IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
N.º de pieza: IPD35N10S3L26ATMA2 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.66 | $16,60 |
| 100 | $1.48 | $148,00 |
| 500 | $1.32 | $660,00 |
| 1.000 | $1.18 | $1.180,00 |
| 2.500 | $1.05 | $2.625,00 |
IPD35N10S3L26ATMA2 Descripción general
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-to-source voltage creates a conducting channel between drain and source, enabling efficient high-current switching in power conversion circuits. Within the broader taxonomy it sits between discrete MOSFETs and the wider power-semiconductor family, which also includes IGBTs, thyristors, and wide-bandgap GaN/SiC FETs. OptiMOS-T is Infineon's trench-technology MOSFET platform optimized for low on-resistance per unit silicon area, giving high current density in compact packages.
Key specifications include 71 W maximum power dissipation (Tc), a gate threshold VGS(th) typically in the 2.1 V to 3.5 V range, an avalanche-rated single-pulse drain current supporting unclamped inductive switching, and 100% Rg-tested production parts for paralleling reliability. The PG-TO252-3-11 DPAK footprint provides a low thermal-resistance path through the exposed tab, simplifying PCB heatsinking via copper pour.
Typical applications include 48 V automotive converters (e.g., mild-hybrid DC-DC and e-fuse blocks), automotive electric power steering and braking drivers, motor-drive H-bridges, solenoid and relay switching, and industrial synchronous-rectification stages up to 100 V rails.
Design considerations include keeping the gate-drive loop tight to minimize ringing, sizing the tab copper pour for the application's continuous Id, and confirming avalanche energy EAS for unclamped turn-off events. Compared with non-automotive MOSFETs in the same DPAK footprint, the IPD35N10S3L26ATMA2 adds AEC-Q101 screening for OEM automotive programs.
This page synthesizes distributor pricing, AEC-Q101 cross-reference guidance, and PCB thermal-design notes that supplement the manufacturer datasheet, enabling a faster sourcing and design-in decision for 48 V and 100 V automotive power stages.
Alternativas directas para IPD35N10S3L26ATMA2 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPD35N10S3L26ATMA2 (mismo factor de forma y huella) — difiere en Package, MSL Level, Part Number, Technology, Product Family.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IPD35N10S3L26ATMA1
✅ Sustitución directa✓ En stock
$0.81 / unidad
Ver hoja de datos →IPD30N10S3L34ATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.38 / unidad
Ver hoja de datos →IPD30N10S3L34ATMA2
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.92 / unidad
Ver hoja de datos →IPD70N10S312ATMA2
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.69 / unidad
Ver hoja de datos →IPD70N10S312ATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.92 / unidad
Ver hoja de datos →IPD35N10S3L26ATMA2 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T |
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | 24 mOhm |
| Power Dissipation (Ptot, Tc) | 71 W |
| Encapsulado | PG-TO252-3-11 (DPAK) |
| Recuento de pines | 3 (Drain, Source, Gate + tab) |
| Tipo de montaje | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Technology | Trench MOSFET (OptiMOS-T) |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de IPD35N10S3L26ATMA2
| Pin 1 | Gate — MOSFET gate; drive to VGS(th)+ for full enhancement |
| Pin 2 | Drain — Drain terminal (connected to exposed tab) |
| Pin 3 | Source — Source terminal; connect to gate-drive return |
| Pin Tab | Drain — Exposed tab is electrically tied to Drain; thermal pad and PCB heatsink |
Área de funcionamiento seguro (DC, Tj=25C initial)
Aplicaciones típicas
IPD35N10S3L26ATMA2 es adecuado para 6 aplicacións: 48V Automotive DC-DC Converter, Automotive E-Fuse and Load Switch, Electric Power Steering (EPS) Driver, Industrial Synchronous Rectification (100 V bus), Solenoid and Relay Driver Modules, Brushed DC Motor H-Bridge.
48V Automotive DC-DC Converter
The IPD35N10S3L26ATMA2 is engineered for 48 V mild-hybrid automotive DC-DC converters stepping 48 V down to 12 V for auxiliary loads. Its 100 V V<sub>DS</sub> rating provides 50 V headroom above the 48 V rail, comfortably absorbing inductive transients and load-dump events. With 24 mOhm maximum R<sub>DS(on)</sub> at VGS = 10 V, conduction loss at typical 15-20 A loads stays well under 10 W per switch, and the 71 W power-dissipation rating at Tc with DPAK tab cooling keeps the junction within the AEC-Q101 thermal envelope. The AEC-Q101 screening further qualifies it for OEM 48 V power-module programs.
Recomendado
Automotive E-Fuse and Load Switch
Solid-state e-fuses in 48 V automotive power distribution replace traditional pyrotechnic fuses with a controllable MOSFET-based switch. The IPD35N10S3L26ATMA2 suits this role because its 100 V V<sub>DS</sub> handles 48 V bus transients, the 35 A continuous Id covers most branch-circuit loads, and the 24 mOhm R<sub>DS(on)</sub> keeps steady-state voltage drop below 1 V at full load. The DPAK exposed tab also dissipates fault-current heating during the milliseconds of short-circuit interruption before the gate driver commands turn-off. AEC-Q101 qualification is mandatory for OEM e-fuse modules.
Recomendado
Electric Power Steering (EPS) Driver
Electric power steering requires a robust, AEC-Q101-qualified MOSFET capable of PWM-switching motor currents up to 30 A continuously at 12 V or 48 V rails. The IPD35N10S3L26ATMA2's 35 A continuous drain current at Tc, low 24 mOhm R<sub>DS(on)</sub>, and DPAK package make it a strong candidate for the H-bridge switches in EPS controllers. Its OptiMOS-T trench technology also reduces switching loss at the typical 20 kHz PWM frequency of EPS drives, lowering inverter heating and improving steering-effort smoothness under transient load.
Recomendado
Industrial Synchronous Rectification (100 V bus)
In industrial 60-100 V bus synchronous-rectifier stages (solar optimizers, battery formation, telecom 48 V), the IPD35N10S3L26ATMA2 functions as the low-side MOSFET replacing Schottky diodes. Its 100 V rating handles bus transients, the 24 mOhm R<sub>DS(on)</sub> reduces conduction loss versus a diode, and the 71 W DPAK thermal envelope supports sustained rectification at 20-30 A. The trench OptiMOS-T technology further delivers low Qg, reducing drive losses at 100-300 kHz switching frequencies typical of modern isolated DC-DC stages.
Recomendado
Solenoid and Relay Driver Modules
Automotive and industrial solenoid/relay driver modules require a MOSFET that can absorb the inductive kickback of a de-energized coil. The IPD35N10S3L26ATMA2's 100 V V<sub>DS</sub> rating, combined with its avalanche-rated single-pulse drain current, makes it suitable for direct switching of 12 V or 24 V solenoids without an external TVS clamp. The 35 A continuous Id handles inrush current of even large contactors, and the DPAK footprint is a drop-in match across solenoid-driver PCB variants used by Tier-1 automotive module suppliers.
Recomendado
Brushed DC Motor H-Bridge
Brushed DC motor H-bridges for throttle, valve, and seat-position actuators use four N-channel MOSFETs of which two are high-side and two low-side. The IPD35N10S3L26ATMA2 fits both positions in 12 V and 24 V brushed-motor systems up to 35 A. Its low 24 mOhm R<sub>DS(on)</sub> reduces I²R loss and keeps the H-bridge thermal budget within the DPAK footprint's dissipation limit, while its AEC-Q101 qualification makes it acceptable for under-hood and chassis-mounted motor modules. The exposed tab also simplifies PCB heatsink integration.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPD35N10S3L26ATMA2 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPD35N10S3L26ATMA1 | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA2 | IPD70N10S312ATMA2 | IPD70N10S312ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (Id at Tc) | 35 A | 35 A | 30 A (-14%) | 30 A (-14%) | 70 A (+100%) | 70 A (+100%) |
| RDS(on) max at VGS=10V | 24 mOhm | 24 mOhm | ~34 mOhm (+42%) | ~34 mOhm (+42%) | ~12 mOhm (-50%) | ~12 mOhm (-50%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology Family | OptiMOS-T (trench) | OptiMOS-T (trench) | OptiMOS-T (trench) | OptiMOS-T (trench) | OptiMOS-T (trench) | OptiMOS-T (trench) |
Diferenciadores clave
- Pin-compatible same-die alternative in TA1 tape orientation (frente a IPD35N10S3L26ATMA1)
- Higher-current upgrade path in identical footprint (frente a IPD70N10S312ATMA2)
- Lower-cost same-footprint option with reduced current (frente a IPD30N10S3L34ATMA1)
Notas de diseño
Estimated: at VIN = 48 V, VOUT = 12 V, ID = 20 A continuous conduction in a synchronous buck low-side switch, the IPD35N10S3L26ATMA2 dissipates approximately I²R × (1-D) = 20² × 0.024 × 0.25 = 2.4 W. The PG-TO252-3-11 DPAK package on a 1-square-inch copper pour on a 1 oz FR-4 board typically achieves ThetaJA around 50 C/W, yielding roughly 120 C junction at 100 C ambient - within the AEC-Q101 thermal envelope but requiring verification against your specific PCB stack-up and airflow. Add thermal vias under the tab to inner copper planes for additional reduction.
Keep the gate-drive loop area as small as possible to minimize parasitic inductance that causes VGS ringing and possible shoot-through. Place the gate-driver IC within 10 mm of the gate pin, route gate and source return on adjacent layers, and use a local 10-100 ohm gate resistor plus an optional TVS or 5.1 V Zener from gate to source to clamp below the +/- 20 V VGS maximum. The exposed tab is internally connected to the drain, so PCB copper under the tab doubles as both thermal relief and drain node.
Do not exceed VGS = +/- 20 V absolute maximum; many gate drivers produce 12-15 V which is acceptable, but a misconfigured bootstrap with a 24 V supply will destroy the gate oxide. Also note that AEC-Q101 does not guarantee operation beyond the datasheet's electrical limits - derate continuous Id to roughly 50-60% of the 35 A Tc-rating at realistic PCB case temperatures near 100 C. Finally, confirm EAS (single-pulse avalanche energy) rating from the datasheet before using this part in an unclamped inductive-switching topology.
Información de cumplimiento
AEC-Q101 automotive qualified (analogous to AEC-Q100 but specific to discrete semiconductors). RoHS compliant and lead-free per Infineon product page; halogen-free status not explicitly confirmed in retrieved web data.
