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Samsung Electronics

K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial

N.º de pieza: K4A8G085WB-BICR ✓ Activo
En stock Se envía en 1-3 días hábiles
1.2 V (VDD/VDDQ) Vdss 78-ball FBGA Package DDR4-2400 (PC4-19200) Speed DDR4 SDRAM Memory
Desde $4.25 USD / unidad
MOQ: 1 |
Precio actualizado: 2026-08-20
Precios por volumen
Cant. Precio unitario Total
1 $7.2 $7,20
10 $6.55 $65,50
100 $5.8 $580,00
500 $5.1 $2.550,00
1.000 $4.65 $4.650,00
3.000 $4.25 $12.750,00
ℹ️ Todos los precios están en USD

K4A8G085WB-BICR Descripción general

The K4A8G085WB-BICR is an 8-Gigabit DDR4 SDRAM memory device from Samsung Electronics, organized as 1G x 8 bits and supplied in a 78-ball FBGA package. It operates from a 1.2V power supply and is designed for reliable operation in memory-intensive electronic systems. Based on Samsung's 8Gb B-die DDR4 platform, the BICR suffix indicates an industrial-temperature-graded x8 component, while retaining the same package footprint and pinout as the commercial K4A8G085WB-BCRC variant.

An SDRAM (synchronous dynamic random-access memory) is a type of volatile memory that synchronizes data transfers with the system clock. DDR4 SDRAM, the fourth generation of double-data-rate memory, uses a 1.2V supply and transfers data on both edges of the clock, doubling effective bandwidth compared to previous generations. In the memory hierarchy, this device sits at the component level beneath registered DIMM modules and is controlled by a memory controller in a CPU, FPGA, or SoC to form the main system memory or high-bandwidth data buffer.

Key features include 1G x 8 organization, 2400Mbps data rate (DDR4-2400), 8192 refresh cycles per bank, 16 banks, and 78-ball FBGA surface-mount construction. The industrial temperature grade enables use in equipment exposed to a wider temperature range than standard commercial DDR4. The x8 data path provides a good balance between density and signal count, allowing eight devices to be placed on a 64-bit memory bus.

Technical depth: Samsung's B-die is widely documented for good timing margins and overclocking headroom; for DRAM controllers, the address and command timing are defined by the DDR4 JEDEC specification. Refresh management is essential because each of the 8192 rows must be refreshed within the tREFI interval, so the memory controller must handle periodic refresh commands. Signal integrity is strongly dependent on carefully routed DQS/DQ groups and termination, which is why high-speed DDR4 layout is critical.

Typical applications include server and data-center memory modules, industrial single-board computers, networking line cards, video surveillance recorders, and FPGA-based edge-AI acceleration. The industrial grade is particularly suited for outdoor telecom cabinets, factory automation, and transportation infrastructure where ambient temperature can vary outside the commercial range.

Design consideration: always verify the exact temperature grade and timing parameters from the Samsung K4A8G085WB datasheet before production; the BICR suffix is industrial, but the precise speed and temperature columns should be confirmed from the ordering information.

Alternativas directas para K4A8G085WB-BICR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.

Variantes de esta serie

Modelos de la misma serie compatibles directamente con K4A8G085WB-BICR (mismo factor de forma y huella) — difiere en Package, Data Rate, Operating Temperature, Burst Length, Density.

SK hynix
Package: FBGA-96 (13x7.5 mm)
Data Rate: 3200 Mbps
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Samsung Electronics
Package: 78-ball FBGA (PBGA78)
Operating Temperature: 0 C to 85 C
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Samsung Electronics
Operating Temperature: 0°C to 85°C
Burst Length: 8 and 4
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Samsung Electronics
Data Rate: 2400 Mbps (DDR4-2400)
Operating Temperature: 0°C to 85°C
Burst Length: BL8, BL16
Comparar con K4A8G085WB-BICR →
Samsung Electronics
Package: 78-FBGA
Operating Temperature: -40°C to 95°C
Burst Length: 8, 16
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Samsung Electronics
Package: 78FBGA
Data Rate: 2666 Mbps
Operating Temperature: -40°C to +95°C
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Samsung Electronics
Package: 78-FBGA
Data Rate: 3200 Mbps
Operating Temperature: 0°C to +85°C
Comparar con K4A8G085WB-BICR →
Micron Technology
Package: 78-ball FBGA (7.5 x 11 mm)
Data Rate: 3200 MT/s (DDR4-3200)
Operating Temperature: 0C to +95C (CT range; IT: -40C to +95C)
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Micron Technology
Package: 78-FBGA (7.5x11 mm)
Data Rate: 2666 MT/s
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Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:

K4A8G085WB-BCRC

✅ Sustitución directa
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 2400 Mbps · 1.2 V · 0°C to 85°C · 78-ball FBGA · 78

✓ En stock

$6.8 / unidad

Ver hoja de datos →

K4A8G085WB-BIRC

✅ Sustitución directa
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 2400 Mbps · 1.2 V · -40°C to 95°C · 78-FBGA · 78

✓ En stock

$6.5625 / unidad

Ver hoja de datos →

K4A8G085WB-BITD

✅ Sustitución directa ⚠️ Especificaciones sin verificar
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 2666 Mbps · 1.2 V · -40°C to +95°C · 78FBGA · Surface Mount

✓ En stock

$3.8 / unidad

Ver hoja de datos →

K4A8G085WB-BIWE

✅ Sustitución directa ⚠️ Especificaciones sin verificar
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps · 1.2 V · 0°C to +85°C · 78-FBGA · Surface Mount

✓ En stock

$6.5 / unidad

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K4A8G085WB-BICH

✅ Sustitución directa ⚠️ Especificaciones sin verificar
Samsung Electronics
📦 78-ball FBGA
DDR4 SDRAM · 8Gb · 1G x 8 · 1.2V · 2400 Mbps (DDR4-2400) · 78-ball FBGA · 0°C to 85°C · 170mA

✓ En stock

$4.96 / unidad

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MT40A1G8SA-062E

✅ Sustitución directa ⚠️ Especificaciones sin verificar
Micron Technology
📦 78-ball FBGA
DDR4 SDRAM · 8 Gbit · 1G x 8 · 3200 MT/s (DDR4-3200) · 1.6 GHz · CL22 at 3200 MT/s · 19 ns · 1.2 V +/-60 mV

✓ En stock

$6.05 / unidad

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H5AN8G6NDJR-XNC

✅ Sustitución directa ⚠️ Especificaciones sin verificar
SK hynix
📦 78-ball FBGA
DDR4 SDRAM · 8 Gb · 512M x16 · 3200 Mbps · 1.2 V (max 1.26 V) · FBGA-96 (13x7.5 mm) · 96 · 85 °C

✓ En stock

$55.6818 / unidad

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MT40A1G8SA-075:E

✅ Sustitución directa ⚠️ Especificaciones sin verificar
Micron Technology
📦 78-ball FBGA
SDRAM - DDR4 · 8Gbit (1G x 8) · Parallel · 1.33 GHz · 2666 MT/s · 1.2V ±60mV · 2.5V (-125mV, +250mV) · 0°C to +95°C

✓ En stock

$6.3 / unidad

Ver hoja de datos →

K4A8G085WB-BICR Valores máximos y características eléctricas

Tipo de memoria DDR4 SDRAM
Density 8 Gb
Organización de memoria 1G x 8
Velocidad de datos 2400 Mbps
Tensión de alimentación 1.2 V (VDD/VDDQ)
Number of Banks 16
Refresh Cycles 8192
Encapsulado 78-ball FBGA
Recuento de pines 78
Tipo de montaje Surface Mount
Temperature Grade Industrial (I-grade)
Die / Process Samsung 8Gb B-die DDR4
Speed Grade DDR4-2400 (PC4-19200)
Estado RoHS Compliant
Lead-Free Yes
Refresh Management Row refresh, auto-refresh and self-refresh supported

Guía de configuración de pines de K4A8G085WB-BICR 78-ball fbga

Configuración de pines para K4A8G085WB-BICR (encapsulado 78-ball fbga). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.

Diagrama de patillaje del encapsulado 78-ball fbga para K4A8G085WB-BICR

No hay datos detallados de patillaje disponibles para K4A8G085WB-BICR.

Consulte la hoja de datos para ver la configuración completa de patillas.

Aplicaciones típicas

K4A8G085WB-BICR es adecuado para 6 aplicacións: Server and Data-Center DIMM, Industrial Embedded Single-Board Computer, FPGA Accelerator and Edge AI, Network Router and Switch, Video Surveillance DVR, Telecom Baseband Unit.

🖥️

Server and Data-Center DIMM

The K4A8G085WB-BICR is the core DRAM component for unbuffered or registered DIMMs in server, cloud, and data-center platforms. Its 1G x 8 organization lets eight or nine devices form a 64-bit/72-bit rank, while 2400Mbps operation delivers high bandwidth per DIMM rank. The 1.2V supply reduces line-card power consumption. Recommended products include STM32F746BET6 for prototype memory-controller testing and XC7Z020 as an FPGA/SoC with DDR4 controller evaluation support.

🏭

Industrial Embedded Single-Board Computer

Industrial SBCs often operate in equipment enclosures without tight climate control, so the K4A8G085WB-BICR industrial temperature grade is a primary selection reason. The 78-FBGA package and 1.2V operation allow dense placement on mechanically rugged boards, while 2400Mbps data rate supports Ethernet, fieldbus, and HMI processing. A PCB can reuse Samsung B-die layout guidelines, reducing bring-up time. Recommended products include STM32F746BET6 as the memory controller and STM32H747BGT6 for higher-performance dual-core designs.

🧩

FPGA Accelerator and Edge AI

FPGA-based edge-AI accelerators require low-latency, high-bandwidth memory for inference data, and the K4A8G085WB-BICR delivers that through a standard DDR4 interface on Xilinx/AMD and Intel FPGA boards. With a 16-bank architecture and 8192 refresh cycles, the memory controller can schedule refreshes to avoid critical inference reads. At 2400Mbps, one x8 rank provides roughly 2.4GB/s peak bandwidth. The industrial grade supports field-deployed smart cameras and gateways. Recommended products include XC7Z020 and XCKU5P-2FFVB676I.

🌐

Network Router and Switch

Network equipment line cards buffer routing tables, ACLs, and packet descriptors; the K4A8G085WB-BICR's 8Gb capacity and x8 organization pair well with commodity DDR4 buses. The 2400Mbps throughput gives packet processors fast access to memory, while the 78-ball FBGA keeps a small footprint on multilayer boards. Routers deployed in remote telecom cabinets benefit from the industrial temperature grade. Recommended products include MT40A512M16JY-075E as a companion memory and STM32H747BGT6 for control-plane management.

🎥

Video Surveillance DVR

High-resolution video recorders continuously write HD/4K streams, requiring predictable SDRAM bandwidth and power efficiency. The K4A8G085WB-BICR, with 2400Mbps and 1.2V, can buffer multiple video channels from an encoder/decoder SoC. Its 1G x 8 organization permits simple chaining of eight devices to create 64-bit memory arrays. The industrial temperature grade also allows installation in unventilated security cabinets. Recommended products include STM32F746BET6 for HDMI/display control and MT40A512M16LY-075 for frame buffering.

🌐

Telecom Baseband Unit

Telecom baseband units process many parallel data streams under strict ambient temperature limits, so the K4A8G085WB-BICR industrial temperature grade is a significant advantage. The DDR4 interface provides high bandwidth for PHY processing, while the x8 organization enables conservative layout in outdoor radio equipment. The 1.2V supply reduces thermal load in sealed enclosures. Pair with H5AN8G6NDJR-XNC or MT40A1G8SA-062E after timing verification for system-level memory expansion. Recommended products include XCKU5P-2FFVB676I as the baseband accelerator.

Where can I buy K4A8G085WB-BICR online?
K4A8G085WB-BICR can be sourced through XAIPART, LCSC, Octopart-connected distributors, and Samsung franchise suppliers. As of Aug. 20, 2026, LCSC lists the similar K4A8G085WB-BIRC starting at about $6.4758, and the commercial K4A8G085WB-BCRC at about $9.1821. The BICR industrial grade may require a quote to confirm stock and lead time.
What is the price of K4A8G085WB-BICR?
The K4A8G085WB-BICR price is approximately $7.20 for one piece, $6.55 for 10 pieces, and $4.65 for 1000 pieces as of Aug. 20, 2026. These figures are engineering estimates based on LCSC prices for the related Samsung 8Gb x8 B-die parts and should be confirmed with a distributor quotation.
What is the lead time for K4A8G085WB-BICR?
Lead time for industrial-temperature K4A8G085WB-BICR depends on distributor stock and supply conditions. When on short-term inventory, delivery may be 1 to 2 weeks; if it requires a factory order, a lead time of 8 to 12 weeks is common. Requesting a quote from multiple distributors is recommended.
What is the difference between K4A8G085WB-BICR and K4A8G085WB-BCRC?
K4A8G085WB-BICR is the industrial-temperature version of Samsung's 8Gb DDR4 B-die x8 device, while K4A8G085WB-BCRC is the commercial-temperature version with 0 to 85 °C temperature range. Both are 1.2V, 1G x 8, 2400 Mbps, 78-FBGA parts and are package-compatible drop-in alternatives.
When should I choose K4A8G085WB-BICR over K4A8G085WB-BCRC?
Choose K4A8G085WB-BICR when the system will be exposed to industrial temperature environments, such as outdoor telecom cabinets, factory automation, or transportation infrastructure. Choose K4A8G085WB-BCRC for commercial equipment operating in a 0 to 85 °C ambient range where the broader industrial range is not required.
What is the best drop-in replacement for K4A8G085WB-BICR?
The best drop-in replacement is Samsung K4A8G085WB-BCRC if your application can accept commercial temperature. For industrial operation, K4A8G085WB-BIRC, K4A8G085WB-BITD, and K4A8G085WB-BICH are same-package candidates. Cross-brand Micron MT40A1G8SA-062E and SK Hynix H5AN8G6NDJR-XNC are potential 8Gb x8 alternatives, but verify pinout and timing before use.
Where can I download K4A8G085WB datasheet PDF?
The Samsung K4A8G085WB datasheet PDF can be downloaded from Samsung Semiconductor's website or from datasheet aggregators such as Alldatasheet and datasheet4u. The K4A8G085WB datasheet is a 73-page document covering DDR4 SDRAM features, AC/DC timing tables, FBGA package dimensions, and ordering information.
What are the key specifications of K4A8G085WB-BICR engineers should know?
The K4A8G085WB-BICR is an 8Gb DDR4 SDRAM organized as 1G x 8, with a 2400 Mbps data rate, 1.2V supply, 16 banks, 8192 refresh cycles, and 78-ball FBGA package. The BICR suffix is an industrial-temperature-graded version in Samsung's B-die DDR4 family. Engineers must verify exact speed and temperature columns from the current datasheet revision.
Is K4A8G085WB-BICR the same as K4A8G085WB-BIRC?
No, K4A8G085WB-BICR and K4A8G085WB-BIRC have different Samsung suffix codes. Both are 8Gb x8 B-die DDR4 devices in 78-FBGA, but the suffix indicates different temperature or speed combinations; the exact industrial range and speed grade should be verified from the datasheet before substitution.
What are the key specifications of K4A8G085WB-BICR that matter for DDR4 design?
The critical specifications are 8Gb density, 1G x 8 organization, 2400 Mbps data rate, 1.2V supply, 78-ball FBGA package, 16 banks, 8192 refresh cycles, and industrial temperature grading. These values determine bus width, power rail design, routing topology, refresh scheduling, and allowable ambient operating range.
What is the best Micron equivalent for K4A8G085WB-BICR?
The best Micron equivalent is MT40A1G8SA-062E or MT40A1G8SA-075:E, both 8Gb 1G x 8 DDR4 devices in 78-ball FBGA. They are cross-brand drop-in candidates for the Samsung part, but engineers must verify VDD/VDDQ, speed grade, and timing parameters against their DDR4 controller before production.
Where can I find the K4A8G085WB-BICR pinout?
The K4A8G085WB-BICR FBGA-78 pinout is contained in the Samsung K4A8G085WB datasheet. Exact ball assignments for VDD, VSS, DQ, DQS, command/address, and control pins should be read from the 73-page datasheet rather than distributor previews.
What voltage does K4A8G085WB-BICR use?
The K4A8G085WB-BICR operates from a 1.2V VDD and VDDQ supply, consistent with the DDR4 SDRAM standard. According to the Samsung K4A8G085WB DDR4 datasheet, the 1.2V supply is used for both the memory core and I/O interface, reducing power consumption compared to DDR3L.
Can K4A8G085WB-BICR be used in a DDR4-2400 system?
Yes, K4A8G085WB-BICR is aligned with the DDR4-2400 family because Samsung's K4A8G085WB B-die devices are rated for 2400Mbps. The device can be used in a DDR4-2400 system when the memory controller timing and industrial-temperature requirements are satisfied; confirm the specific speed bin in the datasheet.

Datos de referencia de ingeniería para K4A8G085WB-BICR — comparación, orientación de diseño e información de cumplimiento.

Guía de selección

Choose the K4A8G085WB-BICR when your design requires an 8Gb DDR4 x8 component with industrial temperature capability and you want to stay in the Samsung B-die ecosystem. If commercial 0-85C is acceptable, K4A8G085WB-BCRC is the lower-cost, same-package choice. If you need an alternate Samsung suffix for supply-chain flexibility, K4A8G085WB-BIRC or K4A8G085WB-BITD are same-brand candidates but must be checked for exact speed/temperature. Cross-brand MT40A1G8SA-062E and H5AN8G6NDJR-XNC offer potential second-source options, but they require memory controller timing and ball-map verification. For 64-bit or 72-bit DIMM ranks, use eight or nine x8 devices; x4 devices such as K4A8G045WB-BCPB can increase rank flexibility but require more components.

Comparación con alternativas

Parámetro Este producto K4A8G085WB-BCRC K4A8G085WB-BIRC MT40A1G8SA-062E H5AN8G6NDJR-XNC
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology SK Hynix
Package 78-ball FBGA 78-ball FBGA 78-ball FBGA 78-ball FBGA 78-ball FBGA
Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 1G x 8 1G x 8 1G x 8 1G x 8 1G x 8
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Refresh Cycles 8192 8192 8192 8192 8192

Diferenciadores clave

  • Industrial temperature grade in Samsung B-die x8 family (frente a K4A8G085WB-BCRC)
  • xFinity data path in standard 78-FBGA package (frente a K4A8G045WB-BCPB)
  • Samsung B-die ecosystem and controller support (frente a MT40A1G8SA-062E)

Notas de diseño

Place a 0.1 uF ceramic capacitor close to each VDD/VDDQ ball and a 4.7 uF bulk capacitor near the device. DDR4 uses a 1.2V supply for both core and I/O; good high-frequency decoupling on the 1.2V rail is essential to keep the supply impedance low and avoid data corruption. Follow the Samsung K4A8G085WB layout guidelines for the VDD and VSS pin distribution.

Route DQ, DQS, and DM groups as matched-length traces with continuous reference planes. For a 2400Mbps x8 DDR4 interface, each DQS/DQ group should be length-matched within a few millimeters and the impedance should be controlled to 40-50 ohms. Avoid vias stubs on the data lines and include series termination resistors if recommended by the board-level DDR4 simulation.

The industrial temperature grade supports wider ambient ranges, but the device still dissipates power during refresh and read/write bursts. Provide a solid thermal path from the FBGA package to the PCB ground and thermal relief vias, especially in sealed telecom or industrial enclosures. Confirm the actual temperature range from the datasheet suffix table before committing to extreme ambient specifications.

Información de cumplimiento

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Libre de plomo
Yes
Libre de halógenos
Unknown
Minerales en conflicto
Unknown

Samsung memory products are generally lead-free and RoHS-compliant, but exact certificate should be obtained from the manufacturer datasheet or product page.

Datos verificados el: 2026-08-20 — datos verificados y seleccionados por el equipo de ingeniería de componentes de XAIPART

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Componentes & términos relacionados

Samsung Electronics K4A8G085WB-BICR K4A8G085WB-BCRC K4A8G085WB-BIRC K4A8G085WB-BITD MT40A1G8SA-062E H5AN8G6NDJR-XNC DDR4 SDRAM DRAM SDRAM FBGA-78 Ball Grid Array 1G x 8 8Gb density 2400 Mbps 1.2 V 8192 refresh cycles 16 banks Industrial temperature grade Samsung B-die Surface Mount RoHS Memory IC Integrated Circuit
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