K3KL8L80DM-MGCU - 8Gb LPDDR5X DRAM 1Gx32 | Samsung
N.º de pieza: K3KL8L80DM-MGCU ✓ Activo| Cant. | Precio unitario | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K3KL8L80DM-MGCU Descripción general
LPDDR (Low Power Double Data Rate) SDRAM is a class of memory optimized for mobile and battery-powered systems, sitting within the broader DRAM -> synchronous DRAM -> memory IC -> semiconductor hierarchy. LPDDR5X extends the LPDDR5 JEDEC architecture with higher data rates and improved power efficiency, making it the dominant main-memory technology for mobile SoCs from Qualcomm, MediaTek, and Samsung Exynos.
Key features of this device include the 8 Gbit density in a single-die 1G x 32 organization, the LPDDR5X interface with substantially higher transfer rates than LPDDR5, and the compact FBGA-315 footprint used across Samsung's 315-ball LPDDR5X family. Samsung LPDDR5X devices also support advanced power-management features inherited from LPDDR5, including Deep Sleep Mode and per-bank refresh, which reduce idle power in always-on mobile workloads.
Architecturally, the die integrates Samsung's advanced DRAM process technology with LPDDR5X I/O that supports dynamic voltage and frequency scaling. The x32 organization simplifies main-memory subsystem design for SoCs requiring 32-bit or wider buses in PoP (Package-on-Package) or discrete-memory configurations, and multiple devices can be stacked or channel-interleaved to widen the memory bus.
Typical applications include flagship smartphone main memory, tablet and notebook LPDDR subsystems, automotive cockpit and ADAS compute platforms, and edge-AI accelerator boards where high bandwidth per watt is the primary selection criterion.
When designing with this part, verify SoC LPDDR5X controller compatibility, speed-grade suffix, and the exact 315-ball ball-map before committing the PCB footprint, since Samsung suffix codes encode speed and configuration differences that are not mechanically interchangeable.
This page synthesizes distributor sourcing data, same-family Samsung alternatives, and procurement guidance not found in the manufacturer datasheet.
Alternativas directas para K3KL8L80DM-MGCU — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K3KL8L80DM-MGCU (mismo factor de forma y huella) — difiere en Package, Interface, Density, Memory Type, Product Status.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →K3KL5L50QM-JGCT
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Ver hoja de datos →K3KL3L30CM-BGCU
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Ver hoja de datos →K3KL8L80DM-MGCU Valores máximos y características eléctricas
| Tipo de memoria | LPDDR5X SDRAM |
| Density | 8 Gbit |
| Organización de memoria | 1G x 32 |
| Supply Voltage (VDD) | 1.05 V |
| Encapsulado | FBGA-315 |
| Tipo de montaje | Surface Mount |
| Interfaz | LPDDR5X (JEDEC LPDDR5 backward-compatible) |
| Refresh | Self-refresh with per-bank refresh support |
| Power Management | Deep Sleep Mode (LPDDR5 feature set) |
| Configuration | Single-die, 32-bit bus |
| Estado RoHS | unknown |
| Application Segment | Mobile / Automotive / Edge AI |
Guía de configuración de pines de K3KL8L80DM-MGCU fbga-315
Configuración de pines para K3KL8L80DM-MGCU (encapsulado fbga-315). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K3KL8L80DM-MGCU.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K3KL8L80DM-MGCU es adecuado para 6 aplicacións: Flagship Smartphone Main Memory, Automotive Cockpit and ADAS Compute, Tablets and Notebooks, Edge-AI Accelerator Modules, XR and Wearable Headsets, Networking and Edge Gateways.
Flagship Smartphone Main Memory
The K3KL8L80DM-MGCU's 8 Gbit density, 1G x 32 organization, and LPDDR5X interface make it a primary choice for flagship smartphone main memory. LPDDR5X transfer rates give mobile SoCs such as Qualcomm Snapdragon and MediaTek Dimensity the bandwidth needed for large language-model inference and multi-camera processing, while the 1.05 V supply class and LPDDR5 Deep Sleep Mode keep standby drain low - a decisive factor in battery-life benchmarks. Devices are typically mounted in Package-on-Package or discrete configurations on a 32-bit or wider channel, with multiple dies channel-interleaved. The FBGA-315 footprint allows layout reuse across Samsung's 315-ball LPDDR5X family, simplifying density migration between product tiers.
Recomendado
Automotive Cockpit and ADAS Compute
Automotive digital cockpits and ADAS domain controllers require DRAM with both high bandwidth and acceptable power draw in a convection-limited enclosure. The K3KL8L80DM-MGCU provides 8 Gbit of LPDDR5X per package in the compact FBGA-315 footprint, allowing tier-1 suppliers to scale memory from entry to premium trims by changing device count rather than PCB re-spin. Its LPDDR5X interface feeds SoCs from Qualcomm (SA8xxx) and NVIDIA (Orin-class) that specify LPDDR5X memory. For automotive use, confirm the required temperature grade and Samsung qualification documentation for the exact suffix, since infotainment domains commonly accept commercial-grade LPDDR while safety domains require qualified parts.
Recomendado
Tablets and Notebooks
Mainstream tablets and thin-and-light notebooks adopt LPDDR5X to deliver near-DDR5 bandwidth at lower power in a smaller footprint. The K3KL8L80DM-MGCU's 8 Gbit, 1G x 32 configuration lets platform designers build 4 GB to 32 GB memory systems from one to four packages on a 32-bit or 64-bit bus, with channel interleaving providing bandwidth scaling. Compared with LPDDR4X, LPDDR5X reduces energy per bit transferred, directly extending battery runtime under sustained workloads such as video conferencing. Designers should budget for LPDDR5X controller training firmware and verify the Samsung ball map against the SoC compatibility list before PCB layout release.
Recomendado
Edge-AI Accelerator Modules
Edge-AI SoMs and accelerator boards need high memory bandwidth per watt to feed NPU pipelines executing transformer and CNN inference. The K3KL8L80DM-MGCU supplies 8 Gbit of LPDDR5X in the power-efficient 1.05 V class, giving AI modules substantially higher effective bandwidth than LPDDR4 designs at comparable power. The x32 organization matches typical NPU memory-controller bus widths, and multiple packages can be ganged for capacity. Because AI workloads stress sustained bandwidth rather than peak numbers, designers should validate thermals under continuous streaming; the FBGA-315 package thermals depend heavily on PCB copper spread, so follow the module vendor's layout guidance for via-in-pad ball farm cooling.
Recomendado
XR and Wearable Headsets
VR/AR headsets and smart-glasses compute platforms combine high display-refresh bandwidth with strict thermal and battery constraints, which is exactly the LPDDR5X value proposition. The K3KL8L80DM-MGCU's 8 Gbit capacity supports the large framebuffers and AI tracking workloads of standalone XR devices, while LPDDR5X power management (including Deep Sleep Mode) reduces drain during always-on sensor tracking. The small 315-ball FBGA footprint suits the dense, space-limited mainboards typical of headsets. Designers should partition refresh and rendering bandwidth across LPDDR5X channels and validate that sustained mixed GPU/NPU traffic stays within the module thermal budget.
Recomendado
Networking and Edge Gateways
Edge gateways, 5G small-cell equipment, and industrial network appliances increasingly specify LPDDR5X for packet-buffer and local-inference memory. The K3KL8L80DM-MGCU offers 8 Gbit per package on a 32-bit bus, enabling compact memory subsystems without the PCB area of DDR4 DIMM-style solutions. LPDDR5X bandwidth sustains multi-gigabit line-rate forwarding with headroom for on-device AI analytics, and the 1.05 V supply class lowers total system power versus DDR4 at equivalent bandwidth. Industrial deployments should confirm operating temperature range for the specific suffix and consider conduction-cooled layouts, since FBGA DRAM reliability depends on junction temperature control in sealed enclosures.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K3KL8L80DM-MGCU — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K3KL8L80CM-MGCT | K3KL7L70EM-MGCU | K3KL9L90CM-MGCT | K3KL5L50QM-JGCT |
|---|---|---|---|---|---|
| Package | FBGA-315 | FBGA-315 - same platform | FBGA-315 - same platform | FBGA-315 - same platform | FBGA-315 - same platform |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 8 Gbit | 8 Gbit | 7 Gbit-class | 9 Gbit-class | 5 Gbit-class |
| Supply Voltage | 1.05 V | 1.05 V class | 1.05 V class | 1.05 V class | 1.05 V class |
| Suffix / Speed Grade | -MGCU | -MGCT | -MGCU | -MGCT | -JGCT |
| Power Management Features | Deep Sleep Mode, per-bank refresh | Deep Sleep Mode, per-bank refresh | LPDDR5X feature set | LPDDR5X feature set | LPDDR5X feature set |
| Primary Application | Flagship mobile / edge AI | Flagship mobile | Mainstream mobile | High-capacity mobile / AI | Cost-optimized mobile |
Diferenciadores clave
- Full 8 Gbit density per package on a 32-bit bus (frente a K3KL7L70EM-MGCU)
- LPDDR5X interface for maximum bandwidth per watt (frente a K3KL5L50QM-JGCT)
- Family second-source position (frente a K3KL8L80CM-MGCT)
Notas de diseño
LPDDR5X data rates impose tight fly-by and DQ routing constraints. Keep length matching within the tolerance windows specified in the Samsung LPDDR5X datasheet (typically on the order of a few mils per 100 ps segment, exact values in the NDA datasheet), reference DQ/DBI signals to solid ground planes, and avoid routing memory traces across plane splits. Use on-die termination (ODT) settings from the SoC memory-controller training algorithm rather than fixed values, and re-run training after any stack-up change.
Provide separate, low-impedance rails for VDD, VDDQ and VDD2 per the Samsung power-delivery guidelines, each decoupled with a network of 0.1 uF and 1 uF ceramic capacitors placed within a few millimeters of the FBGA-315 ball farm, plus bulk capacitance near the PMIC. Estimated: a single 8 Gbit LPDDR5X device at full bandwidth can draw several hundred milliamps transient; size the PMIC for peak current with at least 20% margin and use sense points for accurate remote voltage regulation.
Samsung LPDDR suffix codes encode die configuration, speed bin, and package options, so two K3KL8L80-family parts are not automatically interchangeable: verify the ball map, address map, and SoC compatibility list before substitution. Additionally, always obtain the official NDA datasheet rather than third-party summaries - the 315-ball ball map and AC timing tables cannot be reconstructed reliably from public listings, and footprint errors discovered after fabrication require a full re-spin.
Información de cumplimiento
Compliance data not present in the provided web listings. Samsung mobile DRAM is typically RoHS compliant, but this must be confirmed from the official product page or datasheet before claiming compliance.
