IPT026N10N5ATMA1 - 100V 2.6mΩ OptiMOS 5 MOSFET TOLL | Infineon
N.º de pieza: IPT026N10N5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.95 | $2,95 |
| 10 | $2.66 | $26,60 |
| 100 | $2.36 | $236,00 |
| 500 | $2.1 | $1.050,00 |
| 1.000 | $1.87 | $1.870,00 |
IPT026N10N5ATMA1 Descripción general
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source bias inverts the surface of a P-region, forming an N-channel that conducts current between drain and source. Modern trench MOSFETs such as OptiMOS 5 push cell density higher than planar generations, which simultaneously reduces on-resistance per unit area and lowers gate charge. In the broader taxonomy, the IPT026N10N5ATMA1 sits inside power MOSFETs > MOSFETs > transistors > discrete semiconductors, occupying the low-voltage high-current corner of that hierarchy.
Key differentiating parameters include the 2.6 mΩ maximum RDS(on) at VGS=10 V, the sub-100 ns turn-on/turn-off transition enabled by low Qg and Qgd figures, and the small TOLL outline which shrinks the footprint by roughly 60 % versus D2PAK while doubling power density. The integrated source-connected tab improves PCB thermal spreading and allows the part to be cooled primarily through the PCB copper rather than an external heatsink at moderate loads.
Architecturally, the OptiMOS 5 platform combines a fine-pitch trench gate with a shielded-cell layout to balance dv/dt ruggedness against body-diode reverse recovery. Compared to older OptiMOS 3/4 generations in the same voltage class, the IPT026N10N5 typically achieves a 30-40 % lower figure of merit (RDS(on) × Qg) which directly translates into cooler operation at high switching frequencies.
Typical applications include synchronous rectification in 48 V server and telecom DC-DC converters, brushless DC motor drives for industrial fans and pumps, hot-swap and OR-ing switches on telecom boards, solar micro-inverters, and Class-D audio output stages where low conduction loss reduces thermal stress on the heatsink.
When designing with this part, ensure that gate-drive voltage reaches at least 10 V for full enhancement, and place the gate resistor close to the gate pin to suppress parasitic ringing. For high di/dt loops, keep the source-return path as short as possible and use a Kelvin-source footprint if available on the PCB pad pattern.
This page synthesizes distributor pricing, pin-compatible alternatives in the same TOLL/HSOF-8-1 footprint, and practical design notes not aggregated in the manufacturer datasheet.
Alternativas directas para IPT026N10N5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPT026N10N5ATMA1 (mismo factor de forma y huella) — difiere en Technology, Package, Configuration, Operating Temperature Range, Mounting Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IPT015N10N5ATMA1
✅ Sustitución directa✓ En stock
$2.78 / unidad
Ver hoja de datos →IPT023N10N5ATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IPT027N10N5ATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC076N04NDATMA1
✅ Sustitución directa✓ En stock
$0.82 / unidad
Ver hoja de datos →IPC100N04S5L1R5ATMA1
✅ Sustitución directa✓ En stock
$1.18 / unidad
Ver hoja de datos →IAUC120N06S5L015ATMA1
✅ Sustitución directa✓ En stock
$0.92 / unidad
Ver hoja de datos →IPT026N10N5ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID, Tc=25°C) | 202 A |
| Continuous Drain Current (ID, Ta) | 27 A |
| Maximum RDS(on) at VGS=10V | 2.6 mΩ |
| Maximum Power Dissipation (Tc=25°C) | 214 W |
| Encapsulado | PG-HSOF-8-1 (TOLL) |
| Tipo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) |
| Configuration | Single with built-in diode |
| Number of Terminals | 8 |
| Technology | Trench (OptiMOS 5) |
| Estado RoHS | Compliant |
Configuración de pines de IPT026N10N5ATMA1
| Pin 1 | Source — Source connection (internally tied to thermal pad) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (top side, exposed pad) |
Área de funcionamiento seguro (TC=25°C)
Aplicaciones típicas
IPT026N10N5ATMA1 es adecuado para 6 aplicacións: 48V Server and Telecom Synchronous Rectification, Brushless DC Motor Drives, Hot-Swap and OR-ing Switches, Solar Micro-Inverter Power Stage, Class-D Audio Output Stage, E-Bike and Light Electric Vehicle Battery Switch.
48V Server and Telecom Synchronous Rectification
The IPT026N10N5ATMA1 fits 48 V server and telecom synchronous rectification because its 100 V VDS rating provides avalanche headroom on 48-60 V bus rails while the 2.6 mΩ RDS(on) keeps conduction loss under 5 W at 50 A output current. Placed as the low-side MOSFET in a half-bridge LLC or hard-switched buck stage, it replaces older D2PAK parts at 60 % smaller footprint. Compared to a 60 V MOSFET the 100 V rating eliminates avalanche stress during output-side transients. The 214 W power dissipation rating supports continuous 100 A operation at Tc=80 °C without external heatsinking beyond PCB copper.
Recomendado
Brushless DC Motor Drives
In 48-72 V BLDC motor drives for industrial fans, pumps, and e-mobility auxiliaries, the IPT026N10N5ATMA1's 202 A continuous current and 2.6 mΩ RDS(on) reduce I²R losses by 30-50 % versus older 100 V parts. The trench OptiMOS 5 technology gives low Qgd (~25 nC typical) which enables 50-100 kHz PWM frequencies for quieter motor operation and reduced current ripple. Used in the three-phase inverter leg with a gate driver like the IR2110SPBF or 2EDL8034G4CXTMA1, the part handles regenerative-braking avalanche energy within its SOA. The TOLL footprint simplifies compact motor-controller PCB layouts.
Recomendado
Hot-Swap and OR-ing Switches
The IPT026N10N5ATMA1 is well suited to telecom-board hot-swap and OR-ing switches on 48 V distribution rails because its 100 V VDS tolerates plug-in transient spikes up to 80 V while the 2.6 mΩ RDS(on) minimizes steady-state voltage drop. In OR-ing topologies the MOSFET replaces a Schottky diode, cutting power loss by 40-60 % and eliminating the heatsink. The part's SOA supports the brief inrush current when a board card is inserted into a live backplane. Built-in source-connected tab enables direct PCB cooling without external thermal management.
Recomendado
Solar Micro-Inverter Power Stage
In solar micro-inverters operating from 40-60 V PV strings, the IPT026N10N5ATMA1 acts as the primary switching element at 100 kHz+ frequencies with its 2.6 mΩ RDS(on) and low Qg achieving >98 % conversion efficiency. The 100 V rating covers the maximum power-point voltage of typical residential PV strings with ample derating margin. Compared to planar MOSFETs of similar rating, OptiMOS 5's lower figure-of-merit cuts switching losses by 25-35 % at high frequency, allowing smaller magnetics. The TOLL package footprint reduces inverter box volume by 30-40 % versus conventional TO-247 designs.
Recomendado
Class-D Audio Output Stage
The IPT026N10N5ATMA1 fits Class-D audio output stages up to 500 W per channel because its 2.6 mΩ RDS(on) reduces output-filter losses and its trench technology yields low distortion under high di/dt switching. The 100 V rating supports ±50 V supply rails typical of pro-audio amplifiers, while 202 A peak current handles low-impedance 4-ohm loads. The TOLL package enables compact amplifier modules by replacing larger TO-264 or D2PAK parts at one-quarter the PCB area. Source-connected tab provides thermal spreading without dedicated heatsinking at moderate continuous output.
Recomendado
E-Bike and Light Electric Vehicle Battery Switch
In 48 V e-bike and light-EV battery management, the IPT026N10N5ATMA1 serves as the main discharge and pre-charge MOSFET handling up to 200 A peak with 2.6 mΩ RDS(on). The 100 V rating tolerates regen-braking spikes on the bus, while the TOLL package enables compact battery-pack BMS layouts. Compared to a TO-220 part, the surface-mount TOLL cuts assembly cost and improves vibration tolerance. Source-connected thermal tab couples directly to the BMS PCB copper, removing the heatsink from the BOM in most designs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPT026N10N5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPT015N10N5ATMA1 | IPT023N10N5ATMA1 | IPT027N10N5ATMA1 | BSC076N04NDATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) |
| VDS Max | 100 V | 100 V | 100 V | 100 V | 40 V | 40 V |
| RDS(on) Max @10V | 2.6 mΩ | 1.5 mΩ | 2.3 mΩ | 2.7 mΩ | 0.76 mΩ | 1.5 mΩ |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) | OptiMOS 5 (Trench) |
| VGS Max | ±20 V | ±20 V | ±20 V | ±20 V | ±20 V | ±20 V |
Diferenciadores clave
- Lower RDS(on) at same voltage than legacy 100V MOSFETs (frente a Generic 100V D2PAK MOSFETs (~5 mΩ))
- 60% smaller PCB footprint than D2PAK (frente a D2PAK (TO-263) MOSFETs)
- OptiMOS 5 platform with optimized FOM (frente a Older OptiMOS 3 / OptiMOS 4 generations)
Notas de diseño
At continuous 100 A load with RDS(on)=2.6 mΩ, conduction loss is approximately 26 W; this must be sunk through PCB copper to the TOLL source-connected thermal pad. Infineon's application note recommends a minimum 25x25 mm 2 oz copper pad on each source pin to keep junction temperature below 125 °C at TA=70 °C. Without adequate copper the junction will exceed thermal ratings within seconds at full load. Forced-air cooling or an attached heatsink may be required for continuous 150 A+ operation in enclosed boxes.
Place the gate-drive resistor (typically 10-33 Ω) within 5 mm of pin 4 to dampen parasitic gate-source ringing. Use a Kelvin-source connection if the layout allows: a separate trace from source-sensing to the gate-driver ground eliminates the source-inductance voltage drop from the gate-drive loop. For high di/dt switching at 100 kHz+, keep the high-current drain-source loop area below 100 mm² to limit parasitic inductance and the resulting VDS overshoot during turn-off.
Do not operate the IPT026N10N5ATMA1 above VGS=±20 V - the gate oxide will rupture. Use a 12 V or 10 V gate-drive supply with adequate decoupling. Avoid plugging the part into a live circuit without soft-start; the body-diode reverse recovery can produce severe dV/dt ringing. For OR-ing and hot-swap applications, gate-them-off with a controlled ramp to limit inrush. Lastly, never exceed TJ=175 °C even briefly - the OptiMOS 5 silicon will thermally run away above this limit.
The TOLL package's eight source pins must all be soldered to maximize current-carrying capacity and thermal spreading; leaving pins unsoldered creates localized hotspots that degrade long-term reliability. Use a reflow profile compatible with MSL1 or MSL2 moisture sensitivity - the TOLL package is rated MSL2 per JEDEC J-STD-020. Avoid manual soldering on this package because the thermal pad makes hand-rework unreliable; use a hot plate or dedicated rework station.
Información de cumplimiento
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified; for automotive use consider the automotive-grade OptiMOS 5 variants in same TOLL package.