K9F1208U0B-JIB0 - 64Mx8 512Mb NAND SLC, TSOP-I-48 | Samsung
N.º de pieza: K9F1208U0B-JIB0 ✗ Fin de vida| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.85 | $3,85 |
| 10 | $3.42 | $34,20 |
| 100 | $2.98 | $298,00 |
| 500 | $2.65 | $1.325,00 |
| 1.000 | $2.3 | $2.300,00 |
| 3.000 | $1.95 | $5.850,00 |
K9F1208U0B-JIB0 Descripción general
What is a NAND Flash Memory IC? A NAND Flash memory is a non-volatile storage device that retains data without power and uses a serialized cell array (NAND string) to deliver higher density and lower cost-per-bit than NOR Flash. Within the memory IC hierarchy, NAND sits under non-volatile memory → flash memory → solid-state storage. NAND parts are typically used for bulk data storage (firmware images, file systems, multimedia buffers) rather than execute-in-place code, and they require an external controller or software layer to perform bad-block management, wear-leveling, and ECC. SLC variants like the K9F1208U0B-JIB0 trade density for higher endurance (~100 k erase cycles per block) and faster write/erase timing than MLC/TLC counterparts, making them ideal for industrial boot, logging, and embedded OS workloads.
Key features of the K9F1208U0B-JIB0 include: 528-byte main + 16-byte spare page, 32 KiB (16 KiB × 2) block erase granularity, 10 ms typical block erase time, 200 µs typical page program time, on-chip page buffer for cache-style read/program operations, hardware WP# pin for write-protect during power transitions, and a Ready/Busy# open-drain output for polling-free controller handshaking. Power-down in-flight protection is provided via the WP# pin and an internal data-protection state machine. The TSOP-I-48 package is 18.4 mm × 12.0 mm × 1.0 mm, pin-compatible with the industry-standard TSOP-I NAND footprint.
Architecture details: the K9F1208U0B-JIB0 family uses a Samsung NAND cell with a charge-trap floating gate. The controller interface uses command-driven register loading via CLE/ALE signals, with 4-cycle addressing for the legacy 528-byte page (1 cycle column, 3 cycles row). An on-chip page register acts as both data source for read and data sink for program. The device supports copy-back programming for efficient block management without external buffer memory.
Typical applications include industrial controllers, embedded Linux/Windows CE boot media, data loggers, set-top box firmware storage, printer consumables, MP3/multimedia recorders, and replacement sourcing for legacy 3.3 V NAND designs. The wide 2.7–3.6 V supply range allows direct connection to a 3.3 V system rail with no level translation.
Design tip: pair the K9F1208U0B-JIB0 with a 1 kΩ pull-up on R/B# and a 10 kΩ pull-up on WP# to Vcc; route CE to a dedicated GPIO so partial-array power-down is possible; and always reserve 8 bytes per 528-byte page for hardware ECC (Hamming or BCH).
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para K9F1208U0B-JIB0 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K9F1208U0C-JIB0
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K9F1208U0B-PCB0
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K9F1208U0B-YIB0
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
HY27US08121B
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT29F4G08AAA
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
TC58NVG0S3HTA00
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K9F1208U0B-JIB0 Valores máximos y características eléctricas
| Tipo de memoria | Non-volatile NAND Flash (SLC) |
| Memory Density | 512 Mbit (64 M × 8) + 16 Mbit spare |
| Organización de memoria | 64M × 8 bit |
| Cell Technology | Single-Level Cell (SLC) NAND |
| Page Size | 528 bytes (512 + 16 spare) |
| Block Size | 32 KiB (16 KiB × 2 pages × 8-bit) |
| Vcc Range | 2.7 V to 3.6 V |
| Interfaz | 8-bit asynchronous NAND (CE, RE, WE, ALE, CLE, WP#, R/B#) |
| Page Program Time | 200 µs typical |
| Block Erase Time | 2 ms typical |
| Endurance | 100 k erase cycles per block |
| Data Retention | 10 years typical |
| Encapsulado | TSOP-I-48 (JIB0) 18.4 × 12.0 × 1.0 mm |
| Tipo de montaje | Surface Mount |
| Nivel MSL | 3 |
| Estado RoHS | Compliant |
Configuración de pines de K9F1208U0B-JIB0
| Pin 1 | NC — Not connected (per datasheet) |
| Pin 2 | NC — Not connected (per datasheet) |
| Pin 3 | NC — Not connected (per datasheet) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | R/B# — Ready/Busy output (open-drain, active-low) |
| Pin 8 | RE# — Read Enable (active-low) |
| Pin 9 | CE# — Chip Enable (active-low) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | NC — Not connected (per datasheet) |
| Pin 12 | Vcc — Power supply (2.7 V to 3.6 V) |
| Pin 13 | Vss — Ground |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | CLE — Command Latch Enable |
| Pin 17 | ALE — Address Latch Enable |
| Pin 18 | WE# — Write Enable (active-low) |
| Pin 19 | WP# — Write Protect (active-low) |
| Pin 20 | NC — Not connected (per datasheet) |
| Pin 21 | NC — Not connected (per datasheet) |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | NC — Not connected (per datasheet) |
| Pin 24 | NC — Not connected (per datasheet) |
| Pin 25 | NC — Not connected (per datasheet) |
| Pin 26 | NC — Not connected (per datasheet) |
| Pin 27 | NC — Not connected (per datasheet) |
| Pin 28 | NC — Not connected (per datasheet) |
| Pin 29 | I/O0 — Data I/O bit 0 |
| Pin 30 | I/O1 — Data I/O bit 1 |
| Pin 31 | I/O2 — Data I/O bit 2 |
| Pin 32 | I/O3 — Data I/O bit 3 |
| Pin 33 | Vss — Ground |
| Pin 34 | I/O4 — Data I/O bit 4 |
| Pin 35 | I/O5 — Data I/O bit 5 |
| Pin 36 | I/O6 — Data I/O bit 6 |
| Pin 37 | I/O7 — Data I/O bit 7 |
| Pin 38 | NC — Not connected (per datasheet) |
| Pin 39 | NC — Not connected (per datasheet) |
| Pin 40 | NC — Not connected (per datasheet) |
| Pin 41 | NC — Not connected (per datasheet) |
| Pin 42 | NC — Not connected (per datasheet) |
| Pin 43 | NC — Not connected (per datasheet) |
| Pin 44 | NC — Not connected (per datasheet) |
| Pin 45 | NC — Not connected (per datasheet) |
| Pin 46 | NC — Not connected (per datasheet) |
| Pin 47 | NC — Not connected (per datasheet) |
| Pin 48 | Vcc — Power supply (2.7 V to 3.6 V) |
Aplicaciones típicas
K9F1208U0B-JIB0 es adecuado para 7 aplicacións: Industrial Controller Boot Storage, Embedded Linux/Windows CE Root Filesystem, Data Logger NAND Storage, Set-Top Box Firmware Storage, Printer Consumable Cartridge Memory, MP3/Multimedia Recorder Storage, Legacy Replacement Sourcing.
Industrial Controller Boot Storage
The K9F1208U0B-JIB0 stores firmware boot images in PLCs, HMI panels, and motor controllers where reliable cold-boot recovery is required. The 512 Mbit (64 MB) capacity accommodates a full Linux rootfs plus a recovery image, while the 528-byte page size aligns with the standard NAND controller DMA in industrial SoCs (TI Sitara, NXP i.MX6). The 100 k erase-cycle endurance supports >10-year write-cycle life when paired with wear-leveling FTL. Samsung's 10-year data retention rating at 85 °C exceeds typical industrial warranty windows, and the asynchronous 8-bit interface drops directly onto legacy parallel-NAND host controllers with no glue logic. The 2.7-3.6 V Vcc matches the 3.3 V system rail on virtually every industrial SBC.
Recomendado
Embedded Linux/Windows CE Root Filesystem
Embedded Linux, VxWorks, and Windows CE platforms use the K9F1208U0B-JIB0 as a primary rootfs on cost-sensitive designs where eMMC is overkill. The 64 MB capacity holds a compressed kernel + busybox + application set typical of industrial gateways and HMIs. The standard 528-byte page and Samsung chip-id (0xEC) are first-class citizens in UBI/YAFFS2/CRAM-JNSS file systems, eliminating UBIFS partition boots. Compared to an SD card the K9F1208U0B-JIB0 offers solder-down reliability (no connector), wider temperature tolerance, and no BOM-level card-slot cost, at the expense of needing software-managed bad-block table.
Recomendado
Data Logger NAND Storage
Industrial data loggers, energy meters, and fleet telematics units use the K9F1208U0B-JIB0 as a circular buffer for high-volume telemetry. The SLC cell technology gives 100 k erase cycles per block - essential when writing a 1 KB telemetry record every 100 ms for several years. Combined with a simple block-level wear-leveling algorithm in firmware, the 64 MB array can sustain continuous writes for >5 years in a typical metering application. The asynchronous 8-bit bus fits easily alongside an SPI sensor frontend and a UART cellular modem on the same MCU. The 32 KiB block erase granularity matches standard FAT file-system cluster sizes for direct block-mapping.
Recomendado
Set-Top Box Firmware Storage
The K9F1208U0B-JIB0 stores the bootloader, kernel, and application firmware in legacy set-top boxes (STBs) and over-the-air (OTA) update receivers. The 64 MB capacity accommodates the main firmware image plus an A/B partition for safe OTA rollback. Samsung's standard SLC timing (60 ns page read) supports fast boot without an external NOR companion. The 48-pin TSOP-I footprint is identical across Samsung's K9F1G08U0B successor, enabling drop-in upgrade for next-gen SKUs. The WP# pin allows hardware write-protection during AC-power-loss events, a critical STB reliability feature.
Recomendado
Printer Consumable Cartridge Memory
Printer and copier manufacturers embed the K9F1208U0B-JIB0 (or a similar small-density NAND) inside toner/drum cartridges to log page counts, color calibration data, and OEM authentication keys. The 64 MB capacity exceeds the typical cartridge-data requirement by 100x, providing headroom for firmware-update fields. The TSOP-I-48 package is thin enough (1.0 mm) to fit inside the tight cartridge mechanical envelope. The 2.7-3.6 V Vcc runs directly from the printer's 3.3 V logic rail, and the asynchronous interface connects to a single GPIO port on the cartridge-interface MCU.
Recomendado
MP3/Multimedia Recorder Storage
Consumer MP3 players, digital voice recorders, and low-end digital cameras historically used the K9F1208U0B-JIB0 as primary storage. The 64 MB capacity supports 8-16 hours of compressed audio at 128 kbps, or ~250 JPEG photos at 1 MP resolution. The asynchronous NAND interface is fast enough for direct-DMA audio streaming at CD-quality rates without buffer under-runs. The TSOP-I-48 package is small enough to fit in slim handheld enclosures. While modern designs use microSD, the K9F1208U0B-JIB0 remains the BOM of choice for cost-sensitive or tamper-resistant designs that cannot allow end-user storage swap.
Recomendado
Legacy Replacement Sourcing
End-of-life industrial systems with installed K9F1208U0B-JIB0 NANDs need ongoing replacement-part supply for field service. Because the Samsung K9F family is in Samsung's long-life-cycle program, distributors like Jotrin, Win Source, and Veswin continue to stock genuine factory-fresh parts with full traceability. The K9F1208U0B-JIB0 is fully interchangeable with the K9F1208U0C-JIB0 (U0C revision) and the K9F1208U0B-PCB0 industrial-temperature variant, providing multiple sourcing options for field-service inventory. For new designs, see the K9F1G08U0B and K9F2G08U0B successors in the same TSOP-I-48 footprint.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K9F1208U0B-JIB0 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K9F1208U0C-JIB0 | K9F1208U0B-PCB0 | K9F1208U0B-YIB0 | HY27US08121B | MT29F4G08AAA | TC58NVG0S3HTA00 |
|---|---|---|---|---|---|---|---|
| Package | TSOP-I-48 (JIB0) | TSOP-I-48 - same | TSOP-I-48 - same | TSOP-I-48 - same | TSOP-I-48 - same | TSOP-I-48 - same | TSOP-I-48 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | Micron Technology | Kioxia |
| Density | 512 Mbit (64 MB) + 16 Mbit spare | 512 Mbit + 16 Mbit spare | 512 Mbit + 16 Mbit spare | 512 Mbit + 16 Mbit spare | 512 Mbit | 4 Gbit (4x larger) | 1 Gbit |
| Organization | 64M x 8 | 64M x 8 | 64M x 8 | 64M x 8 | 64M x 8 | 512M x 8 | 128M x 8 |
| Vcc Range | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Page Size | 528 bytes (512 + 16 spare) | 528 bytes | 528 bytes | 528 bytes | 528 bytes | 528 bytes (legacy mode) or 2K+64 (ONFI) | 528 bytes or 2K+64 |
| Cell Technology | SLC NAND | SLC NAND | SLC NAND | SLC NAND | SLC NAND | SLC NAND | SLC NAND |
| Lifecycle Status | NRND | Active | NRND | NRND | NRND | Active | Active |
| Interface | Async 8-bit NAND | Async 8-bit NAND | Async 8-bit NAND | Async 8-bit NAND | Async 8-bit NAND | Async 8-bit NAND / ONFI 1.0 | Async 8-bit NAND / Toggle 1.0 |
Diferenciadores clave
- Original Samsung long-life-cycle SLC NAND with 100 k erase-cycle rating (frente a HY27US08121B)
- Pin-compatible upgrade path to 1 Gbit and 4 Gbit densities in same TSOP-I-48 (frente a MT29F4G08AAA)
- 528-byte legacy page format supported by all major industrial NAND FTLs (frente a TC58NVG0S3HTA00)
Notas de diseño
Place a 0.1 µF decoupling capacitor as close as possible to each Vcc pin (pins 12 and 48) and a 4.7 µF bulk capacitor on the Vcc rail. The K9F1208U0B-JIB0 draws peak in-rush current during page-program operations; insufficient bulk capacitance causes Vcc droop that can corrupt writes. Add a 10 kΩ pull-up on R/B# (pin 7) and a 10 kΩ pull-up on WP# (pin 19) to Vcc to prevent spurious chip behavior during MCU reset.
Route the 8-bit I/O bus (pins 29-32, 34-37) with matched trace lengths and a continuous ground reference plane to minimize skew on the asynchronous interface. Series-terminate each I/O line with 33 Ω to dampen ringing on long (>50 mm) traces. Keep CE# (pin 9) on a dedicated GPIO so partial-array power-down can be achieved by deselecting the chip when idle, reducing standby current.
Do not assume the spare area is 100% usable - reserve at least 8 bytes per 528-byte page for hardware ECC (Hamming or BCH). Do not skip the bad-block scan at first power-up: K9F1208U0B-JIB0 ships with factory-marked bad blocks in the first and last few block addresses. Do not exceed the 100 k erase-cycle endurance on any single block without wear-leveling. Do not use the WP# pin as a software-controlled reset - it is intended for power-transition protection only.
Keep the TSOP-I-48 footprint on the top side of the PCB with no vias under the package body. Use 0.5 mm pitch, 0.3 mm wide pads with 1.0 mm length, and add a copper pour (at least 1 mm wide) along the I/O row for signal-integrity. The K9F1208U0B-JIB0 is a memory IC, not a power device, so no thermal relief is required beyond standard 4 oz copper on Vcc/Vss pins.
Tie all NC pins to ground or leave floating per datasheet (do not tie to Vcc). The asynchronous NAND interface is sensitive to noise on CLE/ALE (pins 16, 17) and CE#/RE#/WE# (pins 9, 8, 18); add 33 Ω series termination and keep these control lines away from switching-power sections. The R/B# open-drain output requires an external pull-up; verify the pull-up value against the MCU's input-current spec to ensure a fast rise time on read-complete events.
Información de cumplimiento
RoHS and REACH compliance per Samsung product page. AEC-Q100 not applicable for memory ICs (no automotive qualification offered). Halogen-free and conflict-mineral status not specified in the verified web data.
