H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix
N.º de pieza: H5AN8G4NAFR-UHC ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $4.2 | $4,20 |
| 10 | $3.95 | $39,50 |
| 100 | $3.6 | $360,00 |
| 500 | $3.3 | $1.650,00 |
| 1.000 | $3.05 | $3.050,00 |
H5AN8G4NAFR-UHC Descripción general
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a family of volatile memory ICs that transfers data on both rising and falling edges of the clock. Within the memory hierarchy, DDR4 sits above DDR3 in the SDRAM lineage and serves as the main-memory workhorse for servers, workstations, PCs, and embedded controllers requiring large density and high bandwidth.
Key features of this part include the large 8Gb monolithic density from the H5AN8G4NAFR-xxC family, a x4 organization suited to ECC-heavy server DIMMs, and full synchronization of all address and control inputs to a differential clock (CK_t/CK_c) for tightly timed operation. The UHC suffix denotes a SK hynix DDR4 speed-grade bin within the -xxC product family.
Architecturally, the device is a CMOS DDR4 SDRAM with internal bank-group parallelism, on-die termination (ODT) and the DDR4 command/address timing discipline described in the SK hynix datasheet (Rev. 1.2, Jul. 2017). Fully synchronous operation referenced to both clock edges allows high sustained bandwidth per device, which is why x4 DDR4 components are the standard building blocks of registered and load-reduced server memory.
Typical applications include server main memory modules (RDIMM/LRDIMM), high-density workstation and desktop DIMMs, networking and telecom line-card memory, and industrial systems requiring large, bandwidth-rich DRAM pools.
Designers should confirm the exact UHC speed-grade timing parameters, IDD current table, and package ball map from the official SK hynix datasheet before layout, as DDR4 timing closure depends on the controller, topology, and thermal environment.
This page synthesizes datasheet data, same-family drop-in speed-grade alternatives, distributor sourcing links, and practical design notes not consolidated in the manufacturer datasheet.
Alternativas directas para H5AN8G4NAFR-UHC — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con H5AN8G4NAFR-UHC (mismo factor de forma y huella) — difiere en Organization, Package, Density, RoHS Status, Datasheet Revision.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
H5AN8G4NAFR-RDC
✅ Sustitución directa✓ En stock
$2.3 / unidad
Ver hoja de datos →H5AN8G4NAFR-PBC
✅ Sustitución directa✓ En stock
$3.55 / unidad
Ver hoja de datos →H5AN8G6NAFR-UHC
✅ Sustitución directa✓ En stock
$5.7422 / unidad
Ver hoja de datos →H5AN8G4NAFR-UHC Valores máximos y características eléctricas
| Manufacturer | SK hynix (Hynix Semiconductor) |
| Tipo de memoria | DDR4 SDRAM (CMOS) |
| Density | 8 Gbit |
| Organización de memoria | 2G x4 |
| Supply Voltage (VDD) | 1.2 V |
| Speed Grade | UHC |
| Interfaz | Synchronous, dual rising/falling clock edges |
| Clock Input | Differential CK_t / CK_c |
| Encapsulado | 78-ball FBGA |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant (Lead-Free & Halogen-Free) |
| Family Variants | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Datasheet Revision | Rev. 1.2 (Jul. 2017), 45 pages |
Guía de configuración de pines de H5AN8G4NAFR-UHC 78-ball fbga
Configuración de pines para H5AN8G4NAFR-UHC (encapsulado 78-ball fbga). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para H5AN8G4NAFR-UHC.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
H5AN8G4NAFR-UHC es adecuado para 6 aplicacións: Server Main Memory (RDIMM/LRDIMM), High-Density Desktop and Workstation DIMMs, Networking and Telecom Line Cards, Industrial Embedded Computing, Test and Measurement Instrumentation, Automotive and Ruggedized Compute Modules.
Server Main Memory (RDIMM/LRDIMM)
The H5AN8G4NAFR-UHC fits server main-memory applications because SK hynix explicitly targets the 8Gb H5AN8G4NAFR-xxC family at high-density, high-bandwidth main memory. The 2G x4 organization is the preferred topology for registered and load-reduced server modules: x4 devices allow strong single-device data-correction ECC, and eight devices per rank at 8Gb yield an 8 GB rank from a single chip-select. In an RDIMM, the device operates synchronously to the differential CK_t/CK_c clock delivered by the register and clock driver (e.g., via an RCD), with ODT tuning per the controller's ZQ calibration. The performance consideration is power: at 1.2 V VDD, designers must budget rail current from the datasheet IDD tables across ranks and verify thermals at module scale.
Recomendado
High-Density Desktop and Workstation DIMMs
For workstation and desktop UDIMMs where density per module matters, the 8Gb x4 H5AN8G4NAFR-UHC enables 8 GB-per-rank configurations using sixteen x4 devices on a dual-rank module. Because the die is fully synchronous to both clock edges, the module sustains the full DDR4 channel bandwidth when the memory controller timing is closed at the UHC bin. Designers populate the same land pattern with RDC or PBC bins to create tiered product SKUs at different price points without a PCB respin, since all -xxC speed grades share the identical 78-ball FBGA footprint. The key trade-off is ECC topology: consumer UDIMMs rarely exploit x4's ECC advantages, so x8 family members (H5AN8G6NAFR-UHC) may simplify channel population when per-rank device count is the constraint.
Recomendado
Networking and Telecom Line Cards
Switch, router, and baseband line cards use deep packet buffers and flow tables that demand large, high-bandwidth DRAM pools. The H5AN8G4NAFR-UHC provides 8 Gbit per device with deterministic, fully synchronous operation referenced to a differential clock, which simplifies timing closure against FPGA or switch-ASIC DDR4 controllers. Because the x4 organization minimizes the data path per device, line-card designers can spread devices across the board for thermal relief while keeping the command/address bus short. The design consideration is signal integrity at the UHC operating point: fly-by command/address routing, per-byte ODT, and reference-VTT planes must follow the controller vendor's DDR4 layout guide, and derating to the RDC bin is a common fallback when trace lengths exceed the nominal reach.
Recomendado
Industrial Embedded Computing
Industrial controllers, machine-vision systems, and edge gateways increasingly adopt ECC-capable DDR4 main memory for reliability under sustained load. The H5AN8G4NAFR-UHC's x4 organization supports robust single-device-correct ECC schemes implemented in the processor's memory controller, valuable in 24/7 factory environments. At 1.2 V and with SK hynix's CMOS DDR4 process, per-device power is modest, easing conduction-cooled or fanless enclosure designs. The part's RoHS-compliant, lead-free and halogen-free construction suits European industrial compliance programs. Designers should verify the industrial temperature requirement against the datasheet operating range before committing, and many industrial designs derate to the RDC speed bin to maximize timing margin across the full temperature span.
Recomendado
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers capture multi-gigabyte waveform streams that require high-bandwidth DDR4 buffer memory. The 8Gb H5AN8G4NAFR-UHC maximizes buffer depth per device, letting instrument designers reach seconds of capture time with fewer chips and shorter data buses. The x4 interface pairs naturally with FPGA memory controllers that striping data across many narrow devices to build wide, deep FIFO structures. Because acquisition is bursty, the controller can exploit DDR4 bank-group parallelism for sustained write throughput at the UHC data rate. A practical tip: instruments benefit from keeping spare speed margin, so many designs qualify RDC parts in place of UHC when the capture pipeline does not saturate the channel bandwidth.
Recomendado
Automotive and Ruggedized Compute Modules
Advanced driver-assistance domain controllers and ruggedized compute modules use DDR4 DRAM for perception stacks and sensor fusion, and x4 ECC memory improves bit-error resilience in electrically noisy vehicular environments. The H5AN8G4NAFR-UHC provides the density per footprint that keeps module area small, while its 1.2 V operation controls power dissipation in sealed, conduction-cooled enclosures. Designers must confirm the grade's temperature qualification against the datasheet, as automotive programs typically require automotive-qualified SKUs rather than standard bins. The shared -xxC footprint also enables dual-sourcing strategy: populating RDC or PBC bins on the same PCB lets supply-chain teams switch speed grades without layout changes when the faster UHC bin faces allocation.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para H5AN8G4NAFR-UHC — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | H5AN8G4NAFR-RDC | H5AN8G4NAFR-PBC | H5AN8G6NAFR-UHC |
|---|---|---|---|---|
| Brand | SK hynix | SK hynix | SK hynix | SK hynix |
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 2G x4 | 2G x4 | 2G x4 | 1G x8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Grade | UHC (top bin) | RDC (mid bin) | PBC (entry bin) | UHC (top bin) |
| Data Rate Class | 2666 MT/s (per SK hynix speed-code convention) | 2400 MT/s class | 2133 MT/s class | 2666 MT/s class |
| RoHS / Halogen-Free | Lead-Free & Halogen-Free (compliant) | Lead-Free & Halogen-Free | Lead-Free & Halogen-Free | Lead-Free & Halogen-Free |
Diferenciadores clave
- Top speed bin of the -xxC family (frente a H5AN8G4NAFR-RDC)
- x4 organization for ECC-strong topologies (frente a H5AN8G6NAFR-UHC)
- Same-footprint speed-grade scalability (frente a H5AN8G4NAFR-PBC)
Notas de diseño
Size the VDD and VDDQ rails from the IDD specification tables in the SK hynix datasheet (Rev. 1.2, page 31 covers IDD specifications) for your rank count and utilization, not from a single typical number. At 1.2 V, a fully populated dual-rank module can draw multiple amps per rail under write bursts. Provide per-device local decoupling (several 0.1 uF ceramics within 3-5 mm of ball pairs) plus shared bulk capacitance per rank, and follow the controller vendor's guidance for the separate 0.6 V VTT termination rail with ODT enabled.
DDR4 x4 routing at the UHC operating point demands strict length matching: data strobe-to-data skew within tight windows (per the controller's DDR4 layout guide), fly-by command/address topology with per-DIMM calibration, and an unbroken reference plane under all DQ/DQS nets. Keep the 78-ball FBGA escapes short, use via-in-pad or short dogbone fanout, and reserve ZQ calibration resistor placement per datasheet requirements. If trace lengths exceed the nominal reach of the UHC bin, qualify the RDC speed grade on the same footprint as a derating path.
The most frequent integration errors are (1) swapping x4 and x8 family members without checking that the ball maps differ - H5AN8G4NAFR (x4) and H5AN8G6NAFR (x8) share the 78-ball FBGA family but are not blind-swappable, (2) programming SPD/controller timings for the UHC bin while populating a slower PBC/RDC part, causing marginal boot failures, and (3) assuming temperature range - verify the datasheet operating range explicitly for industrial or automotive spans rather than assuming standard SDRAM ranges apply.
Información de cumplimiento
Datasheet title explicitly states Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals declarations not stated in verified data.