K4A8G165WB-BCTD - 8Gb DDR4 SDRAM x16 | Samsung
N.º de pieza: K4A8G165WB-BCTD ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $48.62 | $48,62 |
| 10 | $45.12 | $451,20 |
| 100 | $42 | $4.200,00 |
| 500 | $39.5 | $19.750,00 |
| 1.000 | $37 | $37.000,00 |
K4A8G165WB-BCTD Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher bandwidth and lower power consumption compared to DDR3. It achieves data rates up to 3200 Mbps/pin while operating at 1.2V, a 20% reduction from DDR3's 1.5V. DDR4 is the industry standard for main memory in servers, desktops, laptops, and increasingly in embedded applications such as networking and industrial computing.
Key features include a 512M x 16 organization, 2666 Mbps data rate, 1.2V power supply, and support for JEDEC-standard features like on-die termination (ODT), ZQ calibration, and auto-precharge. The device also includes a data mask function and supports a temperature range of 0°C to +95°C (TC), making it suitable for a wide range of commercial and industrial environments.
The K4A8G165WB-BCTD is built on Samsung's advanced B-die process technology, which is known for its high speed and low latency. The 96-ball FBGA package provides excellent signal integrity and thermal performance, while the 1.2V operation reduces power consumption by up to 25% compared to DDR3, making it ideal for power-sensitive applications.
Typical applications include high-performance computing, servers, networking equipment, and embedded systems that require high memory bandwidth and capacity. The device is also used in graphics cards, set-top boxes, and automotive infotainment systems.
When designing with this component, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a reference voltage (VREF) of 0.6V.
Alternativas directas para K4A8G165WB-BCTD — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4A8G165WB-BCTD (mismo factor de forma y huella) — difiere en Data Rate, Package, Operating Temperature, Interface, Memory Size.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4A8G165WC-BCTD
✓ En stock
$41.2 / unidad
Ver hoja de datos →K4A8G165WB-BCRC
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$12.57 / unidad
Ver hoja de datos →MT41K256M16TW-107
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$14.1 / unidad
Ver hoja de datos →H5TC4G63CFR-PBA
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$6.23 / unidad
Ver hoja de datos →NT5CC256M16CP-DIB1
✓ En stock
$6 / unidad
Ver hoja de datos →K4A8G165WB-BCTD Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Organización de memoria | 512M x 16 |
| Total Density | 8 Gb |
| Velocidad de datos | 2666 Mbps/pin (PC4-2666) |
| Tensión de alimentación | 1.2 V |
| Encapsulado | 96-ball FBGA |
| Temperatura de funcionamiento | 0°C to +95°C (TC) |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
Configuración de pines de K4A8G165WB-BCTD
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | VSS — Ground |
| Pin B1 | DQ0 — Data input/output 0 |
| Pin B2 | DQ1 — Data input/output 1 |
| Pin C1 | DQS0 — Data strobe 0 |
| Pin C2 | DQS0_n — Data strobe 0 complement |
| Pin D1 | A0 — Address input 0 |
| Pin D2 | A1 — Address input 1 |
| Pin E1 | BA0 — Bank address 0 |
| Pin E2 | BA1 — Bank address 1 |
| Pin F1 | CS_n — Chip select (active low) |
| Pin F2 | RAS_n — Row address strobe (active low) |
Aplicaciones típicas
K4A8G165WB-BCTD es adecuado para 6 aplicacións: High-Performance Computing, Networking Equipment, Embedded Systems, Graphics and Gaming, Automotive Infotainment, Data Center Storage.
High-Performance Computing
The K4A8G165WB-BCTD delivers 2666 Mbps data rate and 8Gb density, making it ideal for servers and workstations that require high memory bandwidth for data-intensive workloads. Its 1.2V operation reduces power consumption, and the 96-ball FBGA package supports high-density DIMM designs. In a server, it can be used in RDIMM or UDIMM modules to provide the capacity and speed needed for virtualization, database processing, and scientific computing.
Recomendado
Networking Equipment
In routers, switches, and network appliances, the K4A8G165WB-BCTD provides the high-speed memory required for packet buffering and routing tables. Its 2666 Mbps data rate ensures low latency, while the 1.2V supply helps meet strict power budgets. The device's on-die termination and ZQ calibration improve signal integrity in high-speed PCB designs, making it suitable for 100GbE and beyond.
Recomendado
Embedded Systems
For embedded applications like industrial PCs, medical devices, and test equipment, the K4A8G165WB-BCTD offers a balance of performance and power efficiency. Its 0°C to +95°C temperature range covers most commercial environments, and the 96-ball FBGA package is suitable for compact designs. The device supports features like auto-precharge and data mask, which are useful in real-time control systems.
Recomendado
Graphics and Gaming
The K4A8G165WB-BCTD is used in graphics cards and gaming consoles to provide high-bandwidth memory for rendering and texture storage. Its 2666 Mbps data rate and 8Gb capacity support high-resolution textures and complex scenes. The low power consumption of DDR4 helps manage thermal loads in compact gaming devices, and the B-die's low latency is beneficial for frame pacing.
Recomendado
Automotive Infotainment
In automotive infotainment systems, the K4A8G165WB-BCTD provides the memory needed for navigation, multimedia, and connectivity features. While not AEC-Q100 qualified, it can be used in non-safety-critical infotainment modules where the operating temperature range of 0°C to +95°C is acceptable. Its high bandwidth supports smooth video playback and responsive user interfaces.
Recomendado
Data Center Storage
In data center storage systems, the K4A8G165WB-BCTD is used in cache memory for SSDs and storage controllers. Its high data rate and low latency improve I/O performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's reliability features, such as on-die termination, ensure stable operation in high-speed interfaces.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4A8G165WB-BCTD — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4A8G165WC-BCTD | K4A8G165WB-BCRC | MT41K256M16TW-107 | H5TC4G63CFR-PBA | NT5CC256M16CP-DIB1 |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | Nanya Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Samsung B-die process (frente a K4A8G165WC-BCTD)
- Wide availability and ecosystem support (frente a MT41K256M16TW-107)
- Proven reliability in high-speed designs (frente a H5TC4G63CFR-PBA)
Notas de diseño
For high-speed DDR4 routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Keep trace lengths matched within +/- 10 mils for each byte lane. Use ground planes beneath all signal layers to minimize crosstalk and ensure signal integrity.
Decouple the VDD pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the package. Use a 10uF bulk capacitor on the VDD rail. The VREF voltage should be bypassed with a 0.1uF capacitor to ground. Ensure the power supply has low impedance at high frequencies to maintain stable operation.
The K4A8G165WB-BCTD operates up to +95°C TC. In high-density designs, ensure adequate airflow or a heatsink to keep the case temperature within limits. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA), so calculate power dissipation based on your data rate and activity factor.
Información de cumplimiento
RoHS compliance is assumed based on Samsung's general compliance, but not explicitly stated in the provided data. AEC-Q100 not applicable as this is not an automotive-grade part.
