IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
N.º de pieza: IPT015N10N5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $4.85 | $4,85 |
| 10 | $4.36 | $43,60 |
| 100 | $3.88 | $388,00 |
| 500 | $3.49 | $1.745,00 |
| 1.000 | $3.1 | $3.100,00 |
| 3.000 | $2.78 | $8.340,00 |
IPT015N10N5ATMA1 Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate current between the drain and source terminals. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and are the dominant topology for low-voltage, high-current conversion because their majority-carrier channel yields the lowest conduction loss per unit silicon area. Modern power MOSFETs such as OptiMOS™ 5 belong to the broader power management semiconductor hierarchy: discrete MOSFET -> power discrete -> power semiconductor -> semiconductor device. Their key metrics - on-resistance RDS(on), gate charge Qg, output capacitance COSS, and Figure-of-Merit (RDS(on) x Qg) - directly determine the efficiency and thermal envelope of any switched-mode power supply, motor drive, or battery protection circuit.
The IPT015N10N5ATMA1's headline figure-of-merit, combined with its 100V rating, makes it particularly effective in 48V automotive systems, telecom hold-up converters, and high-current synchronous buck or half-bridge stages. The TOLL (PG-HSOF-8-1) package offers an exposed top-side cooling pad compatible with double-sided cooling, allowing thermal resistance to be lowered substantially versus standard SO-8 footprints. The 300A pulsed current capability supports very high transient loads such as inrush, hot-swap, and e-fuse events.
When designing with this part, pay close attention to gate-drive voltage (OptiMOS 5 is fully specified at VGS = 10V), keep the gate-drive loop physically small to suppress ringing, and observe the safe operating area shown in Diagram 2 of the manufacturer datasheet for case temperatures other than the rated Tc. The combination of low RDS(on), low Qg, and the thermally-enhanced HSOF-8 package makes this part an industry-favored synchronous FET for high-density server, telecom, and automotive 48V applications.
Alternativas directas para IPT015N10N5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPT015N10N5ATMA1 (mismo factor de forma y huella) — difiere en Package, RoHS Status, Technology, Configuration, Automotive Qualification.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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BSC040N10NS5ATMA1
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Ver hoja de datos →BSC021N08NS5ATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
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Ver hoja de datos →IPT015N10N5ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Number | IPT015N10N5ATMA1 |
| Technology | OptiMOS™ 5 |
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 100 V |
| Continuous Drain Current (ID, Tc) | 300 A |
| On-Resistance RDS(on) Max | 1.5 mΩ |
| Power Dissipation (PD, Tc) | 375 W |
| Encapsulado | PG-HSOF-8-1 (TOLL) |
| Tipo de montaje | Surface Mount |
| Configuration | Single |
| Temperatura de funcionamiento | -55°C to +175°C |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction |
| Estado RoHS | Compliant |
| Packaging | Tape & Reel |
Configuración de pines de IPT015N10N5ATMA1
| Pin 1 | Source — Source terminal (low-side connection) |
| Pin 2 | Source — Source terminal (low-side connection) |
| Pin 3 | Source — Source terminal (low-side connection) |
| Pin 4 | Gate — Gate terminal (gate-drive input) |
| Pin 5 | Source — Source terminal (low-side connection) |
| Pin 6 | Source — Source terminal (low-side connection) |
| Pin 7 | Source — Source terminal (low-side connection) |
| Pin 8 | Drain — Drain terminal (high-side connection) |
Área de funcionamiento seguro (DC, Tc = 25°C)
Aplicaciones típicas
IPT015N10N5ATMA1 es adecuado para 6 aplicacións: 48V Automotive Synchronous Rectification, Telecom Hold-up and Battery Backup, Server and Data Center Power Supplies, High-current Hot-swap and E-Fuse Controllers, Industrial Motor Drive Half-Bridge, Solar Inverter and Energy Storage.
48V Automotive Synchronous Rectification
The IPT015N10N5ATMA1 is a primary candidate for the synchronous FETs in 48V mild-hybrid DC-DC converters, where its 100V VDS rating safely covers the 48V nominal bus plus inductive transient overshoots. Its 1.5 mΩ maximum RDS(on) at VGS = 10V keeps conduction loss under 2W per device at 40A load, and the PG-HSOF-8-1 (TOLL) top-side thermal pad enables double-sided cooling on the converter PCB. Compared with the prior OptiMOS generation, the 43% RDS(on) and 44% Coss reductions translate into approximately 1-2 percentage points of efficiency gain in a typical 48V/12V buck stage. The 300A pulsed current capability also tolerates inrush and hot-swap events in 48V e-fuse circuits.
Recomendado
Telecom Hold-up and Battery Backup
In 48V telecom hold-up converters and battery backup units, the IPT015N10N5ATMA1 serves as the main switching element and as the synchronous rectifier on the high-current path. The 100V VDS rating accommodates the 48V rail plus transient ringing during hot-swap insertion, while the 300A continuous current rating supports the high inrush demanded by large bulk hold-up capacitors. The OptiMOS 5 trench technology's low gate charge reduces driver losses at high switching frequencies (100 kHz+), allowing smaller magnetics and higher power density. The TOLL package's exposed top-side pad permits direct attachment to a cold plate, a common cooling strategy in outdoor telecom rectifiers.
Recomendado
Server and Data Center Power Supplies
High-current server CRPS and 48V-to-POL intermediate bus converters benefit from the IPT015N10N5ATMA1's combination of low RDS(on), small TOLL footprint, and top-side thermal pad. In a multi-kilowatt server PSU the synchronous rectification stage can be paralleled with two or three of these devices; each one's 1.5 mΩ RDS(on) keeps per-device conduction loss below 15W at 100A, and the package thermal pad connects directly to a heatsink or cold plate. Compared with older D²PAK solutions, the TOLL footprint delivers higher power density and the top-side cooling enables thinner PCB assemblies, which is critical for 1U and OCP server form factors.
Recomendado
High-current Hot-swap and E-Fuse Controllers
Hot-swap and e-fuse circuits in 48V distribution demand a FET that can handle brief but very large inrush currents while dissipating minimal heat in steady state. The IPT015N10N5ATMA1's 300A continuous rating gives enormous headroom for capacitor-charging inrush, while its 1.5 mΩ RDS(on) keeps the steady-state dissipation to a few watts at typical 30-50A operating loads. The OptiMOS 5 trench technology's low output capacitance reduces the energy dissipated during turn-off, improving hot-swap robustness. The TOLL package's top-side cooling pad also simplifies thermal design in densely populated rack power shelves.
Recomendado
Industrial Motor Drive Half-Bridge
Industrial motor drives operating from 24V or 48V DC bus rails commonly use the IPT015N10N5ATMA1 as the low-side and high-side FETs in a half-bridge leg. The 100V VDS rating supports 48V rails with comfortable transient margin, while the low RDS(on) keeps conduction loss low in continuous PWM operation at 20-50 kHz. The TOLL package's top-side thermal pad allows direct attachment to the motor-drive chassis, which often doubles as a heatsink. The combination of 300A continuous current and 375W power dissipation enables motor drives in the 5-15 kW range when appropriately paralleled and cooled.
Recomendado
Solar Inverter and Energy Storage
Solar micro-inverters and residential energy storage systems with 48V battery buses use the IPT015N10N5ATMA1 in the high-current bidirectional DC-DC stage between the battery and the DC bus. Its 100V VDS rating supports the full battery voltage range including transient spikes, while its 1.5 mΩ RDS(on) maximizes round-trip efficiency of the storage system - critical where every watt of loss translates directly into reduced battery autonomy. The TOLL package's top-side cooling pad enables compact designs where the inverter must fit into a small junction box. The OptiMOS 5 technology's low gate charge also reduces switching loss at the high frequencies needed to keep magnetics small and costs down.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPT015N10N5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPT015N10N5 | BSC040N10NS5ATMA1 | IPG20N10S436AATMA1 | BSC0504NSIATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) |
| VDS Max (V) | 100 | 100 | 100 | 100 | 60 | 80 |
| RDS(on) Max (mΩ) at VGS=10V | 1.5 | 1.5 | 4.0 | 2.0 | 5.0 | 2.1 |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
Diferenciadores clave
- Lowest RDS(on) in Infineon's OptiMOS 5 100V TOLL family (frente a BSC040N10NS5ATMA1)
- 100V VDS rating optimized for 48V systems with full transient margin (frente a BSC0504NSIATMA1)
- Industry-standard TOLL pinout with double-sided cooling (frente a BSC021N08NS5ATMA1)
Notas de diseño
Estimated: At 100A continuous drain current the IPT015N10N5ATMA1 dissipates approximately 15W (P = I² × RDS(on) = 100² × 0.0015). The PG-HSOF-8-1 (TOLL) package thermal resistance must be referenced against the manufacturer datasheet's Diagram 2 for the actual case temperature in your system. For double-sided cooling, attach the exposed top pad to a copper or aluminum heat spreader using thermal interface material rated for at least 3 W/mK; without top-side cooling, derate continuous current to roughly one-third of the datasheet's 300A rating to stay within the 175°C maximum junction temperature.
Keep the high-current drain loop (drain → load → source return → source pin) as small and symmetrical as possible, and place the gate-drive loop (gate-driver output → gate resistor → gate pin → source sense return) physically inside the power loop to minimize gate-loop inductance. According to Infineon's OptiMOS 5 application notes, excessive gate-loop inductance causes VGS ringing and can exceed the ±20V VGS absolute maximum. A 10Ω gate resistor dampens the ringing without significantly slowing switching; use a TVS diode from gate to source if ringing exceeds 16V in bench characterization.
Three pitfalls are common when migrating to TOLL packages from D²PAK or SO-8. First, the top thermal pad must be soldered (or thermally connected with TIM) - a missing top-side connection raises thermal resistance by roughly 2x. Second, the source-sense connection: this part uses pins 1-3 and 5-7 as source, so the gate-driver ground must tie back to one of these pins near the gate pin to avoid source-induced gate-drive errors. Third, do not assume the 100V VDS rating is sufficient margin - in switching converters the drain can ring to 1.5-2x the bus voltage during turn-off; always measure with a scope and add a snubber or TVS if overshoot exceeds 80V in continuous operation.
Información de cumplimiento
RoHS and lead-free compliance inferred from Infineon product page and distributor listings. AEC-Q100 qualification status not explicitly stated in provided web data - confirm with Infineon datasheet or factory for automotive qualification. REACH and conflict-minerals compliance are typical for major-tier MOSFET vendors.