K3KL9L90DM-MGCU - LPDDR5X 64Gb x32 8533Mbps FBGA | Samsung
N.º de pieza: K3KL9L90DM-MGCU ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $81.48 | $81,48 |
| 10 | $77.4 | $774,00 |
| 100 | $73.54 | $7.354,00 |
| 500 | $69.87 | $34.935,00 |
| 1.000 | $66.4 | $66.400,00 |
K3KL9L90DM-MGCU Descripción general
LPDDR5X (Low Power Double Data Rate 5X) is the JEDEC-defined evolution of the LPDDR5 standard, extending the data-rate ceiling far beyond LPDDR5 while retaining low-voltage signaling for battery-powered and thermally constrained platforms. In the memory hierarchy it sits as a synchronous DRAM directly soldered onto the host PCB (memory -> DRAM -> SDRAM -> LPDDR family), typically paired with application processors or SoCs in smartphones, tablets, AI edge devices, and automotive infotainment systems.
Key features of the K3KL9L90DM-MGCU include its 8533 Mbps pin speed, which places it at the top of the LPDDR5X speed grade ladder and delivers class-leading bandwidth for memory-hungry AI inference and high-refresh-rate display workloads; its 32-bit-wide channel organization, which simplifies single-channel SoC integrations; and the compact 315-ball FBGA footprint that conserves PCB area in dense mobile designs. Samsung is the volume leader in LPDRAM manufacturing, and this part belongs to Samsung's 10nm-class LPDDR5X family used across flagship mobile platforms.
Architecturally, the device uses LPDDR5X low-voltage I/O signaling and dynamic voltage/frequency scaling governed by the JEDEC LPDDR5X protocol, allowing the memory controller to trade speed against power in real time. Deep power-down and partial-array self-refresh modes minimize standby drain in always-on scenarios such as voice wakeup and background sensing.
Typical applications include flagship smartphone main memory, AI edge accelerator buffering, automotive infotainment and ADAS perception platforms, and high-performance embedded computing modules where soldered-down memory yields better signal integrity and lower profile than SODIMM-based solutions.
A key design consideration: LPDDR5X routing at 8533 Mbps demands strict length matching, reference-plane integrity, and eye-diagram validation on the CA/CK/DQ nets; the memory controller and PHY must also support the exact speed grade and training sequences.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas directas para K3KL9L90DM-MGCU — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K3KL9L90DM-MGCU (mismo factor de forma y huella) — difiere en Density, Package, Interface, RoHS Status, Mounting Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K3KL9L90CM-MGCT
✅ Sustitución directa✓ En stock
$36.91 / unidad
Ver hoja de datos →K3KL9L90DM-MGCU0UT
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K3KL8L80DM-MGCU
✅ Sustitución directa✓ En stock
Consulte el precio
Ver hoja de datos →K3KL8L80DM-JGCT
✅ Sustitución directa✓ En stock
$80.7 / unidad
Ver hoja de datos →K3KL7L70EM-MGCU
✅ Sustitución directa✓ En stock
$12 / unidad
Ver hoja de datos →K3KL9L90DM-MGCU Valores máximos y características eléctricas
| Tipo de memoria | LPDDR5X SDRAM |
| Total Density | 64 Gbit (8 GB) |
| Organización de memoria | x32 |
| Velocidad de datos | 8533 Mbps per pin |
| Encapsulado | 315-ball FBGA |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | -25C to +85C |
| Standard | JEDEC LPDDR5X (LPDDR5 family) |
| Channel Configuration | 32-bit channel |
| Speed Class Designator | LPDDR5X-8533 |
| Density per Die | 16 Gbit per channel density (per distributor data) |
| Estado RoHS | Compliant |
| Manufacturer | Samsung Electronics |
Guía de configuración de pines de K3KL9L90DM-MGCU 315-ball fbga
Configuración de pines para K3KL9L90DM-MGCU (encapsulado 315-ball fbga). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K3KL9L90DM-MGCU.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K3KL9L90DM-MGCU es adecuado para 6 aplicacións: Flagship Smartphone Main Memory, AI Edge Inference Accelerators, Automotive Infotainment and ADAS, High-Performance Embedded Computing Modules, Tablets and Portable Computing, Networking and 5G Infrastructure.
Flagship Smartphone Main Memory
The K3KL9L90DM-MGCU fits flagship smartphone main-memory designs because its 8533 Mbps data rate and 64 Gbit (8 GB) density deliver the bandwidth that modern application processors demand for on-device AI, gaming, and multi-camera pipelines. Soldered in a 315-ball FBGA directly beneath or beside the SoC, it offers the shortest possible trace lengths, which preserves signal integrity at LPDDR5X speeds and keeps the assembly profile low for thin form factors. The LPDDR5X protocol's dynamic voltage and frequency scaling lets the memory controller drop to low-power states during idle and voice-wakeup scenarios, materially extending battery life compared with fixed-speed operation. Integrators should confirm the host SoC PHY supports the 8533 Mbps training sequences and plan PMIC rails accordingly for the low-voltage I/O domain.
Recomendado
AI Edge Inference Accelerators
On-device AI workloads are memory-bandwidth bound, and the K3KL9L90DM-MGCU's 8533 Mbps per-pin rate over a 32-bit channel supplies the throughput needed to stream large neural network weights and activation maps without starving the NPU. The 8 GB capacity accommodates quantized transformer and vision models directly in local memory, avoiding the latency and power cost of offloading to storage. Because the device operates from -25C to +85C, it suits industrial edge gateways and smart-camera enclosures with passive cooling. Designers should size the LPDDR5X power-delivery network for sustained bandwidth bursts during model execution and enable partial-array self-refresh in always-on wake-word and background-sensing modes to cut standby drain between inference events.
Recomendado
Automotive Infotainment and ADAS
The K3KL9L90DM-MGCU serves automotive infotainment and ADAS perception domains that need high memory bandwidth for multi-camera sensor fusion, navigation rendering, and cockpit displays. Its -25C to +85C operating range covers typical cabin and ECU environments, and the FBGA-315 soldered-down format resists vibration better than socketed memory. The 8 GB density supports running perception stacks and map data simultaneously in RAM. Note that this commercial-grade part is not inherently AEC-Q100 qualified; automotive programs should request Samsung's automotive-qualified suffix or a formally qualified family member. Power architecture should include a dedicated LPDDR5X PMIC rail with proper sequencing and dynamic voltage scaling support to meet cold-crank and low-power standby requirements.
Recomendado
High-Performance Embedded Computing Modules
System-on-module (SoM) vendors use LPDDR5X devices like the K3KL9L90DM-MGCU as soldered-down main memory on COM Express, SMARC, and proprietary high-performance modules. Compared with SODIMM-based DDR, the 315-ball FBGA package offers lower assembly height, better signal integrity at 8533 Mbps due to short controlled-impedance traces, and improved resistance to shock and vibration in industrial and aerospace deployments. The 8 GB capacity addresses virtualization and machine-learning workloads on embedded x86 and Arm hosts. Module designers should validate the LPDDR5X fly-by routing against the SoC vendor reference design and reserve thermal design margin, since sustained memory bandwidth under passive cooling raises local PCB temperatures near the DRAM stack.
Recomendado
Tablets and Portable Computing
Tablets and thin portable computers benefit from the K3KL9L90DM-MGCU's balance of capacity and power efficiency: 8 GB of LPDDR5X supports desktop-class browsers, creative applications, and multitasking, while LPDDR5X low-voltage signaling preserves battery runtime. The device's dynamic frequency scaling allows the OS to step memory speed with workload demand, reducing average power in mixed-use scenarios. The FBGA package's compact footprint fits the tight Z-height budgets of slim industrial designs, and soldered memory eliminates connector cost and contact-reliability concerns. Firmware teams should implement LPDDR5X self-refresh and deep power-down entry promptly during screen-off states, as idle DRAM power is a measurable share of total standby consumption in portable products.
Recomendado
Networking and 5G Infrastructure
5G small cells, edge routers, and network appliances increasingly deploy LPDDR5X like the K3KL9L90DM-MGCU for packet buffering, cryptography contexts, and control-plane data structures. The 8533 Mbps data rate provides headroom for line-rate forwarding table access and deep packet inspection, while the -25C to +85C rating suits outdoor enclosures and sealed radio units with limited forced airflow. The soldered FBGA-315 format withstands thermal cycling better than DIMM sockets in base-station environments. Designers should implement robust LPDDR5X training and periodic retraining in firmware to tolerate temperature swings, and qualify the part's long-term availability with Samsung, as networking programs typically demand multi-year supply commitments with change-notification coverage.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K3KL9L90DM-MGCU — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K3KL9L90CM-MGCT | K3KL9L90DM-MGCU0UT | K3KL8L80DM-MGCU | K3KL7L70EM-MGCU |
|---|---|---|---|---|---|
| Package | 315-ball FBGA | 315-ball FBGA - same | 315-ball FBGA - same | 315-ball FBGA - same | 315-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Organization | x32 | x32 | x32 | x32 | x32 |
| Memory Standard | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
Diferenciadores clave
- Top LPDDR5X speed grade bandwidth (frente a K3KL7L70EM-MGCU)
- Double the memory capacity in the same footprint (frente a K3KL8L80DM-MGCU)
- Supply-chain flexibility within one vendor family (frente a K3KL9L90CM-MGCT)
Notas de diseño
At 8533 Mbps, LPDDR5X signal integrity dominates design success. Route DQ/DQS byte lanes with matched intra-byte skew per the SoC vendor's LPDDR5X layout guide, maintain controlled single-ended impedance (typically about 40 ohm per JEDEC LPDDR5X practice; confirm with your stackup), and keep all memory nets on a continuous reference plane with no splits beneath high-speed regions. Run full SI simulation with eye-mask compliance at the highest speed grade, and budget for write-leveling and read-training margins across the -25C to +85C temperature range.
Plan the LPDDR5X power delivery with dedicated core and VDDQ rails from the host PMIC, supporting dynamic voltage scaling during speed transitions. Size the VDDQ rail decoupling with a mix of bulk and high-frequency ceramics placed close to the DRAM balls, and follow the PMIC vendor's sequencing requirements for LPDDR5X rail order. Estimated: at high-bandwidth sustained operation, LPDDR5X power scales roughly with data rate, so thermal dissipation in the FBGA area should be modeled with your SoC's reference power numbers rather than assumed negligible.
Samsung LPDDR5X ordering suffixes encode speed, temperature, and package-finish details; do not assume that similarly named K3KL9L90 family parts are identical - verify the suffix decode in the Samsung ordering-information table before substituting (for example, MGCU vs MGCT vs GCU0UT codings). Also confirm the host memory controller's supported speed grades before design-in, and treat LPDDR availability through distribution as RFQ-driven since stock fluctuates with DRAM market cycles.
Información de cumplimiento
RoHS compliance stated in JLCPCB and LCSC listings. Other declarations (REACH, halogen-free, conflict minerals) should be obtained via official Samsung compliance certificates through the distributor.