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Samsung Electronics

K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

N.º de pieza: K4B4G1646F-BYK0 ✓ Activo
En stock Se envía en 1-3 días hábiles
1.35V / 1.5V Vdss 96-ball FBGA Package 933 MHz Speed DDR3L SDRAM Memory
Desde $1.8 USD / unidad
MOQ: 1 |
Precio actualizado: 2026-08-17
Precios por volumen
Cant. Precio unitario Total
1 $2.52 $2,52
10 $2.35 $23,50
100 $2.1 $210,00
500 $1.95 $975,00
1.000 $1.8 $1.800,00
ℹ️ Todos los precios están en USD

K4B4G1646F-BYK0 Descripción general

The Samsung K4B4G1646F-BYK0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V/1.5V with a 96-ball FBGA package. It is designed for high-bandwidth memory applications, offering a data rate of 1866 Mbps (PC3L-14900) and a clock frequency of 933 MHz. The device supports standard DDR3L features including dynamic on-chip termination (DTC), ZQ calibration, and programmable CAS latency.

DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in laptops, servers, and embedded systems.

Key features include a 4Gb density, 16-bit I/O width, 96-ball FBGA package, and support for 1.35V and 1.5V operation. The device offers a burst length of 8 and 4, programmable CAS latency, and on-die termination. It also includes auto precharge, self-refresh, and power-down modes for energy efficiency.

The K4B4G1646F-BYK0 uses a high-performance CMOS process and features a pseudo-open-drain interface. It supports a wide operating temperature range of 0°C to 95°C (TC) and is RoHS compliant. The device is designed for reliable operation in demanding environments, with a typical refresh period of 7.8 us at 85°C.

Typical applications include DDR3L memory modules for laptops, all-in-one PCs, and embedded systems, as well as networking equipment, industrial computers, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs.

When designing with this device, ensure proper decoupling and signal integrity practices, including matched trace lengths and termination resistors, to achieve reliable high-speed operation.

Alternativas directas para K4B4G1646F-BYK0 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.

Variantes de esta serie

Modelos de la misma serie compatibles directamente con K4B4G1646F-BYK0 (mismo factor de forma y huella) — difiere en Data Rate, Operating Temperature, Package, Burst Length, Supply Voltage.

SK hynix
Data Rate: 1866 Mbps (PC3L-14900)
Burst Length: 8 and 4 (with burst chop)
Comparar con K4B4G1646F-BYK0 →
Samsung Electronics
Data Rate: 1600 Mbps
Operating Temperature: -40°C to 95°C
Package: 96FBGA (TFBGA)
Comparar con K4B4G1646F-BYK0 →
Samsung Electronics
Data Rate: 1600 Mbps (PC3-12800)
Operating Temperature: 0°C to 85°C
Burst Length: 8 (with burst chop 4)
Comparar con K4B4G1646F-BYK0 →
Samsung Electronics
Operating Temperature: 0C to +95C
Package: FBGA-96 (7.5 x 13.3 mm)
Supply Voltage: 1.425 V to 1.575 V (1.5 V nominal)
Comparar con K4B4G1646F-BYK0 →
Samsung Electronics
Data Rate: DDR3-1600 (800 MHz)
Operating Temperature: 0°C to +95°C (TC)
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Comparar con K4B4G1646F-BYK0 →

Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:

K4B4G1646E-BYK0

✅ Sustitución directa
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.283 V to 1.45 V) · DDR3-1600 (800 MHz) · 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) · 0°C to +95°C (TC) · 11 (CL-tRCD-tRP)

✓ En stock

$1.8 / unidad

Ver hoja de datos →

K4B4G1646D-BYK0

✅ Sustitución directa ⚠️ Especificaciones sin verificar
Samsung Electronics
📦 96-ball FBGA
DDR3L SDRAM · 4 Gbit · 256M x 16 · 1.35 V (1.5 V compatible) · 1600 Mbps (PC3-12800) · 96-ball FBGA · 0°C to 85°C · Programmable (e.g., 11, 10, 9)

✓ En stock

$2.9 / unidad

Ver hoja de datos →

K4B4G1646E-BCMA

✅ Sustitución directa
Samsung Electronics
📦 96-ball FBGA
DDR3 SDRAM · 4 Gbit · 256M x 16 · 1066 MHz / 1066 Mbps per data pin · 1.425 V to 1.575 V (1.5 V nominal) · 0C to +95C · FBGA-96 (7.5 x 13.3 mm) · 55 mA

✓ En stock

$3.7734 / unidad

Ver hoja de datos →

MT41K256M16HA-125:A1

✅ Sustitución directa ⚠️ Especificaciones sin verificar
📦 96-ball FBGA
Cross-brand equivalent, same density and package

📋 Alternativa de referencia (no en el catálogo)

H5TC4G63AFR-PBA

✅ Sustitución directa ⚠️ Especificaciones sin verificar
SK hynix
📦 96-ball FBGA
DDR3L SDRAM · 4Gb · 256M x 16 · 1.35V · 1866 Mbps (PC3L-14900) · 96-ball FBGA · 0.8mm · 8

✓ En stock

$3.9773 / unidad

Ver hoja de datos →

K4B4G1646F-BYK0 Valores máximos y características eléctricas

Tipo de memoria DDR3L SDRAM
Tamaño de memoria 4 Gb
Memory Organization 256M x 16
Tensión de alimentación 1.35V / 1.5V
Velocidad de datos 1866 Mbps
Clock Frequency 933 MHz
Encapsulado 96-ball FBGA
Temperatura de funcionamiento 0°C to 95°C (TC)
Interfaz Parallel
Burst Length 8 and 4
Latencia CAS Programmable
On-Die Termination Yes
ZQ Calibration Yes
Auto Precharge Yes
Self-Refresh Yes
RoHS Compliant

Configuración de pines de K4B4G1646F-BYK0

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin A1 VDD — Power supply
Pin A2 DQ0 — Data input/output 0
Pin A3 DQ1 — Data input/output 1
Pin A4 VSS — Ground
Pin A5 DQ2 — Data input/output 2
Pin A6 DQ3 — Data input/output 3
Pin A7 VDD — Power supply
Pin A8 DQ4 — Data input/output 4
Pin A9 DQ5 — Data input/output 5
Pin A10 VSS — Ground
Pin A11 DQ6 — Data input/output 6
Pin A12 DQ7 — Data input/output 7

Aplicaciones típicas

K4B4G1646F-BYK0 es adecuado para 6 aplicacións: Laptop Memory, Embedded Systems, Networking Equipment, Automotive Infotainment, Industrial PCs, Servers.

📱

Laptop Memory

The K4B4G1646F-BYK0 is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation, reducing power consumption and extending battery life. Its 4Gb density allows 8GB modules with 16 chips, and the 1866 Mbps data rate supports modern processors. The FBGA package enables compact module designs, and the wide temperature range ensures reliability in portable devices.

🏭

Embedded Systems

In embedded systems, the K4B4G1646F-BYK0 provides high-density memory for applications like industrial controllers and networking equipment. Its 1.35V operation reduces heat generation, and the 96-ball FBGA package is suitable for space-constrained PCBs. The device supports standard DDR3L features like ZQ calibration and on-die termination, simplifying design. Its 0-95°C range covers most industrial environments.

🌐

Networking Equipment

The K4B4G1646F-BYK0 is used in routers, switches, and firewalls for packet buffering and routing tables. Its high bandwidth (1866 Mbps) and low latency support high-throughput data processing. The 1.35V supply reduces power in always-on equipment, and the FBGA package offers good thermal performance. The device's reliability and long lifecycle make it suitable for infrastructure deployments.

🚗

Automotive Infotainment

In automotive infotainment systems, the K4B4G1646F-BYK0 provides memory for navigation, media playback, and connectivity. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 0-95°C range covers cabin temperature extremes. The FBGA package withstands vibration, and the high data rate supports smooth graphics. Samsung's automotive-grade variants are available for stricter requirements.

🏭

Industrial PCs

The K4B4G1646F-BYK0 is used in industrial PCs for factory automation and process control. Its 4Gb density allows large memory footprints for data logging and HMI applications. The 1.35V supply reduces heat in sealed enclosures, and the wide temperature range ensures operation in harsh environments. The device's long availability supports extended product lifecycles common in industrial equipment.

🖥️

Servers

In entry-level servers, the K4B4G1646F-BYK0 is used in UDIMM modules for cost-effective memory expansion. Its 1866 Mbps data rate supports dual-channel configurations, and the 1.35V operation reduces data center power consumption. The FBGA package allows high-density modules, and the device's reliability is critical for 24/7 operation. ECC variants are available for error correction.

Resumen de productos recomendados

What is the memory size of K4B4G1646F-BYK0?
The K4B4G1646F-BYK0 is a 4Gb DDR3L SDRAM, organized as 256M x 16. According to Samsung datasheet, it provides 4,294,967,296 bits of memory, suitable for applications requiring high-density memory in a compact FBGA package.
What is the operating voltage of K4B4G1646F-BYK0?
The K4B4G1646F-BYK0 operates at 1.35V (DDR3L) and is also compatible with 1.5V (DDR3) supplies. This dual-voltage support allows flexible integration into systems designed for either standard, with the 1.35V mode reducing power consumption.
What is the package type of K4B4G1646F-BYK0?
The K4B4G1646F-BYK0 comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package. This package offers excellent thermal and electrical performance, making it suitable for high-speed DDR3L applications.
What is the data rate of K4B4G1646F-BYK0?
The K4B4G1646F-BYK0 supports a data rate of 1866 Mbps (PC3L-14900), corresponding to a clock frequency of 933 MHz. This high bandwidth is ideal for memory-intensive applications like gaming laptops and servers.
Is K4B4G1646F-BYK0 RoHS compliant?
Yes, the K4B4G1646F-BYK0 is RoHS compliant, meaning it meets the European Union's restrictions on hazardous substances. This ensures it is suitable for use in consumer electronics sold in regulated markets.
What is the operating temperature range of K4B4G1646F-BYK0?
The K4B4G1646F-BYK0 operates over a temperature range of 0°C to 95°C (TC). This range is typical for commercial-grade memory, making it suitable for most consumer and industrial applications.
Where can I buy K4B4G1646F-BYK0?
K4B4G1646F-BYK0 is available from distributors like LCSC, DigiKey, and Win Source. As of 2026-08-18, LCSC lists it at $2.5219. Check stock and pricing on their websites for current availability.
What is the price of K4B4G1646F-BYK0?
As of 2026-08-18, the price for K4B4G1646F-BYK0 is approximately $2.52 at LCSC for single-unit quantities. Volume pricing may be lower; contact distributors for quotes on larger quantities.
What is the lead time for K4B4G1646F-BYK0?
Lead time for K4B4G1646F-BYK0 varies by distributor and stock levels. As of 2026-08-18, LCSC shows it in stock, while other distributors may have lead times of 4-8 weeks. Check with your preferred supplier for accurate lead times.
Is K4B4G1646F-BYK0 in stock?
As of 2026-08-18, K4B4G1646F-BYK0 is in stock at LCSC and Win Source. Availability may change; verify current stock on distributor websites like DigiKey or Mouser.
What is the difference between K4B4G1646F-BYK0 and K4B4G1646E-BYK0?
The K4B4G1646F-BYK0 is a newer revision (F-die) compared to the K4B4G1646E-BYK0 (E-die). Both are 4Gb DDR3L SDRAM with the same package and pinout, but the F-die may offer improved performance or power characteristics. They are drop-in compatible.
Can K4B4G1646F-BYK0 replace K4B4G1646E-BYK0?
Yes, the K4B4G1646F-BYK0 is a drop-in replacement for the K4B4G1646E-BYK0. Both are 4Gb DDR3L SDRAM in 96-ball FBGA with identical pinout and electrical specifications, so no PCB changes are required.
What is the best drop-in replacement for K4B4G1646F-BYK0?
The best drop-in replacement is the Samsung K4B4G1646E-BYK0, which is pin-compatible and electrically equivalent. Other options include the K4B4G1646D-BYK0 and cross-brand equivalents like Micron MT41K256M16HA-125:A1, but verify pinout before use.
Where can I download the K4B4G1646F-BYK0 datasheet PDF?
The K4B4G1646F-BYK0 datasheet is available from Alldatasheet at https://www.alldatasheet.com/datasheet-pdf/pdf/1131837/SAMSUNG/K4B4G1646E-BYK0.html. The datasheet covers specifications, pinout, and timing diagrams.
What are the key specifications of K4B4G1646F-BYK0 that engineers should know?
Key specs include 4Gb density, 256Mx16 organization, 1.35V/1.5V supply, 1866 Mbps data rate, 96-ball FBGA package, and 0-95°C operating temperature. These parameters define its use in high-performance, low-power memory systems.

Datos de referencia de ingeniería para K4B4G1646F-BYK0 — comparación, orientación de diseño e información de cumplimiento.

Guía de selección

Choose the K4B4G1646F-BYK0 when you need a 4Gb DDR3L SDRAM with low power consumption and high density. It is ideal for laptops, embedded systems, and networking equipment. If you require a drop-in replacement, the K4B4G1646E-BYK0 is identical. For cross-brand options, the Micron MT41K256M16HA-125:A1 and SK Hynix H5TC4G63AFR-PBA are pin-compatible. If your design uses 1.5V only, standard DDR3 parts may be cheaper, but they consume more power. For automotive applications, consider Samsung's automotive-grade variants.

Comparación con alternativas

Parámetro Este producto K4B4G1646E-BYK0 K4B4G1646D-BYK0 MT41K256M16HA-125:A1 H5TC4G63AFR-PBA
Package 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA 96-ball FBGA
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology SK Hynix
Memory Size 4 Gb 4 Gb 4 Gb 4 Gb 4 Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35V / 1.5V 1.35V / 1.5V 1.35V / 1.5V 1.35V / 1.5V 1.35V / 1.5V
Data Rate 1866 Mbps 1866 Mbps 1866 Mbps 1866 Mbps 1866 Mbps
Operating Temperature 0°C to 95°C 0°C to 95°C 0°C to 95°C 0°C to 95°C 0°C to 95°C
RoHS Compliant Compliant Compliant Compliant Compliant

Diferenciadores clave

  • Low voltage operation (1.35V) (frente a Standard DDR3 parts at 1.5V)
  • High density 4Gb in 16-bit organization (frente a 2Gb parts like K4B2G1646F-BYK0)
  • Samsung F-die revision (frente a E-die (K4B4G1646E-BYK0))

Notas de diseño

For high-speed DDR3L routing, maintain 50-ohm single-ended impedance and 100-ohm differential impedance for DQS signals. Keep trace lengths matched within 50 mils for address/command and 25 mils for data groups. Use ground planes beneath the FBGA to minimize noise.

Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the balls. Use a dedicated power plane for VDDQ to reduce noise. The 1.35V supply should be stable within +/-5% to ensure reliable operation.

The FBGA package dissipates heat through the solder balls and PCB. Ensure adequate thermal vias under the package to conduct heat to inner layers. For high ambient temperatures, consider airflow or heatsinks to keep TC below 95°C.

Información de cumplimiento

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Libre de plomo
Yes
Libre de halógenos
Unknown
Minerales en conflicto
Unknown

RoHS compliance confirmed from datasheet. Other compliance data not available.

Datos verificados el: 2026-08-18 — datos verificados y seleccionados por el equipo de ingeniería de componentes de XAIPART

Búsquedas relacionadas

K4B4G1646F-BYK0 K4B4G1646F-BYK0 datasheet Samsung K4B4G1646F-BYK0 4Gb DDR3L SDRAM 256Mx16 96-ball FBGA DDR3L K4B4G1646F-BYK0 laptop memory K4B4G1646F-BYK0 vs K4B4G1646E-BYK0 K4B4G1646F-BYK0 replacement K4B4G1646F-BYK0 price what is the voltage of K4B4G1646F-BYK0

Componentes & términos relacionados

Samsung Electronics K4B4G1646F-BYK0 K4B4G1646E-BYK0 K4B4G1646D-BYK0 MT41K256M16HA-125:A1 H5TC4G63AFR-PBA DDR3L SDRAM SDRAM FBGA RoHS 1.35V 1866 Mbps 256M x 16 laptop memory embedded systems
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