K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
N.º de pieza: K4B4G1646D-BYMA0 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $10.32 | $10,32 |
| 10 | $9.5 | $95,00 |
| 100 | $8.75 | $875,00 |
| 500 | $8 | $4.000,00 |
| 1.000 | $7.5 | $7.500,00 |
K4B4G1646D-BYMA0 Descripción general
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses an 8n-prefetch architecture to achieve high data rates. DDR3L is backward-compatible with DDR3 slots, making it a popular choice for upgrading existing systems while saving energy.
Key features include a 256M x 16 organization, 1.35V power supply, 1866 Mbps data rate, and a 96-ball FBGA package. It supports auto precharge, asynchronous reset, ZQ calibration, data mask, and dynamic on-chip termination (ODT). The operating temperature range is 0°C to +85°C, suitable for commercial and industrial environments.
The device uses a 4Gb D-die, which is the fourth generation of Samsung's DDR3L die, offering improved performance and power efficiency. The 96-ball FBGA package provides excellent thermal and electrical characteristics, enabling high-speed signal integrity in dense PCB layouts.
Typical applications include servers, networking equipment, industrial PCs, and embedded systems that require high memory density and low power. The 1.35V operation makes it ideal for power-sensitive designs, such as battery-powered devices and energy-efficient data centers.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper on-die termination calibration.
Alternativas directas para K4B4G1646D-BYMA0 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4B4G1646D-BYMA0 (mismo factor de forma y huella) — difiere en Data Rate, Package, Supply Voltage, Operating Temperature, Auto Precharge.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4B4G1646E-BYMA
✅ Sustitución directa✓ En stock
$14.3182 / unidad
Ver hoja de datos →K4B4G1646D-BYK0
✅ Sustitución directa✓ En stock
$2.9 / unidad
Ver hoja de datos →K4B4G1646D-BCMA
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K512M16HA-125
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
H5TQ4G63CFR-PBC
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AS4C256M16D3LC-10BCN
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4B4G1646D-BYMA0 Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Organización de memoria | 256M x 16 |
| Total Memory Size | 4 Gb |
| Tensión de alimentación | 1.35 V |
| Velocidad de datos | 1866 Mbps (PC3-14900) |
| Encapsulado | 96-ball FBGA |
| Rango de temperatura de funcionamiento | 0°C to +85°C |
| Lead-Free | Yes |
| Sin halógenos | Yes |
| RoHS Compliant | Yes |
| Auto Precharge | Supported |
| Asynchronous Reset | Supported |
| ZQ Calibration | Supported |
| Data Mask | Supported |
| Dynamic On-Chip Termination | Supported |
Configuración de pines de K4B4G1646D-BYMA0
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin B1 | DQ2 — Data input/output 2 |
| Pin B2 | DQ3 — Data input/output 3 |
| Pin B3 | VDDQ — I/O power supply |
| Pin B4 | DQ4 — Data input/output 4 |
| Pin C1 | DQ5 — Data input/output 5 |
| Pin C2 | DQ6 — Data input/output 6 |
| Pin C3 | DQ7 — Data input/output 7 |
| Pin C4 | VSS — Ground |
Aplicaciones típicas
K4B4G1646D-BYMA0 es adecuado para 6 aplicacións: Server Memory, Networking Equipment, Industrial PCs, Embedded Systems, Consumer Electronics, Automotive Infotainment.
Server Memory
The K4B4G1646D-BYMA0 provides high-density, low-power memory for servers, enabling efficient data processing and reduced energy costs. Its 1866 Mbps data rate and 1.35V operation make it ideal for cloud computing and data centers where power efficiency is critical. The 4Gb capacity supports large workloads, and the FBGA package ensures reliable performance in dense server boards.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BYMA0 offers fast data buffering and low latency. Its high data rate and 1.35V operation reduce power consumption, which is crucial for always-on network devices. The auto precharge and ODT features improve signal integrity, ensuring reliable data transmission in high-speed network interfaces.
Recomendado
Industrial PCs
Industrial PCs require robust memory that can operate in harsh environments. The K4B4G1646D-BYMA0's 0°C to +85°C temperature range and lead-free, halogen-free construction make it suitable for industrial applications. Its 4Gb capacity and 1866 Mbps speed support demanding industrial control and automation tasks, while the FBGA package provides durability.
Recomendado
Embedded Systems
For embedded systems, the K4B4G1646D-BYMA0 offers a balance of performance and power efficiency. Its 1.35V operation extends battery life in portable devices, and the 4Gb capacity supports complex applications like real-time data processing. The small FBGA package is ideal for space-constrained designs, and the ZQ calibration feature ensures accurate on-die termination.
Recomendado
Consumer Electronics
In consumer electronics like smart TVs and set-top boxes, the K4B4G1646D-BYMA0 provides high-speed memory for smooth multimedia playback. Its 1866 Mbps data rate handles 4K video streams, while 1.35V operation reduces heat and power consumption. The RoHS compliance makes it suitable for consumer products sold globally.
Recomendado
Automotive Infotainment
The K4B4G1646D-BYMA0 is used in automotive infotainment systems for navigation, audio, and video processing. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 4Gb capacity supports complex user interfaces. The FBGA package withstands vibration and temperature variations, making it reliable for automotive environments.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4B4G1646D-BYMA0 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4B4G1646E-BYMA | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to +85°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes |
Diferenciadores clave
- Low voltage operation (1.35V) (frente a Standard DDR3 (1.5V))
- High data rate (1866 Mbps) (frente a K4B4G1646D-BYK0 (1600 Mbps))
- Enhanced temperature range (frente a K4B4G1646D-BYK0 (0°C to +85°C))
Notas de diseño
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper calibration. Follow the layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps.
The K4B4G1646D-BYMA0 operates up to +85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, monitor the junction temperature to avoid exceeding the maximum rating.
At 1866 Mbps, signal integrity is critical. Use controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential) and minimize trace length mismatches. Implement proper termination and use the dynamic ODT feature to reduce reflections. Simulate the memory bus to verify timing margins.
Información de cumplimiento
RoHS compliant and lead-free per datasheet. Halogen-free. No AEC-Q100 qualification for this memory component.
