1EDN7512GXTMA1 vs 1EDN7116GXTMA1 Comparación
Comparación detallada lado a lado de 1EDN7512GXTMA1 por Infineon y 1EDN7116GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1EDN7512GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,84 |
| Función | Low-side gate driver, single channel | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Peak Source Current | 4 A | 2 A (typ) |
| Peak Sink Current | 8 A | 4 A (typ) |
| Número de salidas | 1 | — |
| Logic Inputs | Inverting and Non-Inverting | — |
| Propagation Delay (typical) | 19 ns | — |
| Rango de tensión de entrada | [DATA_NEEDED: VCC range] | — |
| Input Robustness (negative) | -10 V | — |
| Tiempo de subida | [DATA_NEEDED: typical tr] | — |
| Tiempo de bajada | [DATA_NEEDED: typical tf] | — |
| UVLO | [DATA_NEEDED: UVLO threshold] | Yes (VCC and gate-rail monitored) |
| Rango de temperatura de funcionamiento | -40 C to +125 C | -40 °C to +125 °C |
| Encapsulado | PG-WSON-6-1 (6-pin WSON with exposed pad) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | MSL3 |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |