IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon
MPN: IPD90N06S407ATMA2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
| 3,000 | $0.84 | $2,520.00 |
Drop-in alternatives for IPD90N06S407ATMA2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
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IPD33CN10NGATMA1
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View Datasheet βIPD60R225C7ATMA1
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IPD90N06S407ATMA2 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D at T_C) | 90 A |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | 79 W |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) |
| Automotive Qualification | AEC-Q101 Qualified |
| Avalanche Rating | 100% Avalanche Tested |
IPD90N06S407ATMA2 Pin Configuration
| Pin 1 | Gate β Gate drive input; drive to 10 V for full enhancement to 6.9 mOhm R_DS(on) |
| Pin 2 | Drain β Drain terminal; internally connected to the mounting tab for thermal dissipation |
| Pin 3 | Source β Source terminal; connect 10 kOhm gate-source resistor here to prevent false turn-on |
Safe Operating Area (DC, T_C=25 C)
Typical Applications
IPD90N06S407ATMA2 is suitable for 6 applications: Automotive 12 V/24 V High-Current Load Switch, H-Bridge DC Motor Driver (Half-Bridge Switch), Synchronous-Rectifier Stage in DC-DC Converter, Electronic Power-Steering (EPS) and Braking System, Industrial Solenoid and Relay Driver, Battery Protection and Hot-Swap in 12 V-24 V Systems.
Automotive 12 V/24 V High-Current Load Switch
The IPD90N06S407ATMA2's 90 A continuous drain current and 6.9 mOhm R_DS(on) at V_GS=10 V make it ideal for automotive body-electronic load switches driving headlamps, PTC heaters, and high-current solenoids. With 60 V V_DS it tolerates 24 V load-dump transients (per ISO 7637-2) with adequate margin. The AEC-Q101 qualification and -55 C to +175 C junction-temperature rating let it sit in the engine bay or chassis harness. Placed between battery feed and the load with a 10 V gate drive from a body-control MCU, it dissipates roughly 6.9 mOhm x I_load^2 - for a 30 A headlamp that is only 6.2 W of conduction loss, far below the 79 W thermal budget.
Recommended
H-Bridge DC Motor Driver (Half-Bridge Switch)
As a low-side or high-side switch in a 12 V-24 V brushed-DC H-bridge driving seat-position, window, or wiper motors, the IPD90N06S407ATMA2 handles motor inrush and stall currents up to 90 A with 6.9 mOhm conduction loss. The 56 nC Q_G at V_GS=10 V is compatible with 1 A gate drivers at PWM frequencies up to 20 kHz. Its 100% avalanche-tested ruggedness absorbs the inductive kickback when PWM duty cycle commutates the motor winding. Mounted on the DPAK tab with 1 sq-in copper pour, R_thJA is sufficient for continuous 30 A switching without external heatsinking.
Recommended
Synchronous-Rectifier Stage in DC-DC Converter
In a 12 V-to-3.3 V/5 V buck converter's synchronous-rectifier position, the IPD90N06S407ATMA2's 6.9 mOhm R_DS(on) and 56 nC Q_G minimise both conduction and switching losses. The 60 V V_DS rating handles 12 V-input transients with substantial margin, and AEC-Q101 qualification suits automotive POL converters. Operating at 100-300 kHz with a 1 A gate driver, dead-time body-diode conduction is short. Compared to a Schottky diode at 30 A output, the synchronous-rectifier MOSFET saves 1.2 W of rectification loss while reducing PCB temperature rise.
Recommended
Electronic Power-Steering (EPS) and Braking System
The IPD90N06S407ATMA2's AEC-Q101 qualification and 175 C junction-temperature rating suit safety-critical chassis applications such as EPS motor drives and electronic stability-control (ESC) hydraulic-valve switches. Its 90 A current rating covers peak torque demands of EPS brushless motors, while the 60 V V_DS tolerates 24 V truck/lorry platforms. The 100% avalanche rating absorbs the regenerative braking energy when the motor returns current to the bus. This part is also pin-compatible with other Infineon 60 V DPAK MOSFETs for sourcing flexibility.
Recommended
Industrial Solenoid and Relay Driver
Industrial solenoid valves, hydraulic actuators, and high-inrush relay coils draw 10-50 A inrush that the IPD90N06S407ATMA2 can switch directly with its 90 A pulsed-current capability and 6.9 mOhm R_DS(on). The 60 V V_DS handles 24 V and 48 V industrial bus rails with adequate margin, and the 175 C junction rating supports enclosed industrial cabinets. Drive the gate with 10 V from a PLC or industrial MCU, with a 10 kOhm gate-source resistor to prevent false turn-on from dV/dt on the drain. The DPAK package allows compact PCB layouts in DIN-rail PLC modules.
Recommended
Battery Protection and Hot-Swap in 12 V-24 V Systems
In battery-management and hot-swap-inrush-control circuits for 12 V or 24 V battery packs, the IPD90N06S407ATMA2 serves as the disconnect switch or inrush limiter. Its 60 V V_DS handles the battery voltage plus transient ringing, and the 6.9 mOhm R_DS(on) keeps conduction loss under 5 W even at full 90 A load. AEC-Q101 qualification makes it suitable for e-bike and light-EV battery packs where automotive-grade reliability is expected. Use a low-side N-channel configuration with a charge-pump gate driver for full enhancement.
Recommended
Recommended Products Summary
Engineering reference data for IPD90N06S407ATMA2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD90N06S4-07 | IPD048N06N3GATMA1 | IPD048N06L3GBTMA1 | IPD33CN10NGATMA1 | IPD200N15N3GATMA1 | IPD60R225C7ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| V_DS Max | 60 V | 60 V | 60 V | 60 V | 100 V | 150 V | 600 V |
| Continuous Drain Current | 90 A | 90 A | 50 A | 50 A | 33 A | 50 A | 14 A |
| R_DS(on) at V_GS=10 V | 6.9 mOhm | 6.9 mOhm | 4.8 mOhm | 4.8 mOhm | [DATA_NEEDED] | 20 mOhm | 225 mOhm |
| Gate Threshold V_GS(th) | 4 V at 40 uA | 4 V | 3 V (standard) | 2 V (logic-level) | [DATA_NEEDED] | 3.5 V | 3.5 V |
| Total Gate Charge Q_G at 10 V | 56 nC | 56 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 76 nC | 32 nC |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- Highest current capability in DPAK at 60 V (90 A continuous) (vs IPD048N06N3GATMA1)
- 100% Avalanche-tested ruggedness for unclamped inductive switching (vs IPD200N15N3GATMA1)
- AEC-Q101 automotive qualification with MSL1 to 260 C (vs IPD048N06L3GBTMA1)
Design Notes
Estimated: At 90 A continuous load, the IPD90N06S407ATMA2 dissipates P = I^2 x R_DS(on) = 90^2 x 6.9 mOhm = 56 W when fully enhanced at V_GS=10 V. The DPAK PG-TO252-3-11 tab should be soldered to a copper pour of at least 1 sq-in (645 sq-mm) on the top layer for thermal dissipation; additional inner-layer copper connected via thermal vias further reduces R_thJA. Without adequate copper area, the junction will exceed 175 C and trigger thermal shutdown. In pulsed motor or solenoid applications, calculate the RMS current to estimate average dissipation rather than peak current.
Recommended: Follow IPC-7352 DPAK land-pattern guidelines when designing the PCB footprint - the drain pad must accommodate the tab plus 0.5 mm of solder fillet on each side. Place a 10 kOhm gate-source resistor (R_GS) directly between the gate and source pins on the PCB to prevent floating-gate turn-on during high dV/dt transients. Route the gate trace away from the drain switching node to minimise parasitic Miller coupling, and use a Kelvin source connection when the source-current path is shared with the gate-drive return.
Critical: (1) Driving the gate with only 5 V logic-level signal will leave the MOSFET in partial enhancement, increasing R_DS(on) by 3-5x and causing thermal failure - always drive V_GS to 10 V for full enhancement. (2) The absolute maximum V_GS is +/-20 V; exceeding this destroys the gate oxide. (3) For unclamped inductive switching (relay coils, solenoids), add a freewheeling diode or TVS clamp because the 60 V V_DS rating can be exceeded by L x dI/dt transients. (4) Do not connect the drain tab to the drain trace only - it must be soldered to a copper pour for thermal and electrical performance.
Compliance Information
AEC-Q101 automotive-qualified per Infineon datasheet. MSL1 to 260 C peak reflow. Green-Product (RoHS-compliant) construction. Halogen-free per Infineon product family declarations. Lead-free finish (NiPdAu or matte-tin).
