1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon
MPN: 1EDN7512GXTMA1 ✓ فعال1EDN7512GXTMA1 جائزہ
A low-side gate driver is a type of power management IC that switches the gate of a ground-referenced power transistor between logic-level voltage and the source reference, providing the high di/dt charging and discharging currents that logic-level controllers cannot deliver directly. Within the broader power-electronics hierarchy, low-side drivers sit between logic controllers (microcontrollers, gate-driver ICs, isolated controllers) and the power stage (MOSFETs, IGBTs, HEMTs), bridging low-power control signals and high-current switching nodes. Infineon's EiceDRIVER family, to which this part belongs, includes both isolated and non-isolated gate drivers for industrial, automotive, and renewable applications.
Key features of the 1EDN7512GXTMA1 include 4 A source / 8 A sink drive strength with separate output pins, an under-voltage lockout (UVLO) for safe bootstrap operation, and tight 19 ns typical propagation delay that supports multi-hundred-kHz switching frequencies. The -10 V input robustness on logic pins protects the device from gate-ring induced negative transients in hard-switched half-bridges, while the small WSON-6-1 footprint enables placement directly adjacent to the gate of the driven MOSFET to minimize parasitic gate-loop inductance.
The architecture uses a matched CMOS output stage with separate pull-up (source) and pull-down (sink) transistors sized asymmetrically for fast turn-off and clean turn-on. This split-output topology is particularly advantageous for GaN HEMTs, which require very fast negative-edge gate discharge to avoid cross-conduction and require controlled positive-edge charging to limit ringing. The internal logic supports both inverting and non-inverting modes via a single-mode pin.
Typical applications for the 1EDN7512GXTMA1 include low-side driving in synchronous buck and boost converters, half-bridge gate drive for motor-control H-bridges, primary-side driving of telecom DC-DC bricks, and high-frequency GaN-based point-of-load (POL) converters. It is also widely used in solar micro-inverters, server-voltage-regulator (VR) auxiliary stages, and USB-PD adapters where high efficiency demands fast, clean switching edges.
When designing with this driver, place the decoupling VCC capacitor within 2 mm of the VCC and GND pins and route the gate-drive traces over a continuous ground return to control loop inductance. Because this is a non-isolated low-side driver, it cannot drive a high-side switch directly - for full-bridge topologies pair it with a bootstrap-based half-bridge driver or with Infineon's EiceDRIVER isolated portfolio.
This page consolidates distributor pricing, drop-in alternatives, application references, and design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل 1EDN7512GXTMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں 1EDN7512GXTMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Function, Operating Temperature Range, Mounting Type, Input Logic Compatibility.
1EDN7116GXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →1EDN7512G
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
2EDN7534RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2EDN7533RXTMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →1EDN7512GXTMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| فنکشن | Low-side gate driver, single channel |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| آؤٹ پٹس کی تعداد | 1 |
| Logic Inputs | Inverting and Non-Inverting |
| Propagation Delay (typical) | 19 ns |
| Input Robustness (negative) | -10 V |
| آپریٹنگ درجہ حرارت رینج | -40 C to +125 C |
| پیکیج | PG-WSON-6-1 (6-pin WSON with exposed pad) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
1EDN7512GXTMA1 پن کنفیگریشن
| پن 1 | OUT (Source) — Source current output (4 A peak), connect to gate via gate resistor |
| پن 2 | GND — Ground reference |
| پن 3 | IN+ — Non-inverting logic input |
| پن 4 | IN- — Inverting logic input |
| پن 5 | VCC — Supply voltage (4.5 V to 20 V typical) |
| پن 6 | OUT (Sink) — Sink current output (8 A peak), connect to gate via gate resistor |
عام استعمالات
1EDN7512GXTMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: GaN-Based Synchronous Buck Converter, Half-Bridge Motor Drive (Low-Side), USB-PD Adapter Primary-Side Drive, Telecom DC-DC Brick Converter, Solar Micro-Inverter Low-Side Driver, Server Voltage Regulator (VR) Auxiliary Stage.
GaN-Based Synchronous Buck Converter
The 1EDN7512GXTMA1's 4 A source / 8 A sink drive strength makes it ideal for low-side driving of GaN HEMTs in synchronous buck converters up to 1 MHz. According to Infineon, the -10 V negative input robustness protects the driver's logic pins from gate-ring transients in hard-switched half-bridge nodes. Placed within 2 mm of the low-side GaN gate, its 19 ns propagation delay enables tight dead-time control below 10 ns, improving efficiency by 1-3% over conventional MOSFET-based stages at the same frequency.
تجویز کردہ
Half-Bridge Motor Drive (Low-Side)
In H-bridge and three-phase inverter low-side positions, the 1EDN7512GXTMA1 drives N-channel MOSFETs with 4 A/8 A peak currents and 19 ns delay, supporting PWM frequencies up to 500 kHz. The separate source/sink outputs allow independent gate-resistor tuning, suppressing ringing on the gate-source loop while preserving fast turn-off for cross-conduction protection. Its -40 C to +125 C operating range suits industrial motor-control and battery-powered e-mobility auxiliaries where the WSON-6 footprint eases placement near the power switches.
تجویز کردہ
USB-PD Adapter Primary-Side Drive
The 1EDN7512GXTMA1 serves as a low-side primary MOSFET driver in USB-PD adapters and high-density AC-DC bricks up to 100 W. Its 4 A source current charges MOSFET gates quickly to minimize switching loss, while 8 A sink current discharges the gate before the next cycle. The WSON-6-1 footprint keeps the high-current loop compact, reducing EMI emissions and improving conducted-noise margins to EN 55022 Class B without requiring an additional gate-drive transformer.
تجویز کردہ
Telecom DC-DC Brick Converter
In 48 V-input isolated DC-DC bricks for telecom and datacom, the 1EDN7512GXTMA1 drives the primary-side synchronous rectifiers and low-side MOSFETs with sub-20 ns delay for sub-MHz operation. Its wide VCC tolerance allows 9 V to 15 V operation from intermediate bus rails, simplifying bias design. The 4 A/8 A peak drive supports GaN-based synchronous rectification, where the asymmetric source/sink strengths reduce dead-time losses by 30-50% compared to symmetric drivers, directly improving overall converter efficiency above 96%.
تجویز کردہ
Solar Micro-Inverter Low-Side Driver
The 1EDN7512GXTMA1 provides reliable low-side driving of IGBTs or MOSFETs in 600 V-class solar micro-inverters, where the WSON-6-1 package fits tightly inside the inverter module. Its -10 V negative input robustness is critical for surviving the high dV/dt transients typical of grid-tied solar stages. With 4 A/8 A peak drive and 19 ns delay, the part supports up to 100 kHz PWM operation, allowing smaller magnetics and reducing total inverter BOM cost by 5-10% versus slower discrete driver solutions.
تجویز کردہ
Server Voltage Regulator (VR) Auxiliary Stage
In server multi-phase VRs, the 1EDN7512GXTMA1 is used as an auxiliary low-side driver for the bias and small-signal rails alongside the main phase drivers. Its 4 A source/8 A sink peak drive ensures rapid switching of the small synchronous FETs that supply housekeeping functions. The 19 ns propagation delay keeps phase synchronization tight, and the compact WSON-6-1 footprint allows multiple drivers to be placed side-by-side under the heatsink for high-density VR designs powering CPUs and GPUs.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا 1EDN7512GXTMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | 1EDN7116GXTMA1 | 1EDN7512G | 2EDN7534RXTMA1 | UCC27517DBVR | NCP81071ADR2G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Texas Instruments | onsemi |
| Package | PG-WSON-6-1 (WSON-6) | PG-WSON-6-1 - same | PG-WSON-6-1 - same | PG-WSON-6-1 - same | SOT-23-5 - different | DFN-6 - different |
| Channels | 1 | 1 | 1 | 2 | 1 | 1 |
| Peak Source Current | 4 A | 1.5 A | 4 A | 4 A | 4 A | 4 A |
| Peak Sink Current | 8 A | 3 A | 8 A | 8 A | 4 A | 4 A |
| Propagation Delay | 19 ns | 20 ns | 19 ns | 19 ns | 13 ns | 15 ns |
| Negative Input Robustness | -10 V | -5 V | -10 V | -10 V | 0 V (no negative) | -2 V |
| VCC Range (typical) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 18 V | 4.5 V to 20 V |
| GaN Optimized | Yes | Yes (lower drive) | Yes | Yes | MOSFET-optimized | MOSFET + GaN |
| Unit Price (qty 1000) | $0.96 | $0.65 | $0.96 | $1.20 | $0.55 | $0.45 |
اہم امتیازی خصوصیات
- Asymmetric 4 A source / 8 A sink drive strength (بمقابلہUCC27517DBVR)
- -10 V negative input robustness (بمقابلہUCC27517DBVR)
- Compact WSON-6-1 footprint optimized for GaN (بمقابلہNCP81071ADR2G)
ڈیزائن نوٹس
Place the 1EDN7512GXTMA1 within 2 mm of the driven transistor's gate pin to minimize gate-loop inductance. Use a 100 nF X7R ceramic bypass capacitor on VCC placed within 2 mm of the VCC and GND pins. The exposed thermal pad must be soldered to a continuous ground copper pour (at least 25 mm^2) to keep junction temperature below the 125 C limit under continuous 4 A sourcing.
Use separate source (4 A) and sink (8 A) gate resistors to independently tune turn-on and turn-off edges. A typical starting point is 2.2 ohm on the source path and 1.0 ohm on the sink path for GaN HEMTs, but verify by oscilloscope measurement at the gate-source node. Add a ferrite bead or small resistor (1-3 ohm) in series with the gate if ringing exceeds 10% of VCC amplitude.
Do not operate VCC below the UVLO threshold or above 20 V - either condition can damage the IC or cause undefined gate-drive behavior. Avoid routing the high-current gate loop over a split ground plane, as the resulting parasitic inductance can cause logic-pin negative transients. For half-bridge topologies, the 1EDN7512GXTMA1 cannot drive the high-side switch directly; pair with an Infineon EiceDRIVER isolated part or a bootstrap-based half-bridge driver.
تعمیل کی معلومات
RoHS compliant per Infineon product page; not AEC-Q100 qualified - for automotive use choose the Infineon 1EDN7512U (automotive grade) variant.
