MT41K512M16HA-125:A - 8Gb DDR3L SDRAM 1.35V | Micron Technology
N.º de pieza: MT41K512M16HA-125:A ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $77.92 | $77,92 |
| 10 | $70.13 | $701,30 |
| 100 | $62.34 | $6.234,00 |
| 500 | $54.54 | $27.270,00 |
| 1.000 | $46.75 | $46.750,00 |
MT41K512M16HA-125:A Descripción general
DDR3L SDRAM is the low-voltage version of DDR3 (1.5 V) SDRAM and is a cornerstone of modern volatile memory hierarchies. Within the memory hierarchy, SDRAM sits below CPU caches as main-system or working memory: a DRAM core organized into banks stores each bit as charge in a capacitor cell, refreshed periodically, and a synchronous interface (clocked by CK/CK#) pipelines commands to achieve high bandwidth. DDR3L parts like this one can also run in DDR3 (1.5 V) compatible mode per the manufacturer datasheet.
Key features include 8 internal banks, an 8n-bit prefetch architecture, differential bidirectional data strobes (DQS/DQS#), differential clock inputs (CK/CK#), and programmable nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals. The x16 organization simplifies 16-bit and 32-bit memory bus designs for embedded processors. The commercial operating range is 0C to +95C (Mouser lists the extended variant to 95C; the Alliance listing specifies 0C to 90C).
Architecturally, the 8-bank array with 8n prefetch and double-data-rate strobing delivers DDR-1600 bandwidth per pin while the ODT and programmable CAS latency settings let controllers tune signal integrity on fly-by or tee-topology DDR3 buses. The 96-ball FBGA (PBGA-96) surface-mount package minimizes loop inductance for clean high-speed signaling.
Typical applications include embedded main memory for industrial and networking processors, set-top boxes, automotive infotainment head units (using AIT grade variants), and memory expansion modules on single-board computers.
Design consideration: DDR3L requires proper VTT/VDDQ termination and length-matched routing per JEDEC-style DDR3 layout practice; always verify controller compatibility (ODT settings, CAS latency) before board spin.
This page synthesizes distributor pricing, drop-in alternatives from Micron, Alliance Memory, and ISSI, and practical DDR3L design notes not found in the manufacturer datasheet. Pricing as of 2026-09-10.
Alternativas directas para MT41K512M16HA-125:A — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT41K512M16HA-125 IT:A
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K512M16HA-125 AIT:A
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K512M16HA-125:A
✅ Sustitución directa✓ En stock
$46.75 / unidad
Ver hoja de datos →IS43TR16512BL-125KBL
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AS4C512M16D3L-12BCN
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K512M16HA-125:A Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Tamaño de memoria | 8 Gbit |
| Organización de memoria | 512M x 16 |
| Interfaz | Parallel |
| Clock Frequency | 800 MHz (DDR3-1600 data rate) |
| Access Time | 13.75 ns |
| Tensión de alimentación | 1.35 V (1.283 V to 1.45 V) |
| Number of Internal Banks | 8 |
| Prefetch Architecture | 8n-bit |
| On-Die Termination (ODT) | Programmable nominal and dynamic |
| Data Strobe | Differential bidirectional (DQS/DQS#) |
| Clock Inputs | Differential (CK, CK#) |
| Temperatura de funcionamiento | 0C to +95C |
| Encapsulado | 96-FBGA (9 x 14 mm) |
| Tipo de montaje | Surface Mount |
| Voltage Compatibility Mode | DDR3 (1.5 V) compatible mode supported |
| ECCN | EAR99 |
Guía de configuración de pines de MT41K512M16HA-125:A 96-fbga (9 x 14 mm)
Configuración de pines para MT41K512M16HA-125:A (encapsulado 96-fbga (9 x 14 mm)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para MT41K512M16HA-125:A.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
MT41K512M16HA-125:A es adecuado para 6 aplicacións: Embedded Industrial Main Memory, Networking and Communications Equipment, Automotive Infotainment and Displays, Set-Top Boxes and Smart TVs, Single-Board Computers and Modules, Test and Measurement Instrumentation.
Embedded Industrial Main Memory
The MT41K512M16HA-125:A provides 8 Gbit of DDR3L main memory for industrial processors and SoCs such as ARM-based controllers and FPGAs with hard DDR3 controllers. Its 1.35 V operation cuts memory subsystem power roughly 20% compared to 1.5 V DDR3, reducing thermal load in sealed industrial enclosures, while the x16 organization allows single-chip 16-bit or dual-chip 32-bit buses without byte-lane pairing complexity. The 800 MHz clock (DDR3-1600) delivers up to 3.2 GB/s per 16-bit device, enough for real-time control, data logging, and HMI frame buffers. Programmable ODT helps maintain signal integrity on multi-drop layouts. For factory-floor environments below 0C, substitute the pin-identical IT:A industrial grade variant.
Recomendado
Networking and Communications Equipment
Routers, switches, and NPUs use DDR3L SDRAM for packet buffers, routing tables, and control-plane memory. The MT41K512M16HA-125:A's 8-bank architecture with 8n prefetch sustains the random-access patterns typical of packet processing better than denser single-bank schemes, and its 3.2 GB/s per-device bandwidth at DDR3-1600 supports line-rate buffering in access-tier equipment. The differential DQS/DQS# strobing and dynamic ODT maintain timing margins across the 96-ball FBGA's controlled-impedance interconnect when four to eight devices share a fly-by address/command bus. EAR99 export classification (per the product record) simplifies deployment in international networking hardware programs.
Recomendado
Automotive Infotainment and Displays
Automotive head units, digital clusters, and displays require gigabyte-class frame buffers and application memory qualified for harsh environments. Micron's MT41K512M16HA-125 AIT:A automotive variant shares the exact die, 512M x 16 organization, and 96-ball FBGA footprint as this commercial part, letting one PCB layout serve both development (commercial parts) and production (AIT parts). At 1.35 V the memory reduces power dissipation in fan-less dash assemblies, and the DDR3-1600 speed grade sustains the 2D/3D graphics and video decode bandwidth demanded by modern IVI SoCs. x16 organization maps directly onto the 32-bit or 64-bit memory buses typical of automotive SoCs using two or four devices.
Recomendado
Set-Top Boxes and Smart TVs
Broadcast and streaming set-top boxes pair an SoC with 1 GB to 2 GB of DDR3L for channel buffering, middleware, and graphics. The MT41K512M16HA-125:A offers 8 Gbit (1 GB) per chip at DDR3-1600, meeting the bandwidth needed for 1080p60 decode with UI compositing. Its 1.35 V rail simplifies power supply design in cost-driven consumer platforms and reduces idle power for energy-regulation compliance. The 96-ball FBGA's 9 x 14 mm footprint fits densely on small main boards, and dual-voltage DDR3/DDR3L compatibility gives designers supply-chain flexibility when controller SoCs support either standard. Volume commercial temperature range (0C to +95C) matches indoor consumer environments.
Recomendado
Single-Board Computers and Modules
SBC and SOM vendors embed DDR3L SDRAM directly on the module to provide standardized memory capacity for Linux/RTOS deployments. Two MT41K512M16HA-125:A devices give 2 GB on a 32-bit bus at up to 6.4 GB/s aggregate bandwidth, appropriate for embedded vision, edge AI inference, and gateway software stacks. The x16 data width matches the 16-bit/32-bit controllers of popular ARM and RISC-V SoCs, and soldered-down DRAM (versus SODIMM) improves shock/vibration tolerance and reduces BOM cost. On-die termination relieves the controller of complex termination schemes across the module's controlled-impedance routing. Refer to the SoC vendor's memory compatibility list to confirm -125 bin CAS latency support.
Recomendado
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and data-acquisition instruments need deep capture memory with sustained streaming bandwidth. The MT41K512M16HA-125:A supplies 8 Gbit per device at DDR3-1600; stacking multiple x16 devices behind acquisition ASICs or FPGAs provides hundreds of megabytes of sample storage. Its 8-bank structure enables interleaved read/write streams, and programmable ODT plus differential strobes preserve timing margins in instruments with dense, high-agility memory buses. The dual DDR3/DDR3L mode allows reuse of proven 1.5 V DDR3 controller IP while capturing DDR3L power savings in portable instruments. Commercial 0C to +95C operation covers typical benchtop environments; use IT:A grade for chamber-tested hardware.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT41K512M16HA-125:A — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT41K512M16HA-125 IT:A | MT41K512M16HA-125 AIT:A | MT41K512M16HA-125:A (Alliance) | IS43TR16512BL-125KBL | AS4C512M16D3L-12BCN |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14) - same | 96-FBGA (9x14) - same | 96-FBGA (9x14) - same | 96-FBGA - same footprint | 96-FBGA - same footprint |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | ISSI | Alliance Memory |
| Memory Size / Organization | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 | 8 Gbit, 512M x 16 |
| Speed Grade | -125 (DDR3-1600, 800 MHz, 13.75 ns) | -125 (DDR3-1600) | -125 (DDR3-1600) | -125 (DDR3-1600) | -125 (DDR3-1600) | -12 (DDR3-1600) |
| Supply Voltage | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) |
| Grade / Qualification | Commercial | Industrial | Automotive | Commercial (second source) | Commercial/Industrial | Commercial |
Diferenciadores clave
- Broadest controller and reference-design support (frente a IS43TR16512BL-125KBL)
- Identical-die second source available (frente a MT41K512M16HA-125:A (Alliance Memory))
- Temperature/grade scaling on the same footprint (frente a MT41K512M16HA-125 IT:A / AIT:A)
Notas de diseño
Route the DDR3L address/command bus in a fly-by topology when two or more MT41K512M16HA-125:A devices share the bus, per the controller vendor's memory design guide. Keep DQ/DQS trace-length mismatch within the controller's specified window (typically +/-25 mil intra-byte-lane), reference all high-speed traces to a solid ground plane, and series-terminate address/command lines near the controller. The 96-ball FBGA's short ball leads help, but via transitions must be minimized - each via adds inductance that erodes DDR3-1600 timing margin.
Provide a 1.35 V VDD/VDDQ rail regulated within 1.283 V to 1.45 V, plus a VTT termination rail at VDDQ/2 (0.675 V) capable of sinking and sourcing current during bus turnaround - use a dedicated VTT LDO or termination regulator sized for peak termination current. Place bulk (100 uF) and local (0.1 uF per power ball) decoupling at each FBGA power ball. Estimated: at DDR3-1600 typical IDD currents, per-device power remains roughly 500-900 mV-rail dependent, but verify with the datasheet IDD tables for your actual utilization profile.
Do not assume ODT settings port unchanged from DDR3 (1.5 V) designs - program nominal and dynamic ODT per the DDR3L datasheet tables and re-verify read/write eye margins during bring-up. Confirm the memory controller supports the -125 speed bin (DDR3-1600, CL=11) before layout; if it tops out at DDR3-1333, consider the -107 bin parts instead. Finally, when second-sourcing to ISSI or Alliance equivalents, re-check ball map and mode-register defaults against the substitute datasheet, not the Micron document.
Información de cumplimiento
Distributor records describe the part as lead-free (PBGA-96, 'lead free' per ADatasheet listing). REACH and conflict-minerals status not stated in provided data. For automotive qualification, use the AIT:A variant.