K3KL8L80CM-MGCT - 32Gb LPDDR5X SDRAM x32 | Samsung
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Drop-in alternatives for K3KL8L80CM-MGCT — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →K3LK8L80CM-MGCT
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View Datasheet →K3KL8L80CM-MGCT Maximum Ratings & Electrical Characteristics
| Memory Type | LPDDR5X SDRAM |
| Density | 32 Gbit (4 GB) |
| Organization | x32 |
| Max Data Rate | 7500 Mbps |
| Clock Frequency | 3750 MHz |
| Core Supply Voltage (VDD) | 1.05 V |
| I/O Supply Voltage (VDDQ) | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | 1.8 V |
| Package | 315-ball FBGA |
| Operating Temperature | -25C to +85C |
| Mounting Type | Surface Mount |
| Interface | LPDDR5X (JEDEC LPDDR5 extension) |
| Application Segment | Mobile, Automotive, On-device AI, PC |
| Power Efficiency | ~20-25% improvement vs LPDDR5 (per Samsung) |
| RoHS Status | Compliant (per JLCPCB listing) |
K3KL8L80CM-MGCT 315-ball fbga Pin Configuration Guide
Complete pinout information for K3KL8L80CM-MGCT (315-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K3KL8L80CM-MGCT.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K3KL8L80CM-MGCT is suitable for 6 applications: Flagship Smartphone and Tablet Main Memory, On-Device AI / Edge Inference Accelerators, Automotive Infotainment and ADAS Compute, Embedded Single-Board Computers and Industrial Gateways, Network Appliance and Router Data Plane, PC and Client Computing Platforms.
Flagship Smartphone and Tablet Main Memory
The K3KL8L80CM-MGCT fits flagship mobile main-memory subsystems because its LPDDR5X interface delivers up to 7500 Mbps per pin on a x32 bus - roughly 30 GB/s peak bandwidth per device - while the 900 mV VDDQ rail (scaling to ~500 mV in low-power states) cuts I/O power versus LPDDR5. Connected to the mobile SoC memory controller over short, length-matched point-to-point traces with on-die termination, it sustains heavy multitasking and large-language-model inference workloads. Deep-sleep and per-bank power-down modes allow the DRAM to idle at very low current between bursts, which directly extends battery life in always-on devices. Thermal design should target the -25C to +85C range with attention to SoC-side heat spreading in stacked board architectures.
Recommended
On-Device AI / Edge Inference Accelerators
Edge AI modules running transformer or vision models are bandwidth-hungry yet power-constrained, and the K3KL8L80CM-MGCT addresses both constraints: 7500 Mbps x32 gives approximately 30 GB/s of streaming bandwidth for weight and activation fetch, while the ~20-25% power-efficiency gain over LPDDR5 keeps the thermal envelope small in fanless enclosures. The device is typically placed next to the NPU/SoC on a short point-to-point LPDDR5X channel; signal integrity at 7500 Mbps requires careful eye-diagram validation. Its -25C to +85C range suits industrial edge gateways, and the 4 GB capacity per die permits multi-die stacking to 8-16 GB on shared ball maps for larger models.
Recommended
Automotive Infotainment and ADAS Compute
Automotive cockpit SoCs and ADAS domain controllers demand high memory bandwidth for camera pipelines, navigation rendering, and sensor fusion, and the K3KL8L80CM-MGCT's 7500 Mbps LPDDR5X interface supplies roughly 30 GB/s per die with the low I/O voltage (900 mV VDDQ) reducing rail power in thermally tight head units. The -25C to +85C operating range covers most in-cabin and protected under-dash environments; confirm the specific Samsung automotive-grade ordering P/N for AEC-Q100 programs. Design the power tree with 1.05V core and 1.8V VDD2 rails from automotive-qualified DC-DC converters and validate LPDDR5X init/training firmware against the vehicle's cold-crank and thermal-cycling profiles.
Recommended
Embedded Single-Board Computers and Industrial Gateways
Industrial SBCs and IoT gateways benefit from the K3KL8L80CM-MGCT's balance of 4 GB capacity, 30 GB/s peak bandwidth, and low idle power through LPDDR5X power-down states. In these designs the DRAM typically pairs with application processors supporting LPDDR5X at 6400-7500 Mbps, and the x32 bus simplifies single-die channel designs on cost-sensitive boards. The FBGA-315 footprint is compact enough for crowded carrier boards, while the -25C floor suits unheated enclosures. Layout crews should allocate solid ground reference planes under address/command buses, follow length-matching rules from the Samsung design guide, and budget decoupling capacitance for 1.05V core transient currents during burst traffic.
Recommended
Network Appliance and Router Data Plane
High-throughput routers, 5G small-cell basebands, and enterprise Wi-Fi access points use LPDDR5X as packet-buffer and control-plane memory, where the K3KL8L80CM-MGCT's 7500 Mbps interface sustains line-rate forwarding lookups and queue management. The 32-bit x32 bus interfaces naturally with networking SoCs that implement 32-bit LPDDR5X channels, and the device's power-down modes cut standby draw in always-on infrastructure equipment. Because these platforms run 24/7, derate the junction temperature against the +85C maximum and provide airflow or heatspreading over the FBGA. The 4 GB density comfortably hosts large flow tables alongside the network OS image.
Recommended
PC and Client Computing Platforms
Thin-client laptops, mini-PCs, and set-top-box SoCs with soldered (memory-down) DRAM adopt LPDDR5X dies like the K3KL8L80CM-MGCT to raise bandwidth to 7500 Mbps per pin while staying within slim chassis thermal budgets. Memory-down designs save PoP height and improve signal margins versus socketed modules; the FBGA-315 footprint integrates directly on the CPU board. The ~20-25% efficiency gain over LPDDR5 translates into longer battery runtime for ultraportables, and multi-die stacking on the same ball map scales capacity to 8 GB and beyond. Firmware must implement LPDDR5X training and DVFS per the SoC vendor's reference code.
Recommended
Recommended Products Summary
Engineering reference data for K3KL8L80CM-MGCT — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K3KL8L80QM-MUCT | K3LK8L80CM-MGCT | K3KL5L50QM-JGCT | K3KL3L30CM-BGCT |
|---|---|---|---|---|---|
| Package | 315-ball FBGA | 315-ball FBGA - same | 315-ball FBGA family | 315-ball FBGA family | 315-ball FBGA family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Density | 32 Gbit (4 GB) | [DATA_NEEDED] | 32 Gbit (family 8Gb-class die) | 16 Gbit class | 12 Gbit class |
| Organization | x32 | [DATA_NEEDED] | x32 | [DATA_NEEDED] | [DATA_NEEDED] |
| Core Supply Voltage | 1.05 V | 1.05 V (LPDDR5X standard) | 1.05 V (LPDDR5X standard) | 1.05 V (LPDDR5X standard) | 1.05 V (LPDDR5X standard) |
| Max Data Rate | 7500 Mbps | [DATA_NEEDED] (bin-dependent) | [DATA_NEEDED] (bin-dependent) | [DATA_NEEDED] (bin-dependent) | [DATA_NEEDED] (bin-dependent) |
| Operating Temperature | -25C to +85C | [DATA_NEEDED] (grade suffix dependent) | -25C to +85C (family standard) | [DATA_NEEDED] (grade suffix dependent) | [DATA_NEEDED] (grade suffix dependent) |
Key Differentiators
- 7500 Mbps LPDDR5X rate bin (vs K3KL3L30CM-BGCT)
- ~20-25% power-efficiency gain over LPDDR5 (vs LPDDR5-generation Samsung DRAM)
- 4 GB capacity on standard 315-ball footprint (vs K3KL2L20DM-JGCT)
Design Notes
At 7500 Mbps, LPDDR5X routing demands strict length matching within the datasheet skew budget across the 32-bit data bus, DQS strobes, and CA bus, with solid reference planes and no stubs. Follow the SoC vendor's LPDDR5X layout guide and Samsung's system design guide together; run IBIS-AMI simulation of the full channel before tape-out. On-die termination and equalization settings are programmed through mode registers during memory training, so budget firmware effort for per-board training validation across process, voltage, and temperature corners.
Design the power tree with three rails: VDD 1.05V core, VDDQ 900 mV I/O (with DVFS scaling capability toward ~500 mV in low-power states per LPDDR5X), and VDD2 1.8V. Use a low-noise buck converter with remote sensing for the core rail and place bulk (22-47 uF) plus high-frequency (0.1 uF) decoupling at each rail's ball cluster. Estimated: burst core transient currents can reach ampere-class on 32-bit LPDDR5X, so verify droop with a PDN impedance target set by the Samsung design guide rather than assuming static-load figures.
Common mistakes: (1) assuming K3KL and K3LK variants are interchangeable without checking die-stacking configuration and ball map in the Samsung datasheet - stacking changes thermal and init behavior; (2) ignoring the -25C minimum, which is narrower than consumer 0C-floor parts in the other direction - verify against your environment; (3) skipping LPDDR5X power-up sequencing of VDD2/VDD/VDDQ rails, which can cause initialization faults. Always verify the exact speed-bin suffix (-MGCT) against the SoC memory controller's supported rate before finalizing the BOM.
Compliance Information
RoHS compliance per JLCPCB parts library listing. REACH, lead-free, halogen-free, and conflict-minerals status require Samsung official environmental documentation for the specific date code.
