GXTMA1's 4 A source / 8 A sink drive strength makes it ideal for low-side driving of GaN HEMTs in synchronous buck converters up to 1 MHz. According to Infineon, the -10 V negative input robustness protects the driver's logic pins from gate-ring transients in hard-switched half-bridge nodes. Placed within 2 mm of the low-side GaN gate, its 19 ns propagation delay enables tight dead-time control below 10 ns, improving efficiency by 1-3% over conventional MOSFET-based stages at the same frequency.
Recomendado
Half-Bridge Motor Drive (Low-Side)
In H-bridge and three-phase inverter low-side positions, the 1EDN7512GXTMA1 drives N-channel MOSFETs with 4 A/8 A peak currents and 19 ns delay, supporting PWM frequencies up to 500 kHz. The separate source/sink outputs allow independent gate-resistor tuning, suppressing ringing on the gate-source loop while preserving fast turn-off for cross-conduction protection. Its -40 C to +125 C operating range suits industrial motor-control and battery-powered e-mobility auxiliaries where the WSON-6 footprint eases placement near the power switches.
Recomendado
USB-PD Adapter Primary-Side Drive
The 1EDN7512GXTMA1 serves as a low-side primary MOSFET driver in USB-PD adapters and high-density AC-DC bricks up to 100 W. Its 4 A source current charges MOSFET gates quickly to minimize switching loss, while 8 A sink current discharges the gate before the next cycle. The WSON-6-1 footprint keeps the high-current loop compact, reducing EMI emissions and improving conducted-noise margins to EN 55022 Class B without requiring an additional gate-drive transformer.
Recomendado
Telecom DC-DC Brick Converter
In 48 V-input isolated DC-DC bricks for telecom and datacom, the 1EDN7512GXTMA1 drives the primary-side synchronous rectifiers and low-side MOSFETs with sub-20 ns delay for sub-MHz operation. Its wide VCC tolerance allows 9 V to 15 V operation from intermediate bus rails, simplifying bias design. The 4 A/8 A peak drive supports GaN-based synchronous rectification, where the asymmetric source/sink strengths reduce dead-time losses by 30-50% compared to symmetric drivers, directly improving overall converter efficiency above 96%.
Recomendado
Solar Micro-Inverter Low-Side Driver
The 1EDN7512GXTMA1 provides reliable low-side driving of IGBTs or MOSFETs in 600 V-class solar micro-inverters, where the WSON-6-1 package fits tightly inside the inverter module. Its -10 V negative input robustness is critical for surviving the high dV/dt transients typical of grid-tied solar stages. With 4 A/8 A peak drive and 19 ns delay, the part supports up to 100 kHz PWM operation, allowing smaller magnetics and reducing total inverter BOM cost by 5-10% versus slower discrete driver solutions.
Recomendado
Server Voltage Regulator (VR) Auxiliary Stage
In server multi-phase VRs, the 1EDN7512GXTMA1 is used as an auxiliary low-side driver for the bias and small-signal rails alongside the main phase drivers. Its 4 A source/8 A sink peak drive ensures rapid switching of the small synchronous FETs that supply housekeeping functions. The 19 ns propagation delay keeps phase synchronization tight, and the compact WSON-6-1 footprint allows multiple drivers to be placed side-by-side under the heatsink for high-density VR designs powering CPUs and GPUs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para 1EDN7512GXTMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | 1EDN7116GXTMA1 | 1EDN7512G | 2EDN7534RXTMA1 | UCC27517DBVR | NCP81071ADR2G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Texas Instruments | onsemi |
| Package | PG-WSON-6-1 (WSON-6) | PG-WSON-6-1 - same | PG-WSON-6-1 - same | PG-WSON-6-1 - same | SOT-23-5 - different | DFN-6 - different |
| Channels | 1 | 1 | 1 | 2 | 1 | 1 |
| Peak Source Current | 4 A | 1.5 A | 4 A | 4 A | 4 A | 4 A |
| Peak Sink Current | 8 A | 3 A | 8 A | 8 A | 4 A | 4 A |
| Propagation Delay | 19 ns | 20 ns | 19 ns | 19 ns | 13 ns | 15 ns |
| Negative Input Robustness | -10 V | -5 V | -10 V | -10 V | 0 V (no negative) | -2 V |
| VCC Range (typical) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 18 V | 4.5 V to 20 V |
| GaN Optimized | Yes | Yes (lower drive) | Yes | Yes | MOSFET-optimized | MOSFET + GaN |
| Unit Price (qty 1000) | $0.96 | $0.65 | $0.96 | $1.20 | $0.55 | $0.45 |
Diferenciadores clave
- Asymmetric 4 A source / 8 A sink drive strength (frente a UCC27517DBVR)
- -10 V negative input robustness (frente a UCC27517DBVR)
- Compact WSON-6-1 footprint optimized for GaN (frente a NCP81071ADR2G)
Notas de diseño
Place the 1EDN7512GXTMA1 within 2 mm of the driven transistor's gate pin to minimize gate-loop inductance. Use a 100 nF X7R ceramic bypass capacitor on VCC placed within 2 mm of the VCC and GND pins. The exposed thermal pad must be soldered to a continuous ground copper pour (at least 25 mm^2) to keep junction temperature below the 125 C limit under continuous 4 A sourcing.
Use separate source (4 A) and sink (8 A) gate resistors to independently tune turn-on and turn-off edges. A typical starting point is 2.2 ohm on the source path and 1.0 ohm on the sink path for GaN HEMTs, but verify by oscilloscope measurement at the gate-source node. Add a ferrite bead or small resistor (1-3 ohm) in series with the gate if ringing exceeds 10% of VCC amplitude.
Do not operate VCC below the UVLO threshold or above 20 V - either condition can damage the IC or cause undefined gate-drive behavior. Avoid routing the high-current gate loop over a split ground plane, as the resulting parasitic inductance can cause logic-pin negative transients. For half-bridge topologies, the 1EDN7512GXTMA1 cannot drive the high-side switch directly; pair with an Infineon EiceDRIVER isolated part or a bootstrap-based half-bridge driver.
Información de cumplimiento
RoHS compliant per Infineon product page; not AEC-Q100 qualified - for automotive use choose the Infineon 1EDN7512U (automotive grade) variant.
