K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
N.º de pieza: K4A8G165WB-BIRC ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $40.78 | $40,78 |
| 10 | $40.72 | $407,20 |
| 100 | $40.5 | $4.050,00 |
| 500 | $40 | $20.000,00 |
| 1.000 | $39.5 | $39.500,00 |
K4A8G165WB-BIRC Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) to reduce power consumption, and features higher density and improved signal integrity. DDR4 is a key component in computing systems, networking equipment, and embedded applications, providing the main memory for processors and controllers.
Key features of the K4A8G165WB-BIRC include a density of 8Gb, a 16-bit I/O interface, and a data rate of 2400 Mbps. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes on-die termination (ODT) for improved signal quality. It also features programmable read and write latencies, and supports burst lengths of 8 and 16, enabling efficient data transfers.
The K4A8G165WB-BIRC utilizes Samsung's advanced B-die process technology, which offers lower power consumption and higher speed grades compared to previous generations. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for high-density PCB designs. The device is designed to meet JEDEC DDR4 standards, ensuring compatibility with a wide range of controllers and systems.
Typical applications include high-performance computing, servers, networking switches, and industrial automation systems. The wide temperature range and high reliability make it ideal for mission-critical applications where data integrity is paramount. The 1.2V operation reduces power consumption, making it suitable for power-sensitive designs.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR4 interface requires careful PCB layout to maintain signal integrity, including impedance matching and length matching for data and address lines. Refer to the Samsung datasheet for detailed timing and layout guidelines.
Alternativas directas para K4A8G165WB-BIRC — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4A8G165WB-BIRC (mismo factor de forma y huella) — difiere en Memory Type, Package, Data Rate, Interface, Supply Voltage.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4A8G165WB-BIRG
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
K4A8G165WB-BIRH
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
K4A8G165WB-BCRC
✅ Sustitución directa✓ En stock
$12.57 / unidad
Ver hoja de datos →MT41K256M16HA-125
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$6.3636 / unidad
Ver hoja de datos →H5TC4G63AFR-PBA
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$3.9773 / unidad
Ver hoja de datos →K4A8G165WB-BIRC Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Density | 8 Gbit |
| Organización de memoria | 512M x 16 |
| Velocidad de datos | 2400 Mbps |
| Tensión de alimentación | 1.2 V |
| Rango de temperatura de funcionamiento | -40°C to +95°C |
| Encapsulado | 96-ball FBGA |
| Interfaz | 16-bit |
| DLL Enabled Mode | Yes |
| On-Die Termination (ODT) | Yes |
| Burst Length | 8, 16 |
| Row Address | 16 bits |
| Column Address | 10 bits |
| Bank Count | 16 banks |
| RoHS Compliant | Yes |
Configuración de pines de K4A8G165WB-BIRC
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
Aplicaciones típicas
K4A8G165WB-BIRC es adecuado para 6 aplicacións: High-Performance Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Embedded Systems, Data Center Servers.
High-Performance Computing
The K4A8G165WB-BIRC provides 8Gb DDR4 memory with 2400 Mbps data rate, ideal for HPC systems requiring high bandwidth and low latency. Its 1.2V operation reduces power consumption, and the wide temperature range ensures reliability in demanding environments. Used as main memory in servers and workstations, it supports large datasets and complex computations.
Recomendado
Networking Equipment
In networking switches and routers, the K4A8G165WB-BIRC offers high-density memory for packet buffering and routing tables. Its 2400 Mbps speed ensures fast data processing, while the 96-ball FBGA package fits compact line cards. The wide temperature range supports outdoor and industrial networking deployments.
Recomendado
Industrial Automation
The K4A8G165WB-BIRC operates from -40°C to +95°C, making it suitable for industrial automation systems exposed to harsh conditions. Its 8Gb capacity supports complex control algorithms and data logging. The 1.2V supply reduces heat generation, enhancing system reliability in enclosed cabinets.
Recomendado
Automotive Infotainment
With a wide temperature range and high reliability, the K4A8G165WB-BIRC is suitable for automotive infotainment systems. It provides 8Gb memory for navigation, multimedia, and connectivity features. The 1.2V operation aligns with automotive power budgets, and the FBGA package withstands vibration and thermal cycling.
Recomendado
Embedded Systems
The K4A8G165WB-BIRC is ideal for embedded systems requiring high memory density in a compact form factor. Its 96-ball FBGA package saves PCB space, and the 2400 Mbps speed supports real-time data processing. The wide temperature range allows deployment in various environments, from consumer to industrial.
Recomendado
Data Center Servers
In data center servers, the K4A8G165WB-BIRC provides high-capacity, high-bandwidth memory for virtualization, databases, and cloud applications. Its 2400 Mbps data rate and 8Gb density enable efficient multitasking. The 1.2V supply reduces power consumption, contributing to lower operating costs in large-scale deployments.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4A8G165WB-BIRC — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4A8G165WB-BIRG | K4A8G165WB-BIRH | K4A8G165WB-BCRC | MT41K256M16HA-125 | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 4 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Diferenciadores clave
- Wide temperature range of -40°C to +95°C (frente a MT41K256M16HA-125)
- Higher density of 8Gb (frente a H5TC4G63AFR-PBA)
- Samsung B-die process (frente a K4A8G165WB-BCRC)
Notas de diseño
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address lines. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The K4A8G165WB-BIRC operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits.
Use on-die termination (ODT) settings to match the memory bus impedance. For 2400 Mbps, enable the DLL and set the correct write/read latency. Follow the Samsung layout guidelines for VREF and DQS signals to ensure reliable operation.
Información de cumplimiento
RoHS compliance indicated by Samsung's product page. Other compliance data not specified in the provided sources.
